Deposition of organosilsesquioxane films

• US 6,472,076 B1
• Filed: 10/18/1999
• Issued: 10/29/2002
• Est. Priority Date: 10/18/1999
• Status: Expired due to Fees

• Current Assignee: Honeywell International Inc.
• Original Assignee: Honeywell International Inc.
• Inventors: Hacker, Nigel P.
• Primary Examiner(s): Copenheaver, Blaine
• Assistant Examiner(s): ROCHE, LEANNA M
• Application Number:
  US09/420,218
• Time in Patent Office: 1,107 Days
• Field of Search: 428/304.4, 428/319.1, 428/319.9, 428/336, 428/447, 427/575, 427/58, 427/255.36, 427/255.392, 427/402, 427/387, 427/577, 528/21, 528/31, 524/267, 524/731
• US Class Current: 428/447
• CPC Class Codes: C07F 7/21 Cyclic compounds having at least one ring containing silicon, but no carbon in the ring
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: Y10T 428/24999 Inorganic
• CPC Class Codes: Y10T 428/31663 As siloxane, silicone or silane

Abstract

There is provided an array of alkyl substituted silsesquioxane thin film precursors having a structure wherein alkyl groups are bonded to the silicon atoms of a silsesquioxane cage. The alkyl groups may be the same as, or different than the other alkyl groups. In a first aspect, the present invention provides a composition comprising a vaporized material having the formula [R—SiO_1.5]_x[H—SiO_1.5]_y, wherein x+y=n, n is an integer between 2 and 30, x is an integer between 1 and n and y is a whole number between 0 and n. R is a C₁ to C₁₀₀ alkyl group. Also provided are films made from these precursors and objects comprising these films.

Claims

1. A low k dielectric film comprising a material having the formula

2. The method according to claim 1, wherein R¹ and R² are independently selected from C₁ to C₂₀ straight- or branched-chain alkyl group.

3. The method according to claim 2, wherein R¹ and R² are independently selected from C₁ to C₁₆ straight-or branched-chain alkyl groups.

4. The method according to claim 3, wherein R¹ and R² are independently selected from C₁ to C₆ straight-or branched-chain alkyl groups.

5. The method according to claim 4, wherein R¹ and R² are both methyl groups.

6. The film according to claim 1, wherein said film is a porous film.

7. The film according to claim 1, wherein said film has a dielectric constant of from about 2 to about 3.

8. A method for preparing a porous low k dielectric film having a preselected degree of porosity, said film comprising a material having the formula

9. The method according to claim 8, wherein said curing is carried out using a method selected from the group of heat, ultraviolet light and combinations thereof.

10. The method according to claim 9, wherein said curing is carried out by heating to a temperature of from about 150°

C. to about 700°

C.

11. The method according to claim 10, wherein said temperature is from about 200°

C. to about 500°

C.

12. The film according to claim 8, wherein said low k dielectric film has a dielectric constant of from about 2 to about 3.

13. An object comprising a low k dielectric film, said film comprising a material having the formula:

14. The object according to claim 13, wherein said object comprises a wafer.

15. The wafer according to claim 14, wherein said wafer comprises a member selected from Si, SiON, SiN, SiO₂, Cu, Ta, TaN and combinations thereof.

16. The wafer according to claim 14, wherein said wafer is a member selected from Si wafers, SiO₂ wafers and combinations thereof.

17. The wafer according to claim 16, wherein said wafer is metallized.

18. The metallized wafer according to claim 17, metallized with a member selected from copper, titanium, titanium nitride and combinations thereof.