Dynamical quantity sensor

• US 6,470,747 B1
• Filed: 07/17/2000
• Issued: 10/29/2002
• Est. Priority Date: 10/13/1992
• Status: Expired due to Term

• Current Assignee: DENSO Corporation
• Original Assignee: DENSO Corporation
• Inventors: Mizukoshi, Masahito
• Primary Examiner(s): Kwok, Helen
• Application Number:
  US09/617,801
• Time in Patent Office: 834 Days
• Field of Search: 735/040.2, 735/040.4, 735/041.2, 735/10, 735/140.2, 735/141.8, 735/143.2
• US Class Current: 73/504.02
• CPC Class Codes: G01C 19/5719 using planar vibrating masses driven in a translation vibration along an axis

Abstract

This invention provides a dynamical quantity sensor having a novel structure, wherein first beams 3, 4, 5, 6 are extended from side walls of a recess 2 of a substrate 1, and an intermediate support member 7 is disposed on the first beams 3, 4, 5, 6. Second beams 8, 9, 10, 11 extending in a direction crossing substantially perpendicularly the first beams 3, 4, 5, 6 are disposed on the intermediate support member 7, and a weight 12 is disposed on the second beams 8, 9, 10, 11. Opposing electrodes 17 and 19 and opposing electrodes 18 and 20 are used as electrodes for excitation, and opposing electrodes 13 and 15 and opposing electrodes 14 and 16 are used as electrodes for detecting an angular velocity. The movement of the weight 12 resulting from the application of the angular velocity is detected.

Claims

1. A dynamic quantity sensor comprising:

fist electrode formed by selectively etching a semiconductor substrate so as to penetrate in the direction of thickness of the substrate, and being movable in a direction parallel to a surface of the semiconductor substrate in accordance with the action of a dynamical quantity;

a second electrode formed by selectively etching the semiconductor substrate so as to penetrate in the direction of thickness of the substrate, and being movable in a direction parallel to a surface of the semiconductor substrate and perpendicular to the first electrode in accordance with the action of the dynamical quantity; and

a third electrode formed at a position opposite to the first and second electrodes by selectively etching the semiconductor substrate so as to penetrate in the direction of thickness of the substrate, and detecting the movement of at least one of the first and second electrodes.

2. A dynamical quantity sensor as claimed in claim 1, further comprising a first substrate formed under the semiconductor substrate.

3. A dynamical quantity sensor as claimed in claim 2, wherein the first substrate comprises an area eliminated by an etching.

4. A dynamical quantity sensor comprising:

a fixed portion consisting of a semiconductor layers;

a first electrode formed on the fixed portion;

a first movable plate supported at the fixed portion by a plurality of beam portions elongated from the fixed portion, and being movable in a direction horizontal to a surface of the fixed portion; and

a second electrode formed on a position opposite to the first electrode in the first movable plate;

wherein the first movable plate comprises;

a plurality of coupling points to couple the plurality of beam portions elongated from the fixed portion;

a first weight disposed in an inner area surrounded by the plurality of coupling points; and

a second weight fixed to the first weight and an outer area of the plurality of coupling points; and

wherein the change of the capacitance between the first and second electrodes is detected so that a dynamical quantity acting on the first movable plate is detected.

5. A dynamical quantity sensor as claimed in claim 4, wherein the first electrode is formed on the second weight.

6. A dynamical quantity sensor as claimed in claim 4, wherein the first movable plate has a frame-like shape.

7. A dynamical quantity sensor as claimed in claim 4, wherein the second weight is fixed by two coupling points in a cantilever-type beam from the first weight.

8. A dynamical quantity sensor as claimed in claim 4, further comprising:

a third electrode formed at a position different from the second electrode in the first movable plate;

a second movable plate supported at the first movable plate by a plurality of beam portions elongated from the first movable plate and being movable in a direction horizontal to the surface of the fixed portion and perpendicular to the first movable plate; and

a fourth electrode formed on a position opposite to the third electrode in the second movable plate.

9. A dynamical quantity sensor as claimed in claim 8, wherein an AC voltage is supplied between the third and fourth electrodes, and the second movable plate is excited by an electrostatic force.

10. A dynamical quantity sensor as claimed in claim 8, wherein a dynamical quantity acting on the second movable plate is detected by detecting the change of the capacitance between the third and fourth electrodes.

11. A dynamical quantity sensor as claimed in claim 8, wherein the second movable plate comprises:

a plurality of coupling points coupled to a plurality of beam portions elongated from the first movable plate;

a third weight disposed within the plurality of coupling points; and

a fourth weight fixed in a cantilever-type beam from the third weight, and disposed outside of the plurality of coupling points, wherein the fourth electrode is formed on the fourth weight.

12. A dynamical quantity sensor as claimed in claim 11, wherein the fourth weight is fixed by two coupling points in the cantilever-type beam from the third weight.

13. A dynamical quantity sensor comprising:

a semiconductor substrate;

a first electrode being movable in a direction parallel to a surface of the substrate in accordance with the action of a dynamical quantity;

a second electrode being movable in the direction parallel to the surface of the substrate and perpendicular to the first electrode in accordance with the action of the dynamical quantity; and

a third electrode formed on a position opposite to the first and second electrodes, and detecting the movement of at least one of the first and second electrodes;

wherein the first, second and third electrodes are formed by selectively etching the substrate so as to penetrate in a direction of thickness of the substrate.

14. A dynamical quantity sensor as claimed in claim 13, further comprising a first substrate formed under the semiconductor substrate.

15. A dynamical quantity sensor as claimed in claim 14, wherein the first substrate comprises an area eliminated by an etching.

16. A dynamical quantity sensor comprising:

a fixed portion consisting of a semiconductor layer;

a first electrode formed on the fixed portion;

a first movable plate supported at the fixed portion by a plurality of beam portions elongated from the fixed portion, and being movable in a direction horizontal to a surface of the fixed portion; and

a second electrode formed on a position opposite to the first electrode in the first movable plate;

wherein the change of capacitance between the first and second electrodes is detected so that a dynamical quantity acting on the first movable plate is detected.

17. A dynamical quantity sensor claimed in claim 16, wherein the first electrode is formed on one of two weights.

18. A dynamical quantity sensor as claimed in claim 16, wherein the first movable plate has a frame-like shape.

19. A dynamical quantity sensor as claimed in claim 17, wherein the weight onto which the first electrode is formed is fixed by two coupling points in a cantilever-type beam from the other of the said two weights.

20. A dynamical quantity sensor as claimed in claim 16, further comprising:

a third electrode formed at a position different from the second electrode in the first movable plate;

a second movable plate supported at the first movable plate by a plurality of beam portions elongated from the first movable plate, and being movable in a direction horizontal to the surface of the fixed portion and perpendicular to the first movable plate; and

a fourth electrode formed on a position opposite to the third electrode in the second movable plate.

21. A dynamical quantity sensor as claimed in claim 20, wherein an AC voltage is supplied between the third and fourth electrodes, and the second movable plate is excited by an electrostatic force.

22. A dynamical quantity sensor as claimed in claim 20, wherein a dynamical quantity acting on the second movable plate is detected by detecting the change of capacitance between the third and fourth electrodes.

23. A dynamical quantity sensor as claimed in claim 20, wherein the second movable plate comprises:

a plurality of coupling points coupled to a plurality of beam portions elongated from the first movable plate;

a third weight disposed within the plurality of coupling points; and

a fourth weight fixed in a cantilever-type beam from the third weight, and disposed outside of the plurality of coupling points,

wherein the fourth electrode is formed on the fourth weight.

24. A dynamical quantity sensor as claimed in claim 23, wherein the fourth weight is fixed by two coupling points in the cantilever-type beam from the third weight.

25. A dynamical quantity sensor comprising:

a semiconductor substrate;

a first electrode being movable in a direction parallel to a surface of the substrate in accordance with the action of a dynamical quantity; and

a second electrode formed on a position opposite to the first electrode, and detecting the movement of the first electrode;

when the first and second electrodes are formed by selectively etching the semiconductor substrate so as to penetrate in the direction of thickness of the substrate.

26. A dynamical quantity sensor as claimed in claim 25, further comprising a first substrate formed under the semiconductor substrate.

27. A dynamical quantity sensor as claimed in claim 26, wherein the first substrate comprises an area eliminated by an etching.

28. A dynamic quantity sensor comprising:

a semiconductor substrate;

a first electrode being movable in a direction parallel to a surface of the semiconductor substrate in accordance with the action of a dynamical quantity; and

a second electrode being movable in a direction parallel to a surface of the semiconductor substrate and perpendicular to the first electrode in accordance with the action of the dynamical quantity; and

a third electrode formed at a position opposite to the first and second electrodes, and detecting the movement of at least one of the first and second electrodes.

29. A dynamic quantity sensor comprising:

a semiconductor substrate;

a first electrode being movable in a direction parallel to a surface of the semiconductor substrate in accordance with the action of a dynamical quantity; and

a second electrode formed at a position opposite to the first, and detecting the movement of the first electrode.

30. A dynamical quantity sensor comprising:

a first electrode formed by selectively etching a semiconductor substrate so as to penetrate in a direction of thickness of the substrate, and being movable in the direction parallel to a surface of the semiconductor substrate in accordance with the action of a dynamical quantity; and

a second electrode formed at a position opposite to the first electrode by selectively etching the semiconductor substrate so as to penetrate in the direction of thickness of the substrate; and

a surrounding portion surrounding the first electrode and second electrode, wherein a part of the surrounding portion is more thick than the first electrode and second electrode.