Sealed capacitive pressure sensors

• US 6,470,754 B1
• Filed: 08/17/1999
• Issued: 10/29/2002
• Est. Priority Date: 08/19/1998
• Status: Expired due to Term

• Current Assignee: Wisconsin Alumni Research Foundation (University of Wisconsin System)
• Original Assignee: Wisconsin Alumni Research Foundation (University of Wisconsin System)
• Inventors: Gianchandani, Yogesh B.
• Primary Examiner(s): NOORI, MAX H
• Application Number:
  US09/375,969
• Time in Patent Office: 1,169 Days
• Field of Search: 737/24, 737/18, 361/283.4, 361/283.1, 361/291, 361/297, 361/283, 381/179
• US Class Current: 73/718
• CPC Class Codes: G01L 1/148 using semiconductive material, e.g. silicon
• CPC Class Codes: G01L 9/0073 using a semiconductive diaphragm
• CPC Class Codes: Y10T 29/42 Piezoelectric device making
• CPC Class Codes: Y10T 29/49002 Electrical device making

Abstract

A micromachined pressure sensor is formed with a minimum number of masking and processing steps. The structure measures changes in pressure by deflection of structures having capacitive plates external to a sealed cavity so that electrical leads can be readily connected to the plates formed on the structures. The pressure sensor includes a substrate, a base secured to the substrate and a diaphragm secured to the base to define a sealed cavity. A skirt may extend outwardly from the base above the substrate to form one of the plates of the capacitor with another plate formed on the base. Changes in ambient pressure deflect the skirt toward or away from the electrode on the substrate, changing the effective capacitance between the electrodes. Electrical connections may be made to the electrode on the skirt and the electrode on the substrate utilizing electrical connectors which are external to the base and thus external to the sealed cavity.

Claims

1. A micromachined pressure sensor comprising:

(a) a microstructure substrate;

(b) a microstructure base which is closed, secured and sealed to the substrateat a lower end of the base;

(c) a microstructure diaphragm secured and sealed to the base at an upper end of the base to define a cavity with the base and a surface of the substrate that is sealed between the base, substrate and diaphragm;

(d) a skirt extending outwardly from the base and the cavity above the substrate with at least one of the diaphragm or the base deforming and deflecting with changes between ambient pressure and pressure within the sealed cavity to change a volume of the sealed cavity and to deflect the skirt; and

(e) adjacent electrodes, one of the electrodes formed to deflect with the skirt to change the effective capacitance between the electrodes in a manner which is related to changes in pressure, wherein at least a portion of the electrodes are formed external to the sealed cavity such that electrical leads adapted to be connected to the electrodes external to the sealed cavity.

2. The micromachined pressure sensor of claim 1 wherein the diaphragm and skirt are integrally formed together.

3. The micromachined pressure sensor of claim 1 wherein the base is formed as a hollow cylinder and the diaphragm and skirt are formed integrally together as a flat circular plate which is secured to a top of the base.

4. The micromachined pressure sensor of claim 3 wherein the integrally formed diaphragm and skirt are integrally formed with the base.

5. The micromachined pressure sensor of claim 1 wherein the electrode that deflects with the skirt is defined in the skirt and the other electrode is a plate formed on the substrate under the skirt.

6. The micromachined pressure sensor of claim 5 wherein the electrode formed in the skirt is formed of heavily doped and electrically conductive silicon.

7. The micromachined pressure sensor of claim 6 wherein the other electrode plate of the capacitor is deposited as a metal film on the substrate under the skirt.

8. The micromachined pressure sensor of claim 1 wherein the electrodes of the capacitor are formed underneath the skirt and are coupled to each other through the skirt so that deflections of the skirt change the relative capacitance between the two separated plates.

9. The micromachined pressure sensor of claim 1 wherein the skirt is formed to extend from the base at positions intermediate a top and bottom of the base.

10. The micromachined pressure sensor of claim 1 wherein the base, diaphragm and skirt are formed of silicon.

11. The micromachined pressure sensor of claim 1 including an electrical connection extending from the substrate to the electrode formed to deflect with the skirt at positions exterior to the base.

40. The micromachined pressure sensor of claim 3 wherein the base, diaphragm and skirt are formed of silicon.

12. A micromachined pressure sensor comprising:

(a) a microstructure substrate;

b) a microstructure base formed as a hollow cylinder which is closed secured and sealed to the substrate at a lower end of the base;

(c) a microstructure diaphragm secured and sealed to the base at an upper end of the base above the substrate to define a cavity with the base and a surface of the substrate that is sealed between the base, substrate and diaphragm;

(d) a skirt extending outwardly from the base and the cavity above the substrate with at least one of the diaphragm or the base deforming and deflecting with changes between ambient pressure and pressure within the sealed cavity to change a volume of the sealed cavity and to deflect the skirt; and

(e) a first electrode formed on the skirt to deflect with the skirt and an adjacent second electrode on the substrate such that deflection of the skirt with changes in pressure changes the effective capacitance between the electrodes, wherein at least a portion of the electrodes are formed external to the sealed cavity such that electrical leads adapted to be connected to the electrodes external to the sealed cavity.

13. The micromachined pressure sensor of claim 12 wherein the diaphragm and skirt are integrally formed together.

14. The micromachined pressure sensor of claim 12 wherein the diaphragm and skirt are formed integrally together as a flat circular plate which is secured to a top of the base.

15. The micromachined pressure sensor of claim 14 wherein the integrally formed diaphragm and skirt are integrally formed with the base.

16. The micromachined pressure sensor of claim 12 wherein the first electrode is formed in the skirt of heavily doped and electrically conductive silicon.

17. The micromachined pressure sensor of claim 16 wherein the second electrode of the capacitor is deposited as a metal film on the substrate under the skirt.

18. The micromachined pressure sensor of claim 12 wherein the skirt is formed to extend outwardly from the base at positions intermediate a top and bottom of the base.

19. The micromachined pressure sensor of claim 12 wherein the base, diaphragm and skirt are formed of silicon.

20. The micromachined pressure sensor of claim 12 including an electrical connection extending from the substrate to the first electrode at positions exterior to the base.

21. A micromachined pressure sensor comprising:

(a) a microstructure substrate;

(b) a microstructure base which is closed, secured and sealed to the substrate at a lower end of the base;

(c) a microstructure diaphragm secured and sealed to the base at an upper end of the base to define a cavity with the base and a surface of the substrate that is sealed between the base, substrate and diaphragm, at least one of the diaphragm or base deforming and deflecting with changes between ambient pressure and pressure within the sealed cavity to change a volume of the sealed cavity;

(d) a first electrode formed on at least one of the diaphragm or the base outside the cavity to deflect therewith, and a second electrode mounted adjacent thereto to form a capacitor with the first electrode such that the effective capacitance between the electrodes changes as the first electrode is deflected in a manner which is related to changes in pressure, wherein at least a portion of the second electrode is formed external to the sealed cavity such that electrical leads adapted to be connected to the electrodes external to the sealed cavity.

22. The micromachined pressure sensor of claim 21 wherein the base is formed as a hollow cylinder and the diaphragm is secured to the top of the base, and wherein the second electrode is formed as an exterior outer cylindrical structure having an inner surface adjacent to the outer surface of the cylindrical base such that the capacitance between the adjacent surfaces of the inner cylindrical base and the outer cylindrical structure of the second electrode changes with changes in ambient pressure.

23. The micromachined pressure sensor of claim 21 wherein the base is a first base comprising a hollow structure secured to the substrate and sealed with the diaphragm, and wherein the second electrode comprises a second hollow base structure secured to the substrate and closed with a diaphragm and mounted adjacent to the first base with closely spaced walls that define the first and second electrodes, such that changes in ambient pressure deform and deflect the walls of the first and second bases such that the effective capacitance between electrodes formed on the walls of the bases is related to changes in pressure.

24. The micromachined pressure sensor of claim 21 including a skirt extending from the base over the second electrode to deflect with deformations and deflections of walls of the base, the first electrode formed on the skirt to deflect therewith to change the effective capacitance between the first and second electrodes.

25. The micromachined pressure sensor of claim 24 wherein the base includes a base structure secured to the substrate and closed by a diaphragm to define a sealed cavity with the skirt extending as a bridge structure connected thereto to deform with changes in the ambient pressure within the sealed cavity.

26. The micromachined pressure sensor of claim 21 wherein the second electrode is formed as a skirt extending outwardly from the base above the substrate with the first electrode formed to deflect with the skirt to change the effective capacitance between the first and second electrodes in a manner which is related to changes in pressure.

27. The micromachined pressure sensor of claim 26 wherein the diaphragm and skirt are integrally formed together.

28. The micromachined pressure sensor of claim 26 wherein the base is formed as a hollow cylinder and the diaphragm and skirt are formed integrally together as a flat circular plate which is secured to a top of the base and wherein the integrally formed diaphragm and skirt are integrally formed with the base.

29. The micromachined pressure of claim 28 wherein the first electrode is formed in the skirt of heavily doped and electrically conductive silicon.

30. The micromachined pressure sensor of claim 29 wherein the second electrode of the capacitor is a plate deposited as a metal film on the substrate under the skirt.

31. The micromachined pressure sensor of claim 26 wherein the skirt is formed to extend from the base at positions intermediate a top and bottom of the base.

32. The micromachined pressure sensor of claim 21 wherein the base and diaphragm are formed of silicon.

33. A micromachined pressure sensor comprising:

(a) a microstructure substrate;

(b) a microstructure base formed as a hollow cylinder which is closed, secured and sealed to the substrate at a lower end of the base;

(c) a microstructure diaphragm secured and sealed to the base at an upper end of the base above the substrate to define a cavity with the base and a surface of the substrate between the base, substrate and diaphragm;

(d) a skirt extending outwardly from the base above the substrate with at least the diaphragm deforming and deflecting with changes in pressure across the diaphragm to change a volume of the sealed cavity and to deflect the skirt; and

(e) a first electrode formed on the skirt to deflect with the skirt and an adjacent second electrode on the substrate such that deflection of the skirt with changes in pressure changes the effective capacitance between the electrodes, wherein at least a portion of the electrodes are formed external to the sealed cavity such that electrical leads adapted to be connected to the electrodes external to the sealed cavity.

34. The micromachined pressure sensor of claim 33 wherein the diaphragm and skirt are integrally formed together.

35. The micromachined pressure sensor of claim 33 wherein the diaphragm and skirt are formed integrally together as a flat circular plate which is secured to a top of the base.

36. The micromachined pressure sensor of claim 35 wherein the integrally formed diaphragm and skirt are integrally formed with the base.

37. The micromachined pressure sensor of claim 33 wherein the first electrode is formed in the skirt of heavily doped and electrically conductive silicon.

38. The micromachined pressure sensor of claim 37 wherein the second electrode of the capacitor is deposited as a metal film on the substrate under the skirt.

39. The micromachined pressure sensor of claim 33 wherein the skirt is formed to extend outwardly from the base at positions intermediate a top and bottom of the base.