Electrically thin multi-layer bandpass radome

• US 6,476,771 B1
• Filed: 06/14/2001
• Issued: 11/05/2002
• Est. Priority Date: 06/14/2001
• Status: Expired due to Fees

• Current Assignee: Wemtec Inc.
• Original Assignee: E-Tenna Corporation
• Inventors: McKinzie, William E. III
• Primary Examiner(s): Ho, Tan
• Application Number:
  US09/883,828
• Time in Patent Office: 509 Days
• Field of Search: 343/756, 343/722, 343/745, 343/749, 343/909, 333/134, 333/202, 333/167, 333/168, 505/210
• US Class Current: 343/756
• CPC Class Codes: H01Q 1/425 comprising a metallic grid
• CPC Class Codes: H01Q 15/008 said selective devices having Sievenpipers' mushroom elements

Abstract

A bandpass radome that reduces the number of spurious resonances, and that tends to suppress Transverse Magnetic TM and Transverse Electric TE surface waves, is described. In one embodiment, the radome includes an inductive FSS ground plane layer. First and second capacitive FSS layers are disposed above the inductive ground plane layer. Third and fourth capacitive FSS layers are disposed below the inductive ground plane layer. In one embodiment, the capacitive FSS layers use patch elements and some or all of the FSS patch elements above and below the inductive ground plane layer are electrically connected to the inductive ground plane layer by a conducting posts. The conducting posts form a rodded medium to suppress TM and TE surface waves. In one embodiment the total thickness of the bandpass radome is less than λ/20 at the center frequency of the passband.

Claims

1. An electrically thin bandpass radome that exhibits a reduced number of spurious resonances, comprising:

a slotted FSS ground plane layer;

a first FSS patch layer disposed above said slotted FSS ground plane layer, said first FSS patch layer comprising a first plurality of patch elements;

a second FSS patch layer disposed above said slotted FSS ground plane layer and below said first FSS patch layer, said second FSS patch layer comprising a second plurality of patch elements;

a third FSS patch layer disposed below said slotted FSS ground plane layer, said third FSS patch layer comprising a third plurality of patch elements;

a fourth FSS patch layer disposed below said third FSS patch layer, said fourth FSS patch layer comprising a fourth plurality of patch elements;

a first plurality of conducting posts connecting said first plurality of patch elements to said ground plane;

a second plurality of conducting posts connecting said second plurality of patch elements to said ground plane;

a third plurality of conducting posts connecting said third plurality of patch elements to said ground plane; and

a fourth plurality of conducting posts connecting said fourth plurality of patch elements to said ground plane.

2. The radome of claim 1, further comprising a dielectric layer between said second FSS patch layer and said slotted FSS ground plane.

3. The radome of claim 1, further comprising a dielectric layer between said first FSS patch layer and said second FSS patch layer.

4. The radome of claim 1, wherein said first plurality of patches are square patches.

5. The radome of claim 1, wherein said first plurality of patches are square patches with rebated corners.

6. The radome of claim 1, wherein said first plurality of patches are rectangular patches.

7. The radome of claim 1, wherein said first plurality of patches are rectangular patches with rebated corners.

8. The radome of claim 1, wherein said first plurality of patches are round patches.

9. An apparatus, comprising:

a plurality of capacitive FSS layers disposed above an inductive FSS ground plane and a plurality of capacitive FSS layers disposed below said inductive FSS ground plane, one or more of said capacitive FSS layers electrically connected to said inductive FSS ground plane by conducting posts.

10. The apparatus of claim 9, further comprising dielectric layers disposed between each of said plurality of capacitive FSS layers disposed above said inductive FSS ground plane.

11. The apparatus of claim 9, further comprising dielectric layers disposed between each of said plurality of capacitive FSS layers disposed above said inductive FSS ground plane and a dielectric layer disposed between said inductive FSS ground plane and a first capacitive FSS layer from said plurality of capacitive FSS layers that is closest to said inductive FSS ground plane.

12. A filter for electromagnetic waves, comprising:

a slotted FSS ground plane layer;

a first FSS layer disposed above said slotted FSS ground plane layer, said first FSS layer comprising a first plurality of conducting elements;

a second FSS layer disposed above said slotted FSS ground plane layer and below said first FSS patch layer, said second FSS layer comprising a second plurality of conducting elements;

a third FSS layer disposed below said slotted FSS ground plane layer, said third FSS layer comprising a third plurality of conducting elements;

a fourth FSS layer disposed below said third FSS layer, said fourth FSS layer comprising a fourth plurality of conducting elements;

a first plurality of conducting posts connecting said conducting elements of at least one of said first FSS layer and said second FSS layer to said ground plane; and

a second plurality of conducting posts connecting said conducting elements of at least one of said third FSS layer and said fourth FSS layer to said ground plane.

13. The filter of claim 12, further comprising a dielectric layer between said second FSS layer and said slotted FSS ground plane.

14. The filter of claim 12, further comprising a dielectric layer between said first FSS layer and said second FSS layer.

15. The filter of claim 12, where said first plurality of conducting elements are square patches.

16. The filter of claim 12, where said first plurality of conducting elements are square patches with rebated corners.

17. The filter of claim 12, where said first plurality of conducting elements are triangular patches.

18. The filter of claim 12, wherein said first plurality of conducting elements are round patches.

19. The filter of claim 12, wherein said second FSS layer is relatively closer to said first FSS layer than to said slotted ground plane.

20. The filter of claim 12, further comprising a dielectric layer between said second FSS layer and said slotted FSS ground plane, said dielectric layer electrically thin at frequencies corresponding to a pass band of said filter.

21. The filter of claim 12, further comprising a dielectric layer between said first FSS layer and said second FSS layer, said dielectric layer electrically thin at frequencies corresponding to a pass band of said filter.

22. The filter of claim 12, further comprising one or more capacitive FSS layers disposed above said first FSS layer.

23. The filter of claim 22, further comprising one or more capacitive FSS layers disposed below said fourth FSS layer.

24. A filter for electromagnetic waves, comprising:

first means for artificially simulating a magnetic conductor across a selected frequency band;

second means for artificially simulating a magnetic conductor across said selected frequency band;

a slotted ground plane disposed between said first means and said second means;

a first plurality of conducting vias configured to connect said slotted ground plane to at least a portion of said first means; and

a second plurality of conducting vias configured to connect said slotted ground plane to at least a portion of said second means.

25. A method for filtering electromagnetic waves, comprising:

illuminating an electromagnetic filter with an electromagnetic wave;

reflecting a portion of said electromagnetic wave off of said electromagnetic filter to produce a reflected wave; and

transmitting a portion of said electromagnetic wave through said electromagnetic filter to produce a transmitted wave, said electromagnetic filter comprising;

a slotted ground plane layer;

at least one upper element layer disposed above said slotted ground plane layer, said at least one upper element layer comprising a plurality of conducting elements connected to said slotted ground plane by a plurality of conducting vias; and

at least one lower element layer disposed below said slotted ground plane layer, said at least one lower element layer comprising a plurality of conducting elements connected to said slotted ground plane by a plurality of conducting vias.