Method for forming a radio frequency responsive target and apparatus for verifying the authenticity of same

• US 6,471,878 B1
• Filed: 06/09/1999
• Issued: 10/29/2002
• Est. Priority Date: 08/30/1994
• Status: Expired due to Fees

• Current Assignee: Gordian Holding Corporation
• Original Assignee: Gordian Holding Corporation
• Inventors: Greene, Morton, Hurley, G. William
• Primary Examiner(s): Zimmerman, Brian
• Assistant Examiner(s): Dalencourt, Yves
• Application Number:
  US09/328,651
• Time in Patent Office: 1,238 Days
• Field of Search: 340/5.8, 216/62, 216/66, 216/67, 216/41, 216/47, 216/48, 216/13, 216/75, 216/100, 438/695, 438/705
• US Class Current: 216/13
• CPC Class Codes: G01S 13/753 using frequency selective elements, e.g. resonator
• CPC Class Codes: G01S 13/767 Responders; Transponders teaching or practice apparatus for gun-aiming or gun-laying using reflecting targets or active targets F41G3/26
• CPC Class Codes: G06F 21/35 communicating wirelessly
• CPC Class Codes: G08B 13/2445 Tag integrated into item to be protected, e.g. source tagging

Abstract

A method for forming a radio frequency responsive target formed of a pattern of thin dipoles, each of which has a position and angular orientation within the pattern, which produce a composite analog radio frequency signal in response to an interrogating signal. A first metallic film layer is deposited on top of a non-conductive substrate, an etchant resistant pattern correspondent to the thin dipole pattern is deposited on top of the first metallic film layer, and a second metallic layer occupying the first metallic layer in at least one area without etchant is applied on top of the first metallic film layer. The etchant resistant pattern is removed to expose portions of the first metallic film layer, and the second metallic layer and the exposed portions of the first metallic film layer are etched simultaneously.

Claims

1. A method for forming a radio frequency responsive target, comprising the steps of:

(A) depositing a first metallic film layer on a non-conductive substrate;

(B) generating a pattern of thin dipoles, each of said thin dipoles having a position and m angular orientation within said pattern of thin dipoles;

(C) depositing an etchant resistant pattern on top of said first metallic film layer, said etchant resistant pattern corresponding to a photographic image of said pattern of thin dipoles, said etchant resistant pattern having a thickness;

(D) after step (C), applying a second metallic layer on top of said first metallic film layer, said second metallic layer occupying areas on said first metallic film layer where said etchant resistant pattern is absent, said second metallic layer having a thickness equal to said thickness of said etchant resistant pattern;

(E) after step (D), removing said etchant resistant pattern in order to expose portions of said first metallic film layer, and

(F) after step (E), simultaneously etching said second metallic layer and said portions of said first metallic film layer until said portions of said first metallic film layer have been removed from said non-conductive substrate;

wherein said target is formed of said pat of thin dipoles, and wherein said thin dipoles produce a composite analog radio frequency signal in response to an interrogating signal.

2. The method of claim 1, wherein said photographic image is a photographic negative image of said pattern of thin dipoles.

3. The method of claim 1, wherein said non-conductive substrate is formed of a plastic material.

4. The method of claim 1, wherein said non-conductive substrate is formed of paper.

5. The method of claim 1, wherein said non-conductive substrate is formed of a cloth material.

6. The method of claim 1, wherein said non-conductive substrate is formed of a rubber material.

7. The method of claim 1, wherein said non-conductive substrate is formed of a leather material.

8. The method of claim 1, wherein said pattern of thin dipoles is randomly generated in step (B).

9. The method of claim 1, wherein said second metallic layer is applied on top of said first metallic film layer in step (D) by passing said substrate through an electroplating bath.

10. The method of claim 1, wherein said second metallic layer is vapor deposited on top of said first metallic film layer in step (D).

11. The method of claim 1, wherein said second metallic layer is applied on top of said first metallic film layer in step (D) by sputtering.

12. The method of claim 1, wherein said thickness of said etchant resistant pattern corresponds to a desired thickness of said thin dipoles on said non-conductive substrate.

13. The method of claim 2, wherein said first metallic film layer has a thickness of from 10 to 1000 angstroms.

14. The method of claim 3, wherein said desired thickness of said thin dipoles is from 100 angstroms to 2 millimeters.

15. The method of claim 4, wherein each of said thin,dipoles has a length of about 0.5 millimeters, and said thin dipoles have a density on said non-conductive substrate of from 2 to 5 dipoles per square cm of surface area on said non-conductive substrate.