Controlled effective coupling coefficients for film bulk acoustic resonators

• US 6,472,954 B1
• Filed: 04/23/2001
• Issued: 10/29/2002
• Est. Priority Date: 04/23/2001
• Status: Expired due to Term

• Current Assignee: Chemtron Research LLC (Intellectual Ventures LLC)
• Original Assignee: Agilent Technologies, Inc.
• Inventors: Figueredo, Domingo, Ruby, Richard C., Bradley, Paul, Larson, John D. III, Oshmyansky, Yury
• Primary Examiner(s): Lee, Benny
• Assistant Examiner(s): Summons, Barbara
• Application Number:
  US09/841,234
• Publication Number:
  US 20020153965A1
• Time in Patent Office: 554 Days
• Field of Search: 333/133, 333/189-192, 29/253.5, 310/312, 310/349, 310/363, 310/364
• US Class Current: 333/133
• CPC Class Codes: H03H 2003/0471 of a plurality of resonators at different frequencies
• CPC Class Codes: H03H 3/04 for obtaining desired frequency or temperature coefficient
• CPC Class Codes: H03H 9/0571 including bulk acoustic wave [BAW] devices
• CPC Class Codes: H03H 9/587 Air-gaps
• CPC Class Codes: H03H 9/706 Duplexers
• CPC Class Codes: Y10T 29/42 Piezoelectric device making

Abstract

In an array of acoustic resonators, the effective coupling coefficient of first and second filters are individually tailored in order to achieve desired frequency responses. In a duplexer embodiment, the effective coupling coefficient of a transmit band-pass filter is lower than the effective coupling coefficient of a receive band-pass filter of the same duplexer. In one embodiment, the tailoring of the coefficients is achieved by varying the ratio of the thickness of a piezoelectric layer to the total thickness of electrode layers. For example, the total thickness of the electrode layers of the transmit filter may be in the range of 1.2 to 2.8 times the total thickness of the electrode layers of the receive filter. In another embodiment, the coefficient tailoring is achieved by forming a capacitor in parallel with an acoustic resonator within the filter for which the effective coupling coefficient is to be degraded. Preferably, the capacitor is formed of the same materials used to fabricate a film bulk acoustic resonator (FBAR). The capacitor may be mass loaded to change its frequency by depositing a metal layer on the capacitor. Alternatively, the mass loading may be provided by forming the capacitor directly on a substrate.

Claims

1. A method of fabricating an array of acoustic resonators comprising the steps of:

selecting a first target frequency response and a first target effective coupling coefficient for operation of a first film bulk acoustic resonator (FBAR) filter;

selecting a second target frequency response and a second target effective coupling coefficient for operation of a second FBAR filter, said first target effective coupling coefficient being substantially degraded relative to said second target effective coupling coefficient;

determining thicknesses and materials of piezoelectric and electrode layers for forming said first and second FBAR filters so as to achieve said first and second target frequency responses and said first and second target effective coupling coefficients, including selecting an increased electrode layer thickness for at least one electrode layer of said first FBAR filter, said increased electrode layer thickness being greater than electrode layer thicknesses selected for said second FBAR filter such that said substantially degraded first target effective coupling coefficient is achieved; and

forming said first and second FBAR filters based on said thicknesses and materials.

2. The method of claim 1 wherein said step of determining said thicknesses and materials includes determining a ratio of a thickness of a piezoelectric layer to a total thickness of electrode layers for each of said first and second FBAR filters, said ratio for said first FBAR filter being less than said ratio for said second FBAR filter.

3. The method of claim 1 wherein said step of selecting said first target coefficient includes selecting a value in the range of 2.5 percent to 4.0 percent and said step of selecting said second target coefficient includes selecting a value in the range of 4.0 percent to 6.0 percent.

4. The method of claim 1 further comprising the step of forming a duplexer to include each of:

said first FBAR filter as a transmit filter; and

said second FBAR filter as a receive filter.

5. The method of claim 1 wherein said step of forming said first and second FBAR filters includes depositing AIN as said piezoelectric layer and depositing Mo as said electrode layers, said electrode layers of said first FBAR filter having a thickness that is in the range of 1.2 to 2.8 times the thickness of electrode layers of said second FBAR filter.

6. The method of claim 1 wherein said selecting steps and said step of forming said first and second FBAR filters includes providing a first target frequency response having a center frequency that is within 100 MHz of a center frequency of said second target frequency response.

7. A duplexer comprising:

a transmit film bulk acoustic resonator (FBAR) array having transmit series FBARs connected in series and having transmit shunt FBARS; and

a receive FBAR array having receive series FBARs connected in series and having receive shunt FBARs;

wherein said transmit FBAR array has an effective coupling coefficient that is substantially less than an effective coupling coefficient of said receive FBAR array, said substantially less effective coupling coefficient being realized by providing at least some FBARs of said transmit FBAR array with substantially thicker electrode layers and substantially thinner piezoelectric layers than said FBARs of said receive FBAR array, said at least some FBARs of said transmit FBAR array each having a ratio of thickness of said piezoelectric layer to total thickness of said electrode layers, with said ratio being substantially less than ratios of piezoelectric layer thickness to total electrode layer thickness for said receive series FBARs and said receive shunt FBARs.

8. The duplexer of claim 7 wherein said transmit and receive FBAR arrays have frequencies compatible with operation in a code division multiple access (CDMA) personal communication system (PCS).

9. The duplexer of claim 7 wherein said total thickness of said electrode layers of said at least some FBARs is in the range of 1.2 to 2.8 times said total electrode layer thickness for said receive series FBARs and said receive shunt FBARs.

10. A duplexer comprising:

a transmit film bulk acoustic resonator (FBAR) array having transmit series FBARs connected in series and having transmit shunt FBARs; and

a receive FBAR array having receive series FBARs connected in series and having receive shunt FBARs;

wherein said transmit FBAR array has an effective coupling coefficient that is substantially less than an effective coupling coefficient of said receive FBAR array, at least some FBARs of said transmit FBAR array having substantially thicker electrode layers and substantially thinner piezoelectric layers than said FBARs of said receive FBAR array in order to attain said substantially less effective coupling coefficient that is exhibited by said transmit FBAR array.