Bipolar transistor

• US 6,469,367 B2
• Filed: 10/23/2001
• Issued: 10/22/2002
• Est. Priority Date: 08/19/1998
• Status: Expired due to Fees

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Kondo, Masao, Oda, Katsuya, Washio, Katsuyoshi
• Primary Examiner(s): Wilson, Allan R.
• Application Number:
  US09/983,143
• Publication Number:
  US 20020024061A1
• Time in Patent Office: 364 Days
• Field of Search: 257/197, 257/198, 257/591, 257/592
• US Class Current: 257/592
• CPC Class Codes: H01L 31/1105 the device being a bipolar phototransistor

Abstract

A bipolar transistor using a B-doped Si and Ge alloy for a base in which a Ge content in an emitter-base depletion region and in a base-collector depletion region is greater than a Ge content in a base layer. Diffusion of B from the base layer can be suppressed by making the Ge content in the emitter-base depletion region and in a base-collector depletion region on both sides of the base layer greater than the Ge content in the base layer since the diffusion coefficient of B in the SiGe layer is lowered as the Ge contents increases.

Claims

1. A bipolar transistor using a B-doped Si and Ge alloy for a base in which the maximum value of a Ge content in an emitter-base junction depletion region and a base-collector junction depletion region is greater than an average value in a base layer, wherein said Ge content increases abruptly from a vicinity of an edge of the base layer on the emitter side to the emitter, the edge of the base layer on the emitter side being in the depth of 70-80 nm.

2. A bipolar transistor according to claim 1, wherein a grade of said Ge content in a first region in which the grade of Ge content increases from a vicinity of an edge of a base layer on a collector side to the collector is greater than the grade of said Ge content in a second region disposed in the base layer and adjacent to said first region.

3. A bipolar transistor according to claim 1, wherein the maximum of a B content of said B-doped Si and Ge alloy is 1×

10²⁰ cm<sup>−

3</sup>.

4. A bipolar transistor using a B-doped Si and Ge alloy for a base in which for maximum value of a Ge content in an emitter-base junction depletion region and a base-collector junction depletion region is greater than an average value in a base layer,

wherein said Ge content increases abruptly from a vicinity of an edge of the base layer on the emitter side to the emitter in a region where B content decreases abruptly from a vicinity of an edge of the base layer on the emitter side to the emitter, the edge of the base layer on the emitter side being in the depth of 70-80 nm.

5. A bipolar transistor according to claim 4, wherein a grade of said Ge content in a first region in which the grade of Ge content increases from a vicinity of an edge of a base layer on a collector side to the collector is greater than the grade of said Ge content in a second region disposed in the base layer and adjacent to said first region.

6. A bipolar transistor according to claim 4, wherein the maximum of a B content of said B-doped Si and Ge alloy is 1×

10²⁰ cm<sup>−

3</sup>.

7. A bipolar transistor comprising:

a substrate;

a first Si layer formed on said substrate;

a second Si layer formed on said first Si substrate, said second Si layer has a concentration lower than said first Si layer;

a first SiGe film formed on said second Si layer;

a second SiGe film formed on said first SiGe film, said second SiGe film has an electric conductivity opposite to said first SiGe film;

a third SiGe film formed on said second SiGe film, said third SiGe film has an electric conductivity opposite to said second SiGe film;

a third Si layer formed on said third SiGe film, said third Si layer has a concentration higher than said second Si layer;

wherein said first and second Si layers are comprised with a collector and said second SiGe film is comprised with a base and said third Si layer is comprised with an emitter,

wherein said bipolar transistor uses a B-doped Si and Ge alloy for said base in which the maximum value of a Ge content in an emitter-base junction depletion region and a base-collector junction depletion region is greater than an average value in said base layer, and

wherein said Ge content increases abruptly from a vicinity of an edge of said base layer on the emitter side to said emitter.

8. A bipolar transistor according to claim 7, wherein said substrate is p-type Si substrate.

9. A bipolar transistor according to claim 7, wherein a grade of said Ge content in a first region in which the grade of Ge content increases from a vicinity of an edge of a base layer on a collector side to the collector is greater than the grade of said Ge content in a second region disposed in the base layer and adjacent to said first region.

10. A bipolar transistor according to claim 7, wherein the maximum of a B content of said B-doped Si and Ge alloy is 1×

10²⁰ cm<sup>−

3</sup>.