Information storage apparatus and information processing apparatus using the same

• US 6,471,130 B2
• Filed: 01/26/2001
• Issued: 10/29/2002
• Est. Priority Date: 02/03/1995
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Iwasaki, Hiroshi
• Primary Examiner(s): Lee, Michael G.
• Assistant Examiner(s): FRANKLIN, JAMARA ALZAIDA
• Application Number:
  US09/769,314
• Publication Number:
  US 20010005291A1
• Time in Patent Office: 641 Days
• Field of Search: 235/487, 235/492, 710/13, 710/17, 710/18
• US Class Current: 235/492
• CPC Class Codes: G11C 7/24 Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells
• CPC Class Codes: G11C 8/20 Address safety or protection circuits, i.e. arrangements for preventing unauthorized or accidental access

Abstract

In a small and thin memory module for sharing data among electronic devices such as information processing apparatuses, a write prohibit state can be visually recognized. A conductive seal is attached to a predetermined position on a support member, thereby setting the memory module in the write prohibit state. The conductive seal visually indicates the write prohibit state. When the memory module is mounted in a connector section of a card-shaped holder, connector pins are electrically connected to each other via the conductive seal. Thus, a write prohibit mechanism is realized at low cost.

Claims

1. An information storage card comprising:

a support card having a first recess on a first surface thereof and a second recess on the first surface thereof, the second recess being adapted to receive an adhesive seal; and

a nonvolatile semiconductor memory module at least partially in the first recess, the nonvolatile semiconductor memory module having an exterior connection terminal,

wherein, if the second recess receives the adhesive seal, then writing information to the nonvolatile semiconductor memory module is prohibited, and

wherein the second recess is offset from a center line along a lengthwise dimension of the support card.

2. The information storage card according to claim 1, wherein the second recess has a circular shape.

3. The information storage card according to claim 2, wherein the second recess has a diameter of approximately 10 mm.

4. The information storage card according to claim 3, wherein the nonvolatile semiconductor memory module comprises at least one NAND flash EEPROM chip.

5. The information storage card according to claim 1, wherein a lower surface of the second recess comprises a non-conductive material.

6. The information storage card according to claim 5, wherein the support card is made of the non-conductive material.

7. The information storage card according to any one of claims 1-5, wherein the support card further comprises a third recess having a rectangular shape on the first surface, the third recess being adapted to receive a label, and the second recess being between the first recess and the third recess.

8. An information storage card having a first side and a second side, the information storage card comprising:

a nonvolatile semiconductor memory module having a flat connection terminal exposed for connection at the first side; and

a first designating area on the first side, the first designating area being adapted to receive an adhesive seal and being visibly distinguishable from a remaining portion of the first side,

wherein, if the first designating area receives the adhesive seal, then writing information to the nonvolatile semiconductor memory module is prohibited, and

wherein the first designating area is offset from a center line along a lengthwise dimension of the information storage card.

9. The information storage card according to claim 8, wherein the first designating area has a circular shape.

10. The information storage card according to claim 9, wherein the first designating area has a diameter of approximately 10 mm.

11. The information storage card according to claim 10, wherein the nonvolatile semiconductor memory module comprises at least one NAND flash EEPROM chip.

12. The information storage card according to claim 8, wherein the first designating area comprises a non-conductive material.