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UV cure process and tool for low k film formation

  • US 6,475,930 B1
  • Filed: 01/31/2000
  • Issued: 11/05/2002
  • Est. Priority Date: 01/31/2000
  • Status: Expired due to Term
First Claim
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1. A process for forming a low k dielectric layer on a semiconductor wafer, comprising the steps of:

  • depositing a carbon-doped silicon oxide film on the semiconductor wafer having a dielectric constant, wherein depositing the carbon-doped silicon oxide is achieved by chemical vapor deposition; and

    applying light energy to the carbon-doped silicon oxide film wherein at least 30% of the light energy is at a frequency greater than that of visible light to reduce the dielectric constant of the carbon-doped silicon oxide film, wherein applying the light energy is at a temperature less than about 250 degrees Celsius.

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