Semiconductor device and manufacturing method thereof
First Claim
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1. A method of manufacturing a semiconductor device, comprising the steps of;
- forming a first conductive;
forming an inorganic insulating film over said first conductive film;
forming an organic resin film over said inorganic insulating film;
forming a contact hole in a laminated film formed of said inorganic insulating film and said organic resin film in one process by etching with a selective ratio of an etching rate of said inorganic insulating film to an etching rate of said organic resin film from 1.6 to 2.9; and
forming a second conductive film in said contact hole.
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Abstract
It is an object of the present invention to provide a manufacturing method of semiconductor device whereby the number of processes is decreased due to simultaneously forming a contact hole in a lamination film of different material and film thickness (inorganic insulating film and organic resin film) by conducting etching once. By setting the selective ratio of dry etching (etching rate of organic resin film 503/etching rate of inorganic insulating film 502 containing nitrogen) from 1.6 to 2.9, preferably 1.9, the shape and the size of the contact holes to be formed even in a film of different material and film thickness can be nearly the same in both of the contact holes.
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Citations
35 Claims
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1. A method of manufacturing a semiconductor device, comprising the steps of;
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forming a first conductive;
forming an inorganic insulating film over said first conductive film;
forming an organic resin film over said inorganic insulating film;
forming a contact hole in a laminated film formed of said inorganic insulating film and said organic resin film in one process by etching with a selective ratio of an etching rate of said inorganic insulating film to an etching rate of said organic resin film from 1.6 to 2.9; and
forming a second conductive film in said contact hole. - View Dependent Claims (2, 3, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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4. A method of manufacturing a semiconductor device, comprising the steps of;
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forming a first conductive film;
forming an inorganic insulating film over said first conductive film;
forming an organic resin film over said inorganic insulating film;
forming a contact hole in a laminated film formed of said inorganic insulating film and said organic resin film in one process to form an edge portion of said inorganic insulating film that comes in contact with a bottom surface of said contact hole into a taper shape having an angle range of 30°
to 80°
from a horizontal surface; and
forming a second conductive film in said contact hole. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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5. A method of manufacturing a semiconductor device, comprising the steps of;
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forming a first conductive film;
forming an inorganic insulating film over said first conductive film;
forming an organic resin film over said inorganic insulating film;
forming a contact hole in a laminated film formed of said inorganic insulating film and said organic resin film in one process to form an edge portion of said organic resin film that comes in contact with said inorganic insulating film into a taper shape having an angle range of 50°
to 90°
from a horizontal surface; and
forming a second conductive film in said contact hole. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32, 33, 34, 35)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsKusuyama, Yoshihiro, Suzawa, Hideomi
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Primary Examiner(s)Nguyen, Viet Q.
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Assistant Examiner(s)Nhu, David
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Application NumberUS09/535,835Time in Patent Office952 DaysField of Search438/30, 438/42, 438/149, 438/153, 438/725, 438/793, 438/794, 438/789, 438/790US Class Current438/149CPC Class CodesH01L 21/31116 by dry-etchingH01L 21/31138 by dry-etchingH01L 21/76801 characterised by the format...H01L 21/76804 by forming tapered via holesH01L 27/12 the substrate being other t...H01L 27/1244 for preventing breakage, pe...H01L 27/1248 with a particular compositi...H01L 2924/00 Indexing scheme for arrange...H01L 2924/0002 Not covered by any one of g...
