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Process for manufacturing integrated devices comprising microstructures and associated suspended electrical interconnections

  • US 6,469,330 B1
  • Filed: 10/20/1999
  • Issued: 10/22/2002
  • Est. Priority Date: 10/21/1998
  • Status: Expired due to Term
First Claim
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1. An integrated device, comprising:

  • a semiconductor body having first and second regions separated by an air gap;

    a conductive line extending over the air gap, the conductive line electrically connecting the first and second regions; and

    a protective structure at least partially surrounding the conductive line wherein the protective structure includes an upper protective region comprising silicon carbide.

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