In-stack single-domain stabilization of free layers for CIP and CPP spin-valve or tunnel-valve read heads

• US 6,473,279 B2
• Filed: 01/04/2001
• Issued: 10/29/2002
• Est. Priority Date: 01/04/2001
• Status: Expired due to Fees

• Current Assignee: HGST Netherlands B.V. (Western Digital Corporation)
• Original Assignee: International Business Machines Corporation
• Inventors: Yang, Bo, Smith, Neil
• Primary Examiner(s): Cao, Allen
• Assistant Examiner(s): Nguyen, Dzung C.
• Application Number:
  US09/754,908
• Publication Number:
  US 20020085323A1
• Time in Patent Office: 663 Days
• Field of Search: 360/113, 360/224.12, 324/252, 324/207.21, 204/192.11, 204/192.2
• US Class Current: 360/324.12
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00
• CPC Class Codes: G01R 33/098 comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
• CPC Class Codes: G11B 5/012 Recording on, or reproducing or erasing from, magnetic disks G11B17/00, G11B19/00 take precedence
• CPC Class Codes: G11B 5/3903 using magnetic thin film layers or their effects, the films being part of integrated structures
• CPC Class Codes: G11B 5/3909 Arrangements using a magnetic tunnel junction
• CPC Class Codes: G11B 5/3932 Magnetic biasing films

Abstract

An improved MR sensor has a ferromagnetic free layer whose magnetization is stabilized by an in-stack three layers combination, which including an auxiliary ferromagnetic layer proximate the ferromagnetic free layer, a non-magnetic spacer layer disposed between the ferromagnetic free layer and the auxiliary ferromagnetic layer, and a pinning layer adjacent to the auxiliary ferromagnetic layer. The pinning layer is directly exchange-coupled to the auxiliary ferromagnetic layer such that the magnetization of the auxiliary ferromagnetic layer is pinned. The non-magnetic spacer layer is made of a material, such as Ru, which induces an anti-ferromagnetic exchange coupling between the ferromagnetic free layer and the auxiliary ferromagnetic layer. The magnetization of the ferromagnetic free layer is stabilized in a single-domain state by the combination of the anti-ferromagnetic exchange-coupling and magnetostatic coupling between the ferromagnetic free layer and the auxiliary ferromagnetic layer.

Claims

1. A magnetoresistive (MR) sensor for sensing an external magnetic field comprising:

a) a substrate; and

b) a thin-film layered structure formed on the substrate, the layered structure comprising;

i) a pinned ferromagnetic reference layer;

ii) a means for pinning a magnetization orientation of the pinned ferromagnetic reference layer along an axis primarily parallel to a direction of the external magnetic field, whereby a magnetization direction of the pinned ferromagnetic reference layer remains essentially fixed in the presence of the external magnetic field;

iii) a ferromagnetic free layer, a magnetization of which being rotated in the presence of the external magnetic field;

iv) a first nonmagnetic spacer layer disposed between the ferromagnetic free layer and the ferromagnetic reference layer;

v) a first auxiliary ferromagnetic layer proximate to the ferromagnetic free layer;

vi) a second nonmagnetic spacer layer disposed between the ferromagnetic free layer and the first auxilIary ferromagnetic layer, the second nonmagnetic spacer layer having physical properties that induce an anti-ferromagnetic coupling between the ferromagnetic free layer and the first auxillary ferromagnetic layer; and

vii) a pinning layer that directly exchange-couples to the first auxiliary ferromagnetic layer along an axis that is primarily orthogonal to the direction of the magnetization of the ferromagnetic reference layer;

wherein the magnetization of the ferromagnetic free layer remains stabilized in a direction primarily orthogonal to that of the ferromagnetic reference layer in an absence of the external magnetic field.

2. The MR sensor of claim 1, wherein a mechanism of the anti-ferromagnetic coupling between the ferromagnetic free layer and the first auxiliary ferromagnetic layer is an RKKY-like exchange coupling.

3. The MR sensor of claim 2, wherein a strength of the anti-ferromagnetic coupling is not sufficient to maintain rigid, anti-parallel alignment of the magnetizations of the ferromagnetic free layer and the first auxiliary ferromagnetic layer in the presence of the external magnetic field.

4. The MR sensor of claim 1, wherein the means for pinning the magnetization of the ferromagnetic reference layer comprises an exchange pinning layer made of an anti-ferromagnetic or ferrimagnetic material adjacent to and in contact with the ferromagnetic reference layer.

5. The MR sensor of claim 1, wherein the means for pinning the magnetization of the ferromagnetic reference layer comprises:

a) an exchange pinning layer made of an anti-ferromagnetic or ferrimagnetic material adjacent to and in contact with a ferromagnetic keeper layer; and

b) a non-magnetic spacer layer disposed between the ferromagnetic keeper layer and the ferromagnetic reference layer, the non-magnetic spacer layer having physical properties that promote an anti-ferromagnetic exchange coupling between the ferromagnetic keeper layer and the ferromagnetic reference layer, a strength of the anti-ferromagnetic exchange coupling being sufficient to maintain essentially rigid, anti-parallel alignment of the magnetizations of the ferromagnetic keeper layer and the ferromagnetic reference layer in the presence of the external magnetic field.

6. The MR sensor of claim 1, wherein the first nonmagnetic spacer layer comprises an electrically conductive layer.

7. The MR sensor of claim 1, wherein the first nonmagnetic spacer layer comprises an insulating layer, which serves as a tunneling barrier to form a magnetic tunnel junction sensor.

8. The MR sensor of claim 1, wherein the first auxiliary ferromagnetic layer comprises a soft ferromagnetic material selected from the group consisting of Co, Ni, Fe and their alloys.

9. The MR sensor of claim 1, wherein the ferromagnetic free layer comprises a soft ferromagnetic material selected from the group consisting of Co, Ni, Fe and their alloys.

10. The MR sensor of claim 1, wherein a choice of material for the first auxiliary ferromagnetic layer is independent of that of the ferromagnetic free layer.

11. The MR sensor of claim 1, wherein the second nonmagnetic spacer layer comprises a material selected from the group consisting of Ru, Rh, Cr, Ir and their alloys.

12. The MR sensor of claim 1, wherein the pinning layer comprises an anti-ferromagnetic material.

13. The MR sensor of claim 1, wherein the pinning layer comprises a ferrimagnetic material.

14. The MR sensor of claim 1 further comprising a second auxiliary ferromagnetic layer, wherein the pinning layer is disposed between the first and second auxiliary ferromagnetic layer.

15. A MR sensing head comprising:

a) a first shield proximate a first gap;

b) a second shield proximate a second gap; and

c) a MR sensor disposed between the first and second gaps wherein the MR sensor includes;

j) a substrate; and

jj) a thin-film layered structure formed on the substrate, the thin-film layer structure comprising;

i) a pinned ferromagnetic reference layer;

ii) a means for pinning a magnetization orientation of the pinned ferromagnetic reference layer along an axis primarily parallel to a direction of an external magnetic field to be sensed, whereby a magnetization direction of the pinned ferromagnetic reference layer remains essentially fixed in the presence of the external magnetic field;

iii) a ferromagnetic free layer, a magnetization of which being rotated in the presence of the external magnetic field;

iv) a first nonmagnetic spacer layer disposed between the ferromagnetic free layer and the ferromagnetic reference layer;

v) a first auxiliary ferromagnetic layer proximate to the ferromagnetic free layer;

vi) a second nonmagnetic spacer layer disposed between the ferromagnetic free layer and the first auxiliary ferromagnetic layer, the second nonmagnetic spacer layer having physical properties that induce an anti-ferromagnetic coupling between the ferromagnetic free layer and the first auxiliary ferromagnetic layer; and

vii) a pinning layer that directly exchange-couples to the first auxiliary ferromagnetic layer along an axis that is primarily orthogonal to the direction of the magnetization of the ferromagnetic reference;

wherein the magnetization of the ferromagnetic free layer remains stabilized in a direction primarily orthogonal to that of the ferromagnetic reference layer in an absence of the external magnetic field.

16. The MR sensing head of claim 15, wherein a mechanism of the anti-ferromagnetic coupling between the ferromagnetic free layer and the first auxiliary ferromagnetic layer is an RKKY-like exchange coupling.

17. The MR sensing head of claim 16, wherein a strength of the anti-ferromagnetic coupling is not sufficient to maintain rigid, anti-parallel alignment of the magnetizations of the ferromagnetic free layer and the first auxiliary ferromagnetic layer in the presence of the external magnetic field.

18. The MR sensing:

head of claim 15, wherein the means for pinning the magnetization of the ferromagnetic reference layer comprises an exchange pinning layer made of an anti-ferromagnetic or ferrimagnetic material adjacent to and in contact with the ferromagnetic reference layer.

19. The MR sensing head of claim 15, wherein the means for pinning the magnetization of the ferromagnetic reference layer comprises:

a) an exchange pinning layer made of an anti-ferromagnetic or ferrimagnetic material adjacent to and in contact with a ferromagnetic keeper layer; and

b) a non-magnetic spacer layer disposed between the ferromagnetic keeper layer and the ferromagnetic reference layer, the non-magnetic spacer layer having physical properties that promote an anti-ferromagnetic exchange coupling between the ferromagnetic keeper layer and the ferromagnetic reference layer, a strength of the anti-ferromagnetic exchange coupling being sufficient to maintain essentially rigid, anti-parallel alignment of the magnetizations of the ferromagnetic keeper layer and the ferromagnetic reference layer in the presence of the external magnetic field.

20. The MR sensing head of claim 15, wherein the first nonmagnetic spacer layer comprises an electrically conductive layer.

21. The MR sensing head of claim 15, wherein the first nonmagnetic spacer layer comprises an insulating layer, which serves as a tunneling barrier to form a magnetic tunnel junction sensor.

22. The MR sensing head of claim 15, wherein the first auxiliary ferromagnetic layer comprises a soft ferromagnetic material selected from the group consisting of Co, Ni, Fe and their alloys.

23. The MR sensing head of claim 15, wherein the ferromagnetic free layer comprises a soft ferromagnetic material selected from the group consisting of Co, Ni, Fe and their alloys.

24. The MR sensing head of claim 15, wherein a choice of the material for the first auxiliary ferromagnetic layer is independent of that for the ferromagnetic free layer.

25. The MR sensing head of claim 15, wherein the second nonmagnetic spacer layer comprises a material selected from the group consisting of Ru, Rh, Cr, Ir and their alloys.

26. The MR sensing head of claim 15, wherein the pinning layer comprises an anti-ferromagnetic material.

27. The MR sensing head of claim 15, wherein the pinning layer comprises a ferrimagnetic material.

28. The MR sensing head of claim 15 further comprising a second auxiliary ferromagnetic layer, wherein the pinning layer is disposed between the first and second auxiliary ferromagnetic layer.

29. A disk drive comprising:

a) a magnetic recording disk;

b) a MR sensing head containing a MR sensor;

c) an actuator for moving the MR sensing head across the magnetic recording disk;

d) a motor for spinning the magnetic recording disk relative to the MR sensing head wherein the MR sensor includes;

j) a substrate; and

jj) a thin-film layered structure formed on the substrate, the thin-film layered structure comprising;

i) a pinned ferromagnetic reference layer;

ii) a means for pinning a magnetization orientation of the pinned ferromagnetic reference layer along an axis primarily parallel to a direction of an external magnetic field to be sensed, whereby a magnetization direction of the u ferromagnetic reference layer remains essentially fixed in the presence of the external magnetic field;

iii) a ferromagnetic free layer, a magnetization of which being rotated in the presence of the external magnetic field;

iv) a first nonmagnetic spacer layer disposed between the ferromagnetic free layer and the ferromagnetic reference layer;

v) a first auxiliary ferromagnetic layer proximate to the ferromagnetic free layer;

vi) a second nonmagnetic spacer layer disposed between the ferromagnetic free layer and the first auxiliary ferromagnetic layer, the second nonmagnetic spacer layer having physical properties that induce an anti-ferromagnetic coupling between the ferromagnetic free layer and the first auxiliary ferromagnetic layer; and

vii) a pinning layer that directly exchange-couples to the first auxiliary ferromagnetic layer along an axis that is primarily orthogonal to the direction of the magnetization of the ferromagnetic reference

wherein the magnetization of the ferromagnetic free layer remains stabilized in a direction primarily orthogonal to that of the ferromagnetic reference layer in an absence of the external magnetic field.