Semiconductor package and manufacturing method thereof

• US 6,469,398 B1
• Filed: 03/21/2002
• Issued: 10/22/2002
• Est. Priority Date: 03/29/2001
• Status: Expired due to Term

• Current Assignee: North Plate Semiconductor, LLC
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Hori, Tetsuji
• Primary Examiner(s): Clark, Sheila V.
• Application Number:
  US10/101,730
• Publication Number:
  US 20020140067A1
• Time in Patent Office: 215 Days
• Field of Search: 257/796, 257/706, 257/707, 257/784, 257/735, 257/736, 257/737, 257/787
• US Class Current: 257/796
• CPC Class Codes: H01L 2224/05001 Internal layers
• CPC Class Codes: H01L 2224/05008 Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body, e.g.
• CPC Class Codes: H01L 2224/05009 Bonding area integrally formed with a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05016 in side view
• CPC Class Codes: H01L 2224/05027 the internal layer extending out of an opening
• CPC Class Codes: H01L 2224/05155 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05572 the external layer extending out of an opening
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05664 Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/274 by blanket deposition of the material of the layer connector
• CPC Class Codes: H01L 2224/371 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/37147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73221 Strap and wire connectors
• CPC Class Codes: H01L 2224/73253 Bump and layer connectors
• CPC Class Codes: H01L 2224/83801 Soldering or alloying
• CPC Class Codes: H01L 2224/84801 : Soldering or alloying
• CPC Class Codes: H01L 23/3107 : the device being completely enclosed
• CPC Class Codes: H01L 23/4334 : Auxiliary members in encapsulations H01L23/49568 takes precedence
• CPC Class Codes: H01L 23/49562 : for devices being provided for in H01L29/00
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/34 : Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/37 : of an individual strap connector
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/207 : Diameter ranges

Abstract

A semiconductor package includes a semiconductor chip. The semiconductor chip includes first and second electrodes disposed on a top side, and a third electrode disposed on a bottom side. A heat spreader is bonded to the third electrode. First and second conductive leads are electrically connected to the first and second electrodes through first and second conductive bonding members, respectively. The first and second leads respectively include foot portions at their lower ends, which are juxtaposed on a first side of the heat spreader. The heat spreader and the foot portions of the first and second leads have bottom faces, which are exposed on the bottom of an insulating sealing body, and are disposed on the same plane.

Claims

1. A semiconductor package, comprising:

a semiconductor chip including first and second electrodes disposed on a top side, and a third electrode disposed on a bottom side;

a heat spreader bonded to the third electrode;

first and second conductive leads electrically connected to the first and second electrodes through first and second conductive bonding members, respectively, the first and second leads respectively including foot portions, which laterally extend at lower ends of the first and second leads and are juxtaposed on a first side of the heat spreader; and

an insulating sealing body arranged to embed and seal therein the semiconductor chip, the heat spreader, and portions of the first and second leads, which extend from the first and second bonding members to at least part of the foot portions, the heat spreader and the foot portions of the first and second leads having bottom faces, which are exposed on a bottom of the sealing body, and are disposed on substantially the same plane.

2. A package according to claim 1, wherein the heat spreader is conductive, and is electrically connected to the third electrode through a third conductive bonding member, the heat spreader functioning as a third lead.

3. A package according to claim 1, wherein the first, second, and third electrodes are electrically connected to source electrode, gate electrode, and drain electrode, respectively.

4. A package according to claim 1, wherein foot portions of all leads including the first and second leads, which are connected to the top side of the semiconductor chip, are juxtaposed on the first side of the heat spreader.

5. A package according to claim 1, wherein the first and second leads are sole terminals configured to receive first and second voltages, respectively, applied to the semiconductor chip.

6. A package according to claim 1, wherein each of the first and second leads is formed of a conductive strip.

7. A package according to claim 6, wherein the heat spreader has a thickness t1 and the conductive strip has a thickness t2 to satisfy a thickness ratio condition of 1<

t1/t2≦

3.

8. A package according to claim 1, wherein the sealing body is formed to embed and seal therein substantially entirely the foot portions of the first and second leads, while allowing a toe of each of the foot portions to be exposed on a side surface of the sealing body.

9. A package according to claim 8, wherein the toe of each of the foot portions projects from the side surface of the sealing body by a length of from 0 to 0.3 mm.

10. A package according to claim 1, wherein each of the first and second leads comprises a proximal portion facing the top side of the semiconductor chip, a leg portion bending from the proximal portion and extending along a flank of the semiconductor chip and the heat spreader, and the foot portion bending from the leg portion and extending away from the heat spreader.

11. A package according to claim 10, wherein the sealing body is formed to embed and seal therein the semiconductor chip, the heat spreader, and all the proximal portions and the leg portions of the first and second leads, and at least part of the foot portions of the first and second leads.

12. A package according to claim 10, wherein the leg portion forms an angle of 90°

±

10°

relative to the plane.

13. A package according to claim 1, wherein each of the first and second bonding members comprises a bonding member having a sectional area of from 0.007 to 0.07 mm².

14. A package according to claim 1, wherein at least one of the first and second bonding members comprises a bonding member having a sectional area of 0.2 mm² or more.

15. A package according to claim 1, wherein the sealing body consists essentially of a material selected from the group consisting of thermosetting resins including epoxy resin.

16. A package according to claim 1, wherein each of the first and second bonding members consists essentially of a material selected from the group consisting of Au and solder.

17. A package according to claim 16, further comprising barrier metal layers respectively interposed between the first and second electrodes and the first and second bonding members, wherein the first and second bonding members consists essentially of solder.

18. A package according to claim 1, wherein the heat spreader consists essentially of a material different from that of the first and second leads.

19. A method of manufacturing a semiconductor package comprising:

bonding a heat spreader to a third electrode of a semiconductor chip, which includes first and second electrodes disposed on a top side, and the third electrode disposed on a bottom side

electrically connecting first and second conductive leads to the first and second electrodes by first and second conductive bonding members, respectively, the first and second leads respectively including foot portions, which laterally extend at lower ends of the first and second leads and are juxtaposed on a first side of the heat spreader; and

forming an insulating sealing body to embed and seal therein the semiconductor chip, the heat spreader, and portions of the first and second leads, which extend from the first and second bonding members to at least part of the foot portions, the heat spreader and the foot portions of the first and second leads having bottom faces, which are exposed on a bottom of the sealing body, and are disposed on substantially the same plane.

20. A method according to claim 19, further comprising placing materials of the first and second bonding members on the first and second electrodes, before electrically connecting the first and second leads, and before bonding the heat spreader.

21. A method according to claim 19, wherein electrically connecting the first and second leads is performed by a facedown bonding operation.

22. A method according to claim 21, further comprising placing materials of the first and second bonding members on the first and second leads, before electrically connecting the first and second leads.

23. A method according to claim 19, wherein the heat spreader is conductive, and is electrically connected to the third electrode through a third conductive bonding member, the heat spreader functioning as a third lead.

24. A method according to claim 19, wherein the first and second leads are part of a lead frame, and the method further comprises separating the first and second leads from the lead frame, after connecting the first and second leads to the first and second electrodes, respectively.

25. A semiconductor package, comprising:

a semiconductor chip including first and second electrodes disposed on a top side, and a third electrode disposed on a bottom side;

a conductive heat spreader bonded to the third electrode, the heat spreader being electrically connected to the third electrode through a third conductive bonding member, and functioning as a third lead;

first and second conductive leads electrically connected to the first and second electrodes through first and second conductive bonding members, respectively, wherein each of the first and second leads is formed of a conductive strip, and the heat spreader has a thickness t1 and the conductive strip has a thickness t2 to satisfy a thickness ratio condition of 1<

t1/t2≦

3, wherein each of the first and second leads comprises a proximal portion facing the top side of the semiconductor chip, a leg portion bending from the proximal portion and extending along a flank of the semiconductor chip and the heat spreader, and a foot portion bending from the leg portion and extending away from the heat spreader, and wherein the foot portions of the first and second leads are juxtaposed on a first side of the heat spreader; and

an insulating sealing body arranged to embed and seal therein the semiconductor chip, the heat spreader, and all the proximal portions and the leg portions of the first and second leads, and at least part of the foot portions of the first and second leads, wherein the sealing body consists essentially of a material selected from the group consisting of thermosetting resins including epoxy resin, and wherein the heat spreader and the foot portions of the first and second leads have bottom faces, which are exposed on a bottom of the sealing body, and are disposed on substantially the same plane.

26. A package according to claim 25, wherein the first and second leads a r e sole terminals configured to receive first and second voltages, respectively, applied to the semiconductor chip.

27. A package according to claim 26, wherein the first, second, and third electrodes are electrically connected to source electrode, gate electrode, and drain electrode, respectively.

28. A package according to claim 25, wherein the sealing body is formed to embed and seal therein substantially entirely the foot portions of the first and second leads, while allowing a toe of each of the foot portions to be exposed on a side surface of the sealing body.