Thin film semiconductor device for display and method of producing same

• US 6,468,839 B2
• Filed: 11/03/1999
• Issued: 10/22/2002
• Est. Priority Date: 11/05/1993
• Status: Expired due to Term

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Kinoshita, Yukio, Inoue, Yuko, Hayashi, Hisao
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): Rao, Shrinivas H.
• Application Number:
  US09/433,179
• Publication Number:
  US 20010014493A1
• Time in Patent Office: 1,084 Days
• Field of Search: 438/48, 438/166, 438/149, 438/308, 438/151, 438/981, 438/128, 349/43, 349/47
• US Class Current: 438/149
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/127 with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile

Abstract

An LDD structure of a thin film transistor for pixel switching is realized on a large glass substrate by low-temperature processes. A thin film semiconductor device for display comprises a display part and a peripheral driving part formed on a glass substrate (0). Pixel electrodes (9) and NchLDD-TFTs are arranged in a matrix in the display part. Thin film transistor PchTFTs and NchTFTs which constitute circuit elements are formed in the peripheral driving part. Each thin film transistor consists of a gate electrode (1), an insulating film (2) formed on the gate electrode (1), a polycrystalline semiconductor layer (32) formed on the insulating layer (2), and a high concentration impurity layer constituting a source (4) and a drain (7) formed on the polycrystalline semiconductor layer (3). Further, an NchLDD-TFT thin film transistor for switching has an LDD structure in which a low concentration impurity layer (8) is interposed between the polycrystalline semiconductor layer (3) and the high concentration impurity layer (7).

Claims

1. A method for producing a thin film semiconductor device comprising a display part and a peripheral drive circuit part integrally formed on a glass substrate, comprising the steps of:

forming gate electrodes on the glass substrate;

forming an insulating film on the gate electrodes;

forming a semiconductor thin film on the insulating film on the gate electrodes;

performing laser annealing on the semiconductor thin film to transform the semiconductor thin film into a polycrystalline semiconductor layer;

selectively forming a low concentration impurity layer on the polycrystalline semiconductor layer in the display part; and

forming a high concentration impurity layer to constitute source and drain regions on the low concentration impurity layer in the display part, thereby forming a thin film transistor for switching having an LDD structure in the display part, and forming a high concentration impurity layer to constitute source and drain regions on the polycrystalline semiconductor layer in the peripheral drive circuit part, thereby forming thin film transistors in the drive circuit part.

2. The method according to claim 1, further comprising a step of selectively performing additional laser annealing on the high concentration impurity layer in the peripheral drive circuit part to reduce a resistance of the polycrystalline semiconductor layer.

3. The method according to claim 1 including the step of providing an insulating layer over said semiconductor thin film and etching the insulating layer so as to remove portions of the insulating layer lying laterally outwardly of the gates, and forming portions of the low concentration impurity layer over portions of the insulating layer at the gate electrode at the display part, and forming portions of said high concentration impurity layer over portions of the insulating layer over the gate at the peripheral drive circuit part.

4. The method according to claim 1 including the step of providing an n channel thin film transistor and a p channel thin film transistor in the peripheral drive circuit part, and an n-channel lightly doped drain thin film transistor at the display part.