Inductor-capacitor resonant RF switch
First Claim
1. A inductor-capacitor resonance RE switching device comprising:
- a microelectronic mechanical switch comprising;
a first dielectric layer overlying substrate;
a down electrode overlying said first dielectric layer;
a second dielectric layer overlying said down electrode;
a bridge post overlying said first dielectric layer but not overlying said down electrode; and
a membrane suspended over said down electrode wherein one end of said membrane is fixed to the top of said bridge post, wherein an electrostatic potential between said membrane and said down electrode will cause said membrane to flex down toward said down electrode, and wherein said flexing of said membrane will cause the capacitance of said switching device to vary; and
a spiral inductor comprising a metal line configured in a spiraling pattern with a first end connected to said bridge post and a second end forming an output node.
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Accused Products
Abstract
A new inductor-capacitor resonance RF (LCR-RF) switching device is achieved. The device comprises a microelectronic mechanical switch and a spiral inductor. The microelectronic mechanical switch comprises, first, a first dielectric layer overlying a substrate. A down electrode overlies the first dielectric layer. A second dielectric layer overlies the down electrode. An up electrode overlies the down electrode with the second dielectric layer therebetween. A bridge post overlies the first dielectric layer and does not contact the down electrode or the up electrode. Multiple bridge posts may be used. Finally, a membrane is suspended over said down electrode. One end of the membrane is fixed to the top of the bridge post. An electrostatic potential between the membrane and the down electrode will cause the membrane to flex down toward the down electrode. This flexing of the membrane will cause the capacitance of the switching device to vary. The spiral inductor comprises a metal line configured in a spiraling pattern with a first end connected to the bridge post and a second end forming an output node. A dual damascene method to form the LCR-RF switch is also achieved.
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Citations
30 Claims
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1. A inductor-capacitor resonance RE switching device comprising:
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a microelectronic mechanical switch comprising;
a first dielectric layer overlying substrate;
a down electrode overlying said first dielectric layer;
a second dielectric layer overlying said down electrode;
a bridge post overlying said first dielectric layer but not overlying said down electrode; and
a membrane suspended over said down electrode wherein one end of said membrane is fixed to the top of said bridge post, wherein an electrostatic potential between said membrane and said down electrode will cause said membrane to flex down toward said down electrode, and wherein said flexing of said membrane will cause the capacitance of said switching device to vary; and
a spiral inductor comprising a metal line configured in a spiraling pattern with a first end connected to said bridge post and a second end forming an output node. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
an input signal line connected to said down electrode; and
a ground reference connected to said output node to thereby form a shunt configuration.
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3. The device according to claim 1 further comprising:
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an input signal line connected to said down electrode; and
an output signal line connected to said output node to thereby form a series configuration.
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4. The device according to claim 1 further comprising an up electrode wherein said up electrode overlies said down electrode with said second dielectric layer therebetween and wherein said flexing downward causes said membrane to contact said up electrode.
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5. The device according to claim 1 wherein said membrane and said bridge post comprise metal.
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6. The device according to claim 1 wherein said membrane has a thickness of between about 5,000 Angstroms and 25,000 Angstroms.
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7. The device according to claim 1 wherein said membrane and said bridge post are formed by a dual damascene process.
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8. The device according to claim 1 further comprising a second bridge post wherein said second bridge post is opposite said bridge post and wherein a second end of said membrane is fixed to the top of said second bridge post such that the combination of said bridge post, said second bridge post, and said membrane forms a bridge profile.
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9. The device according to claim 1 wherein said capacitance is between about 10 pF and 30 pF when said microelectronic mechanical switch is in a Down state.
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10. The device according to claim 1 wherein said spiral inductor value is between about 1 nH and 30 nH.
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11. The device according to claim 1 wherein said capacitance and said spiral inductor create a resonant frequency of between about 1 GHz and 100 GHz when said microelectronic mechanical switch is in a Down state.
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12. A inductor-capacitor resonance RF switching device comprising:
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a microelectronic mechanical switch comprising;
a first dielectric layer overlying a substrate;
a down electrode overlying said first dielectric layer;
a second dielectric layer overlying said down electrode;
an up electrode overlying said down electrode with said second dielectric layer therebetween;
a bridge post overlying said first dielectric layer but not overlying said down electrode and said up electrode; and
a membrane suspended over said up electrode wherein one end of said membrane is fixed to top of said bridge post, wherein an electrostatic potential between said membrane and said down electrode will cause said membrane to flex down toward said down electrode, wherein said flexing downward causes said membrane to contact said up electrode, and wherein said flexing of said membrane will cause the capacitance of said inductor-capacitor resonance RF switching device to vary; and
a spiral inductor comprising a metal line configured in a spiraling pattern with a first end connected to said bridge post and a second end forming an output node. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21)
an input signal line connected to said down electrode; and
a ground reference connected to said output node to thereby form a shunt configuration.
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14. The device according to claim 12 further comprising:
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an input signal line connected to said down electrode; and
an output signal line connected to said output node to thereby form a series configuration.
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15. The device according to claim 12 wherein said membrane and said bridge post comprise metal.
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16. The device according to claim 12 wherein said membrane has a thickness of between about 5,000 Angstroms and 25,000 Angstroms.
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17. The device according to claim 12 wherein said membrane and said bridge post are formed by a dual damascene process.
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18. The device according to claim 12 further comprising a second bridge post wherein said second bridge post is opposite said bridge post and wherein a second end of said membrane is fixed to the top of said second bridge post such that the combination of said bridge post, said second bridge post, and said membrane forms a bridge profile.
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19. The device according to claim 12 wherein said capacitance is between about 10 pF and 30 pF when said microelectronic mechanical switch is in a Down state.
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20. The device according to claim 12 wherein said spiral inductor value is between about 1 nH and 30 nH.
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21. The device according to claim 12 wherein said capacitance and said spiral inductor create a resonant frequency of between about 1 GHz and 100 GHz when said microelectric mechanical switch is in a Down state.
- 22. A multiple channel, series-configured, switching circuit comprising a plurality of MEMS capacitor and spiral inductor pairs, wherein in each said pair, a first end of each said spiral inductor is connected to a bridge post of each said MEMS capacitor, wherein down electrodes of all said MEMS capacitors are connected to a single input signal, wherein a second end of each said spiral inductor forms a plurality of output signals, and wherein activation of any said MEMS capacitor in any said pair causes said input signal to flow to an output signal for said pair.
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24. A method to form a microelectronic mechanical switch device in the manufacture of an integrated circuit device comprising:
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providing a down electrode overlying a substrate with a first dielectric layer therebetween;
providing a second dielectric layer overlying said down electrode layer;
forming an up electrode overlying said second dielectric layer;
depositing a first silicon dioxide layer overlying said up electrode and said second dielectric layer;
depositing a silicon nitride layer overlying said first silicon oxide layer;
depositing a second silicon dioxide layer overlying said silicon nitride layer;
patterning said first silicon dioxide layer, said silicon nitride layer, said first silicon dioxide layer, and said second dielectric layer to form deep trenches for planned bridge posts;
patterning said second silicon dioxide layer and said silicon nitride layer to form shallow trenches for planned membrane wherein said second silicon dioxide layer and said silicon nitride layer are etched through to said first silicon dioxide layer and wherein said shallow trenches connect to said deep trenches;
depositing a metal layer overlying said second silicon dioxide layer, said silicon nitride layer, said first silicon dioxide layer, and said second dielectric layer to fill said deep trenches and said shallow trenches;
polishing down said metal layer to said second silicon dioxide layer to complete said bridge posts and said membrane; and
etching away said second silicon dioxide layer, said silicon nitride layer and said first silicon dioxide layer to release said membrane and to complete said microelectronic mechanical switch device in the manufacture of said integrated circuit device. - View Dependent Claims (25, 26, 27, 28, 29, 30)
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Specification