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Methods of forming thin films by atomic layer deposition

  • US 6,468,924 B2
  • Filed: 05/31/2001
  • Issued: 10/22/2002
  • Est. Priority Date: 12/06/2000
  • Status: Expired due to Term
First Claim
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1. A method for forming a thin film comprising:

  • providing a first reactant containing a halogen on a semiconductor substrate in order to chemisorb a first reactant adsorption layer combined with the halogen on the semiconductor substrate;

    providing activated hydrogen gas to the first reactant adsorption layer in order to remove the halogen from the first reactant adsorption layer; and

    then providing a second reactant to the first reactant adsorption layer in order to chemisorb the second reactant into the first reactant adsorption layer and define the thin film.

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