Bottom spin valves with continuous spacer exchange (or hard) bias
First Claim
1. A method for forming a specularly reflecting bottom spin valve magnetoresistive (SVMR) sensor element with continuous spacer exchange hard bias comprising:
- providing a substrate;
forming over said substrate a seed layer;
forming over said seed layer an antiferromagnetic pinning layer;
forming over said antiferromagnetic pinning layer a ferromagnetic pinned layer;
forming over said ferromagnetic pinned layer a non-magnetic spacer layer;
forming over said non-magnetic spacer layer a ferromagnetic free layer;
forming over said ferromagnetic free layer a Ta layer;
oxidizing said Ta layer;
forming over said oxidized Ta layer a capping layer;
forming over said capping layer a lift-off resist pattern;
removing the developed areas of said resist pattern to expose a portion of the capping layer;
removing said exposed portion of the capping layer, together with the oxidized Ta layer and part of the ferromagnetic free layer beneath said exposed portion;
refilling the removed region with a ferromagnetic layer;
forming over said ferromagnetic layer a longitudinally biasing layer;
forming over said longitudinally biasing layer a conductor lead layer;
forming over said conductor lead layer and the remaining portion of the capping layer an upper substrate layer.
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Accused Products
Abstract
A method for forming a specularly reflecting bottom spin valve magnetoresistive (SVMR) sensor element with continuous spacer exchange hard bias and a specularly reflecting bottom spin valve magnetoresistive (SVMR) sensor element fabricated according to that method. To practice the method, there is provided a substrate upon which is formed a seed layer, upon which is formed an antiferromagnetic pinning layer, upon which is formed a ferromagnetic pinned layer, upon which is formed a non-magnetic spacer layer, upon which is formed a ferromagnetic free layer, upon which is formed a specularly reflecting and capping layer. The width of the sensor element is defined by a pair of conducting leads aligned upon a pair of continuous spacer exchange hard bias layers.
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Citations
37 Claims
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1. A method for forming a specularly reflecting bottom spin valve magnetoresistive (SVMR) sensor element with continuous spacer exchange hard bias comprising:
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providing a substrate;
forming over said substrate a seed layer;
forming over said seed layer an antiferromagnetic pinning layer;
forming over said antiferromagnetic pinning layer a ferromagnetic pinned layer;
forming over said ferromagnetic pinned layer a non-magnetic spacer layer;
forming over said non-magnetic spacer layer a ferromagnetic free layer;
forming over said ferromagnetic free layer a Ta layer;
oxidizing said Ta layer;
forming over said oxidized Ta layer a capping layer;
forming over said capping layer a lift-off resist pattern;
removing the developed areas of said resist pattern to expose a portion of the capping layer;
removing said exposed portion of the capping layer, together with the oxidized Ta layer and part of the ferromagnetic free layer beneath said exposed portion;
refilling the removed region with a ferromagnetic layer;
forming over said ferromagnetic layer a longitudinally biasing layer;
forming over said longitudinally biasing layer a conductor lead layer;
forming over said conductor lead layer and the remaining portion of the capping layer an upper substrate layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A bottom valve, specularly reflecting spin valve magnetoresistive (SVMR) sensor element with continuous spacer exchange hard bias comprising:
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a substrate;
a seed layer formed over said substrate;
an antiferromagnetic pinning layer formed over said seed layer;
a ferromagnetic pinned layer formed over said antiferromagnetic pinning layer;
a non-magnetic spacer layer formed over said ferromagnetic pinned layer;
a ferromagnetic free layer formed over said non-magnetic spacer layer;
a layer of TaO formed over said ferromagnetic free layer;
a capping layer formed over said TaO layer;
an etched out region that is refilled with a ferromagnetic layer;
a longitudinally biasing layer that is formed over said ferromagnetic layer;
a conductor lead layer that is formed over said longitudinally biasing layer;
an upper substrate layer that is formed over the conductor lead layer and the remaining portion of said capping layer. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37)
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Specification