UV cure process and tool for low k film formation
First Claim
1. A process for forming a low k dielectric layer on a semiconductor wafer, comprising the steps of:
- depositing a carbon-doped silicon oxide film on the semiconductor wafer having a dielectric constant, wherein depositing the carbon-doped silicon oxide is achieved by chemical vapor deposition; and
applying light energy to the carbon-doped silicon oxide film wherein at least 30% of the light energy is at a frequency greater than that of visible light to reduce the dielectric constant of the carbon-doped silicon oxide film, wherein applying the light energy is at a temperature less than about 250 degrees Celsius.
22 Assignments
0 Petitions
Accused Products
Abstract
A process and system for forming a low dielectric film in a semiconductor fabrication process are disclosed. Initially, a carbon-doped silicon oxide film is deposited on a semiconductor wafer. Light energy, such as ultraviolet (UV) energy, is then applied to the deposited film to cure the film. In one embodiment, at least 30% of the light energy is at a frequency greater than that of visible light. In the preferred embodiment, the application of the light energy to the wafer does not significantly heat the wafer. The invention further contemplates a cluster tool or system suitable for forming and curing the dielectric film. The cluster tool includes a first chamber coupled to an organosilane source, a second chamber configured to apply light energy to a wafer received in the second chamber, and a robotic section suitable for controlling movement of wafers between the first chamber and the second chamber.
419 Citations
8 Claims
-
1. A process for forming a low k dielectric layer on a semiconductor wafer, comprising the steps of:
-
depositing a carbon-doped silicon oxide film on the semiconductor wafer having a dielectric constant, wherein depositing the carbon-doped silicon oxide is achieved by chemical vapor deposition; and
applying light energy to the carbon-doped silicon oxide film wherein at least 30% of the light energy is at a frequency greater than that of visible light to reduce the dielectric constant of the carbon-doped silicon oxide film, wherein applying the light energy is at a temperature less than about 250 degrees Celsius. - View Dependent Claims (2, 3)
-
-
4. A process of forming a low k dielectric layer on a semiconductor wafer, comprising the steps of:
-
placing the semiconductor wafer on a first chuck;
depositing a carbon-doped silicon oxide film on the semiconductor wafer by chemical vapor deposition using an oxygen bearing species and an organosilane; and
applying light energy to the carbon-doped silicon oxide film from a mercury-arc source. - View Dependent Claims (5, 6, 7, 8)
after depositing the carbon-doped silicon oxide film, placing the semiconductor wafer on a second chuck; and
applying a temperature of less than 425°
C. to the second chuck while applying the light energy.
-
-
7. The process of claim 6, wherein the temperature is greater than 250°
- C.
-
8. The process of claim 7 further comprising, reducing pressure on the wafer so that the pressure during the applying of the light energy is less than 20 Torr.
Specification