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Method and device for producing undercut gate for flash memory

  • US 6,469,341 B1
  • Filed: 07/25/2000
  • Issued: 10/22/2002
  • Est. Priority Date: 05/11/1998
  • Status: Expired due to Term
First Claim
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1. A semiconductor device, said device comprising:

  • a substrate, said substrate including a layer of dielectric material overlying an active region; and

    a floating gate overlying said layer of dielectric material, said floating gate including a side wall having a slant edge, said slant edge defining a generally concave-shaped undercut edge, and wherein said side wall comprises substantially vertical edges above said slant edge.

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