Reactor chamber for an externally excited torroidal plasma source with a gas distribution plate

• US 6,468,388 B1
• Filed: 08/11/2000
• Issued: 10/22/2002
• Est. Priority Date: 08/11/2000
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Tanaka, Tsutomu, Ye, Yan, Ramaswamy, Kartik, Hanawa, Hiroji, Nguyen, Andrew, Collins, Kenneth S
• Primary Examiner(s): Mills, Gregory
• Assistant Examiner(s): Crowell, Anna Michelle
• Application Number:
  US09/636,434
• Time in Patent Office: 802 Days
• Field of Search: 156/345, 118/723.I, 118/723.R
• US Class Current: 156/345.48
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma

Abstract

A plasma chamber defining an evacuated interior environment for processing a substrate includes a substrate support, an apertured gas distribution plate in spaced facing relationship to the substrate support, and adapted to flow process gases into the chamber interior environment adjacent the substrate support, the gas distribution plate and substrate support defining a substrate processing region therebetween. A hollow conduit having respective ends opening into the substrate processing region on opposite sides of the gas distribution plate, with the interior of the conduit sharing the interior environment. The conduit being adapted to accept irradiation by an RF field of processing gases within the conduit to sustain a plasma in a path extending around the conduit interior and across the substrate processing region within the chamber interior environment.

Claims

1. A plasma chamber defining an evacuated interior environment for processing a substrate, said chamber comprising:

a substrate support;

an apertured gas distribution plate in spaced facing relationship to the substrate support, and adapted to flow process gases into the chamber interior environment adjacent the substrate support, said gas distribution plate and substrate support defining a substrate processing region therebetween;

a hollow conduit having respective ends opening into said substrate processing region on opposite sides of said gas distribution plate, with the interior of said conduit sharing the interior environment;

a side wall surrounding said processing region between said gas distribution plate and said substrate support;

said conduit being adapted to accept irradiation by an RF field of processing gases within the conduit to sustain a plasma in a reentrant path extending around the conduit interior and across the substrate processing region within said chamber interior environment, said path being bounded by said side wall.

2. The chamber of claim 1, in which said path is torroidal.

3. The chamber of claim 1, in which a plasma current circulates around said path.

4. The plasma chamber of claim 1 wherein the conduit has a diameter greater than that of the substrate processing region.

5. The plasma chamber of claim 1 wherein said respective ends of said hollow conduit have a separation distance therebetween that exceeds a diameter of said substrate support.

6. The plasma chamber of claim 1 wherein induced electric field lines of the plasma extend across the substrate plasma processing region from one of the conduit ends to the other.

7. The plasma chamber of claim 6 wherein the electric field lines are generally parallel.

8. The plasma chamber of claim 7 wherein the electric field strength is evenly distributed across the substrate plasma processing region.

9. The plasma chamber of claim 1 wherein the conduit includes an insulating gap generally midway between said respective ends to preclude the conduit from presenting a continuous conductive path between said ends.

10. The plasma chamber of claim 1 wherein said conduit has a diameter exceeding the diameter of the chamber.

11. The plasma chamber of claim 1 wherein each end of said conduit has a transverse dimension which is at least as great as that of said substrate support.

12. The plasma chamber of claim 1 further comprising an RF power applicator.

13. The plasma chamber of claim 2 further comprising an RF inductive source.

14. The plasma chamber of claim 13 wherein said inductive source is adjacent said conduit.

15. The plasma chamber of claim 1 further comprising a bias RF power source coupled to said substrate support.

16. The plasma chamber of claim 1 further comprising a gas injection inlet to said conduit.

17. The plasma chamber of claim 16 in which said gas injection inlet is adapted to flow diluent gases, and said gas distribution plate is adapted to flow primarily reactive process gases.

18. The plasma chamber of claim 1 wherein said gas distribution plate is adapted to flow different mixtures of inert and reactive process gases at different radial locations.

19. The plasma chamber of claim 1 wherein said respective ends of said hollow conduit open through said gas distribution plate.

20. The plasma chamber of claim 1 further comprising a pumping annulus in a plane below said processing region through which gases are evacuated from said chamber.

21. The plasma chamber of claim 1 wherein said reentrant path extends across a top of said gas distribution plate, down one side of said gas distribution plate, across a bottom of said gas distribution plate and up an opposite side of said gas distribution plate, whereby said gas distribution plate is compassed by said reentrant path.