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MOSgated device with trench structure and remote contact and process for its manufacture

  • US 6,476,443 B1
  • Filed: 10/13/1999
  • Issued: 11/05/2002
  • Est. Priority Date: 10/14/1998
  • Status: Expired due to Term
First Claim
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1. A MOSgated device comprising:

  • a semiconductor substrate of one of the conductivity types and having an upper planar surface;

    a channel diffusion region of the other of the conductivity types which extends into said upper planar surface of said substrate and to a first depth below said surface;

    a source diffusion of said one of the conductivity types which extends into said substrate to a second depth which is less than said first depth;

    a plurality of rows of spaced, longitudinally parallel trenches formed into said substrate and into said upper planar surface to a third depth below said substrate surface which is greater than said first depth, said rows being separated by untrenched areas not lateral to said longitudinal sides of said trenches;

    an insulation gate layer formed on the walls of said plurality of trenches at least in the areas between said first and second depths;

    a conductive gate material disposed atop said insulation gate layer and within the interior of said trench;

    a gate electrode connected to said conductive gate;

    and a drain contact connected to said substrate; and

    at least one source contact disposed in an untrenched area and connected to said source diffusion region.

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