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Semiconductor memory and method for accessing semiconductor memory

  • US 6,473,329 B1
  • Filed: 05/04/2000
  • Issued: 10/29/2002
  • Est. Priority Date: 11/14/1997
  • Status: Expired due to Term
First Claim
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1. A semiconductor memory provided with ferroelectric layers, comprising:

  • memory cells each comprising a ferroelectric memory FET having a ferroelectric layer between a gate electrode and a semiconductor layer;

    buffer cells capable of storing data from the memory cells to prevent the data from being lost when a disturbing voltage is applied to the memory cells; and

    buffer circuits for transferring the data in the memory cells to the buffer cells and further writing the transferred data again to the memory cells.

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