HEMT-HBT doherty microwave amplifier
First Claim
Patent Images
1. A microwave power amplifier comprising:
- a carrier amplifier formed from one of either an HEMT or an HBT having a first input an first output;
a peak amplifier formed the other of an HEMT or an HBT having a second input and a second output; and
a coupler having first and second input terminals and first and second output terminals, said first and second output terminals coupled to said first and second inputs, said first input terminal defining a RF input port and said second input terminal coupled to an input termination impedance.
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Abstract
A microwave amplifier and more particularly to a microwave amplifier configured as a Doherty amplifier. The amplifier includes a carrier amplifier, a peak amplifier, a Lange coupler at the input of the amplifiers and quarter wave amplifier at the output of the amplifiers. In order to further increase the efficiency, the Doherty amplifier is formed from HEMT/HBT technology to take advantage of the low-noise performance of HEMTs and the high-linearity of HBTs to form a relatively efficient amplifier that functions as a low-noise amplifier at low power levels and automatically switches to high-power amplification for relatively high-impact RF power levels.
143 Citations
10 Claims
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1. A microwave power amplifier comprising:
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a carrier amplifier formed from one of either an HEMT or an HBT having a first input an first output;
a peak amplifier formed the other of an HEMT or an HBT having a second input and a second output; and
a coupler having first and second input terminals and first and second output terminals, said first and second output terminals coupled to said first and second inputs, said first input terminal defining a RF input port and said second input terminal coupled to an input termination impedance. - View Dependent Claims (2, 3, 4, 5)
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6. A microwave power amplifier comprising:
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a carrier amplifier formed from one of either an HEMT or an HBT having a first input an first output;
a peak amplifier formed the other of an HEMT or an HBT having a second input and a second output;
a coupler having first and second input terminals and first and second output terminals, said first and second output terminals coupled to said first and second inputs, said first input terminal defining a RF input port and said second input terminal coupled to an input termination impedance; and
means for electronically tuning one or the other of said carrier amplifier and said HBT amplifier. - View Dependent Claims (7, 8, 9, 10)
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Specification
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Current AssigneeNorthrop Grumman Systems Corporation (Northrop Grumman Corporation)
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Original AssigneeTRW Limited (Zeppelin - Stiftung der Stadt Friedrichshafen)
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InventorsKobayashi, Kevin W.
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Primary Examiner(s)NGUYEN, PATRICIA T
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Application NumberUS09/878,106Time in Patent Office501 DaysField of Search330/53, 330/124.R, 330/286, 330/295US Class Current330/295CPC Class CodesH03F 1/0288 using a main and one or sev...H03F 1/306 in junction-FET amplifiers ...H03F 2200/192 A hybrid coupler being used...H03F 2200/294 the amplifier being a low n...H03F 2200/372 Noise reduction and elimina...H03F 3/1935 with junction-FET devicesH03F 3/60 Amplifiers in which couplin...
