Methods of semiconductor processing

• US 6,472,240 B2
• Filed: 04/13/2001
• Issued: 10/29/2002
• Est. Priority Date: 02/27/1998
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Hembree, David R., Akram, Salman
• Primary Examiner(s): Booth, Richard
• Assistant Examiner(s): STEVENSON, ANDRE C
• Application Number:
  US09/835,052
• Publication Number:
  US 20010012639A1
• Time in Patent Office: 564 Days
• Field of Search: 438/18, 438/287.2, 73/310.1, 735/142.5, 737/17, 445/14, 372/50
• US Class Current: 438/18
• CPC Class Codes: G01K 1/026 arrangements for monitoring a plurality of temperatures, e.g. by multiplexing
• CPC Class Codes: H01L 22/12 for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions electrical measurement of diffusions H01L22/14
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48464 the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
• CPC Class Codes: H01L 2224/8592 Applying permanent coating, e.g. protective coating
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/15156 Side view

Abstract

The present invention includes electronic device workpieces, methods of semiconductor processing and methods of sensing temperature of an electronic device workpiece. In one aspect, the invention provides an electronic device workpiece including: a substrate having a surface; a temperature sensing device borne by the substrate; and an electrical interconnect formed upon the surface of the substrate, the electrical interconnect being electrically coupled with the temperature sensing device. In another aspect, a method of sensing temperature of an electronic device workpiece includes: providing an electronic device workpiece; supporting a temperature sensing device using the electronic device workpiece; providing an electrical interconnect upon a surface of the electronic device workpiece; electrically coupling the electrical interconnect with the temperature sensing device; and sensing temperature of the electronic device workpiece using the temperature sensing device.

Claims

1. A method of semiconductor processing, comprising:

providing a semiconductor substrate;

anisotropically etching a cavity in the semiconductor substrate; and

providing a temperature sensing device within the cavity of the semiconductor substrate.

2. The method according to claim 1 further comprising:

providing an electrical interconnect upon a surface of the semiconductor substrate; and

electrically coupling the electrical interconnect with the temperature sensing device.

3. The method according to claim 2 wherein the providing the electrical interconnect comprises forming a conductive trace.

4. The method according to claim 2 wherein the electrically coupling comprises wire bonding the electrical interconnect and the temperature sensing device.

5. The method according to claim 2 wherein the electrically coupling includes contacting the electrical interconnect and the temperature sensing device.

6. The method according to claim 2 further comprising electrically coupling the electrical interconnect with circuitry external to the semiconductor substrate.

7. The method according to claim 2 further comprising electrically coupling the temperature sensing device with an edge of the semiconductor substrate using the electrical interconnect.

8. The method according to claim 1 wherein the providing comprises forming the temperature sensing device within the cavity.

9. The method according to claim 1 wherein the providing comprises positioning the temperature sensing device within the cavity.

10. The method according to claim 1 wherein the providing the semiconductor substrate comprises providing a semiconductor wafer.

11. The method according to claim 1 wherein the anisotropically etching the cavity comprises forming the cavity having at least one wall, and further comprising supporting the temperature sensing device using the at least one wall.

12. The method according to claim 1 wherein the providing the temperature sensing device comprises providing the temperature device within the cavity after the etching the cavity.