Method of making a scalable two transistor memory device

• US 6,475,857 B1
• Filed: 06/21/2001
• Issued: 11/05/2002
• Est. Priority Date: 06/21/2001
• Status: Expired due to Term

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, Woosik, Kang, Hokyu, Song, Seungheon
• Primary Examiner(s): BOOTH, RICHARD A
• Application Number:
  US09/884,912
• Time in Patent Office: 502 Days
• Field of Search: 438/238-266
• US Class Current: 438/240
• CPC Class Codes: H01L 27/105 including field-effect components
• CPC Class Codes: H10B 41/30 characterised by the memory core region
• CPC Class Codes: H10B 41/40 characterised by the peripheral circuit region
• CPC Class Codes: H10B 41/49 comprising different types of peripheral transistor
• CPC Class Codes: H10B 69/00 Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Abstract

A method of fabricating a multiple tunnel junction Scalable Two-Transistor Memory (STTM) cell array with a unit cell area as low as 4F², F representing the minimum feature dimension, which usually is the width and also the spacing of the data lines or the write (or word or control gate) lines, wherein process sequence and conditions are designed to offer wide flexibility in material choices and layer thickness at different regions of the STTM cell with surface planarity maintained at several stages of the manufacturing sequence. The processing of memory cell devices is made compatible with peripheral CMOS devices so that the devices in both areas can be made simultaneously, thereby decreasing the total number of processing steps. Insulator filled trenches around the device regions, source/drain and the gate regions of the peripheral devices are formed simultaneously with the corresponding regions of the memory cell devices.

Claims

1. A method of manufacturing a scalable two-transistor memory cell array having three control lines including bit lines, data lines and word lines, each memory cell having a bottom transistor and a top transistor in a stacked configuration, comprising the steps of:

providing a substrate having an x-axis and a y-axis;

depositing a first gate dielectric layer on the substrate;

depositing a first conductive layer on the first gate dielectric layer to form a storage node layer;

depositing alternating layers of a low band gap semiconductor layer and a large band gap insulator layer to form a multiple tunnel junction barrier on the storage node layer;

depositing a second conductive layer to form a source layer of the top transistor;

etching the second conductive layer, the multiple tunnel junction layer, the first conductive layer and the first gate dielectric layer into the substrate to form a plurality of island-type trench isolation regions using a photolithographic process;

depositing a first insulating layer over the substrate to fill the trench regions;

depositing a third conductive layer over the first insulating layer and the second conductive layer to form data lines;

etching the third conductive layer, the second conductive layer, multiple tunnel junction layer, the first conductive layer and the first gate dielectric layer until the substrate surface is exposed, to form grooves in a direction parallel with y-axis in between the island-type filled trench isolation regions using a photolithographic process;

implanting impurities in the exposed substrate to form the source/drain extension regions of the bottom transistor in the grooves formed in a direction parallel with the y-axis;

forming bit lines in the grooves formed in a direction parallel with the y-axis;

depositing a second insulating layer over the cell array and etched grooves in a direction parallel with the y-axis;

forming a photoresist pattern defining control gate lines over the second insulating layer;

performing an etching process to etch away the second insulating layer between and on top of adjacent memory cells in a direction parallel with the x-axis;

removing the photoresist pattern;

depositing second gate dielectric layers on the sidewalls of the multiple tunnel junction barrier structure;

depositing fourth conductive layer over the entire surface of the array; and

forming the word lines by chemical mechanical polishing (CMP) or etching of the fourth conductive layer.

2. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 1, wherein the substrate material is selected from the group consisting of silicon, silicon germanium, silicon germanium on silicon, silicon germanium carbide on silicon, and silicon on insulator (SOI).

3. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 1, wherein the first gate dielectric layer is a silicon oxide layer of thickness between about 15-100 angstroms.

4. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 1, wherein the first conductive layer is a doped semiconductor storage node layer having a thickness of up to 5,000 angstroms.

5. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 4, wherein the doped semiconductor storage node layer is made of a material selected from the group consisting of silicon, germanium, silicon germanium, and silicon germanium carbide.

6. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 1, wherein the number of alternating layers forming the multiple tunnel junction is between 2 to 20 layers.

7. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 1, wherein the low band gap semiconductor layers of the multiple tunnel junction barrier on the storage node have a thickness of up to 1,000 angstroms.

8. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 1, wherein the low band gap semiconductor layers forming the multiple tunnel junction barrier on the storage node have a band gap of less than about 2 eV.

9. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 1, wherein material of the low band gap semiconductor layers forming the multiple tunnel junction barrier on the storage node is selected from the group consisting of silicon, germanium, silicon germanium, and silicon germanium carbide.

10. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 1, wherein material of the low band gap semiconductor layers forming the multiple tunnel junction barrier on the storage node is either doped or undoped.

11. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 1, wherein the low band gap semiconductor layers forming the multiple tunnel junction barrier are deposited on the storage node under a temperature range where the as-deposited semiconductor layer is in an amorphous phase or in a polycrystalline phase.

12. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 11, wherein the temperature range is between about 300 to 900 degrees centigrade.

13. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 1, wherein the large band gap insulator layers forming the multiple tunnel junction barrier on the storage node have a thickness of up to 100 angstroms.

14. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 1, wherein the large band gap insulator layers forming the multiple tunnel junction barrier on the storage node have a band gap of less than 10 eV.

15. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 1, wherein material of the large band gap insulator layers forming the multiple tunnel junction barrier on the storage node is selected from the group consisting of silicon oxide, silicon nitride, silicon oxynitride, metal oxides and metal nitrides.

16. A method of manufacturing a scalable two transistor memory cell array as claimed in claim 15, wherein the metal oxides and metal nitrides include HfO_x, ZrO_x, Al₂O₃ and AlN.

17. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 1, wherein the second conductive layer forming the source layer of the top transistor is a doped semiconductor layer having a thickness of up to 5,000 angstroms.

18. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 17, wherein the material for doped semiconductor layer, forming the source layer of the top transistor, is selected from the group consisting of silicon, germanium, silicon germanium, and silicon germanium carbide.

19. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 1, wherein a chemical mechanical polishing (CMP) stopping layer is deposited on the second conductive layer, which forms the source layer of the top transistor.

20. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 19, wherein the chemical mechanical polishing (CMP) stopping layer is SiN.

21. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 19, wherein the CMP stopping layer is etched to form a CMP stopping layer pattern before etching the second conductive layer, the multiple tunnel junction layer, the first conductive layer, the gate dielectric layer and into the substrate to form a plurality of island-type trench isolation regions.

22. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 21, wherein the second conductive layer, the multiple tunnel junction layer, the first conductive layer, and the first gate dielectric layer are etched into the substrate by using the CMP stopping layer pattern as the etch mask to form a plurality of trench regions.

23. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 1, wherein the first insulating layer filling the trench regions is silicon dioxide.

24. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 22, wherein the CMP stopping layer is removed before depositing the third conductive layer over the first insulating layer and the second conductive layer.

25. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 1, wherein material for the third conductive layer is selected from the group consisting of a heavily doped polysilicon, polycide and metals.

26. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 1, wherein a capping layer is deposited over the third conductive layer.

27. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 26, wherein the capping layer material is SiN.

28. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 26, wherein the capping layer is etched before etching the third conductive layer, the second conductive layer, multiple tunnel junction layer, the first conductive layer and the first gate dielectric layer to form grooves in a direction parallel with y-axis in between the island-type filled trench isolation regions.

29. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 1, wherein the bottom layer of the top transistor (or second) gate dielectric layers is formed before implanting impurities in the exposed substrate to form the source/drain extension regions of the bottom transistor.

30. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 29, wherein material for the bottom layer of the second gate dielectric layers is a thermal oxide or a multiple-insulator combination including the thermal oxide.

31. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 29, wherein the formation of the bottom layer of the second gate dielectric layers involves a thermal oxidation step in order to cure any multiple tunnel junction barrier layer sidewall damage caused by etching during formation of the grooves in a direction parallel with y-axis.

32. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 29, wherein during the formation of the bottom layer of the second gate dielectric layers, the substrate surface between the data lines is oxidized to remove any damaged substrate surface layer caused by etching during formation of the grooves in a direction parallel with y-axis.

33. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 1, wherein a sidewall spacer is formed on the sidewall surface of the memory cell in the grooves formed in a direction parallel with y-axis after the source/drain extension regions of the bottom transistor are formed.

34. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 33, wherein the sidewall spacer is formed of an oxide layer or a nitride layer.

35. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 33, wherein the substrate is subjected to a heavy dose of ion implantation to form a heavily doped section within the source/drain extension regions of the bottom transistor.

36. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 35, wherein after forming the heavily doped sections within the source/drain extension regions of the bottom transistor, a heavily doped poly-silicon or a salicidation or a polycide or a metal deposition step is performed on the heavily doped sections, to form the bit lines.

37. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 35, wherein the heavily doped sections within the source/drain extension regions create a metallization effect forming the bit lines.

38. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 35, wherein the sidewall spacers are removed after forming the bit lines.

39. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 1, wherein a conformal etch stop layer is formed on the entire surface of the memory cell array after forming the bit lines, but before depositing the second insulating layer over the cell array.

40. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 39, wherein the etch stop layer is SiON or SiN.

41. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 39, wherein the second insulating layer deposited on the etch stop layer is a CVD oxide.

42. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 39, wherein a CMP process is performed after depositing the second insulator layer in order to planarize the entire memory cell array surface.

43. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 42, wherein after etching the second insulating layer in a direction parallel with the x-axis another etching process is performed to remove the etch stop layer between adjacent memory cells in a direction parallel with the x-axis until portions of the bit lines underneath are exposed.

44. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 43, wherein the etching processes are either dry and/or wet etching.

45. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 43, wherein a CVD oxide or CVD nitride layer is deposited over the entire surface of the array to cover the exposed bit line regions and to form a top layer of the second gate dielectric layers on the sidewalls of the top transistors of the memory cells.

46. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 1, wherein the top transistor (second) gate dielectric layers are multi-layered insulators.

47. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 46, wherein the multilayered insulators are a combination of thermally grown and deposited layers.

48. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 46, wherein materials for the multilayered insulators are selected from the group consisting of SiO, SiN, SiON, metal oxides and metal nitrides.

49. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 1, wherein the word lines are formed by a metal, polysilicon/metal or polysilicon/silicide damascene process.

50. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 1, wherein the word lines are formed by a TiN/W or TiN/silicide damascene process.

51. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 1, wherein the CMP process is performed to planarize the entire surface of the memory array and to remove unwanted fourth conductive layer material until the word lines are formed.

57. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 1, wherein a cleaning process is performed to remove a native oxide layer on the second conductive layer before depositing the third conductive layer.

58. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 28, wherein the second conductive layer, multiple tunnel junction layer, the first conductive layer and the first gate dielectric layers are etched by a self-aligned dry etching process until the substrate surface is exposed using the capping layer as etch mask.

59. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 1, wherein the unit cell in the memory cell array has an area between 4F² and 8F², where F represents a width of a data line or a control gate line or a spacing between two adjacent data lines or control gate lines or the minimum feature size.

61. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 59, wherein the unit cell in the memory cell array has an area of 4F².

52. A method of manufacturing peripheral circuitry CMOS devices of a scalable two-transistor memory, comprising the steps of:

forming a gate dielectric layer, a first conductive layer, alternating layers of a multiple tunnel junction (MTJ) barrier, a second conductive layer and a CMP stopping layer at the same time these layers are formed for a memory device array;

selectively removing the CMP stopping layer, the second conductive layer and the MTJ barrier layers all on top of the peripheral CMOS device area leaving the first conductive layer and the gate dielectric layer;

forming a conductive layer on an entire surface of the substrate where the CMP stopping layer, the second conductive layer and the MTJ barrier layers are selectively removed;

patterning the conductive layer, the CMP stopping layer, the second conductive layer, the MTJ barrier layers and the first conductive layer to form data lines in the memory device array and a peripheral CMOS device gate structure in the peripheral CMOS device area; and

forming source/drain regions of the peripheral CMOS device.

53. A method of manufacturing peripheral circuitry CMOS devices as claimed in claim 52, wherein the source/drain regions of the periphery CMOS devices are formed at the same time the source/drain regions for bottom transistors of the memory cell array devices are formed.

54. A method of manufacturing peripheral circuitry CMOS devices as claimed in claim 52, wherein contacts to the source/drain regions of the periphery CMOS devices are formed at the same time contacts are made to bottom transistors of the memory cell array.

55. A method of manufacturing peripheral circuitry CMOS devices as claimed in claim 52, wherein metals, highly doped polysilicon, polycide or salicide are used to form contacts to the source/drain regions of the periphery devices.

56. A method of manufacturing peripheral circuitry CMOS devices as claimed in claim 52, wherein the conductive gate layer of the periphery CMOS devices is selected from the group consisting of metals, doped poly-silicon, polysilicon/metal and polysilicon/silicide.

60. A method of manufacturing a scalable two-transistor memory cell array as claimed in claim 55, wherein the unit cell in the memory cell array has an area between 4F² and 6F².