Semiconductor device manufacturing method
First Claim
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1. A semiconductor device manufacturing method comprising the steps of:
- forming a plurality of large-scale integrated circuits (LSI) over a semiconductor wafer;
cutting the semiconductor wafer into individual LSI chips, each chip having a main surface and a rear surface opposite from the main surface, the main surface having circuits formed thereon;
rearranging and integrating a predetermined number N of cut LSI chips from among the cut LSI chips in a jig having openings with a size commensurate with the dimensions of the LSI chip, the cut LSI chips being integrated in the jig such that the rear surface of each chip is in contact with the jig and the main surface is exposed for inspection, wherein at least one part of the jig having the openings has a coefficient of thermal expansion that is approximately equal to that of the LSI chips;
inspecting the cut LSI chips as a unit through a plurality of inspecting steps, and screening to select LSI chips basis on an inspection result obtained in said inspecting step.
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Abstract
Semiconductor device chips manufacturing and inspecting method is disclosed in which a semiconductor wafer is cut into individual LSI chips. The LSI chips are rearranged and integrated into a predetermined number. The cut LSI chips are integrated in a jig having openings with a size commensurate with the dimensions of the LSI chip. At least one part of the jig having such openings has a coefficient of thermal expansion that is approximately equal to that of the LSI chips. The integrated predetermined number of chips are subjected to an inspection process in a subsequent inspection step thereby improving efficiency and reducing cost.
12 Citations
13 Claims
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1. A semiconductor device manufacturing method comprising the steps of:
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forming a plurality of large-scale integrated circuits (LSI) over a semiconductor wafer;
cutting the semiconductor wafer into individual LSI chips, each chip having a main surface and a rear surface opposite from the main surface, the main surface having circuits formed thereon;
rearranging and integrating a predetermined number N of cut LSI chips from among the cut LSI chips in a jig having openings with a size commensurate with the dimensions of the LSI chip, the cut LSI chips being integrated in the jig such that the rear surface of each chip is in contact with the jig and the main surface is exposed for inspection, wherein at least one part of the jig having the openings has a coefficient of thermal expansion that is approximately equal to that of the LSI chips;
inspecting the cut LSI chips as a unit through a plurality of inspecting steps, and screening to select LSI chips basis on an inspection result obtained in said inspecting step. - View Dependent Claims (2, 3, 4, 10)
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5. A semiconductor device inspection method of inspecting semiconductor device chips obtained by forming a plurality of large-scale integrated circuits over the semiconductor wafer and cutting the semiconductor wafer into individual LSI chips, each chip having a main surface and a rear surface opposite from the main surface, the main surface having circuits formed thereon, the method comprising the steps of:
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rearranging said cut LSI chips and integrating a predetermined number N of said cut LSI chips in a jig having openings with a size commensurate with the dimensions of the LSI chip, the cut LSI chips being integrated in the jig such that the rear surface of each chip is in contact with the jig and the main surface is exposed for inspection, at least one part of the jig having the openings has a coefficient of thermal expansion that is approximately equal to that of the LSI chips;
inspecting said number N of cut LSI chips as a unit through a plurality of inspecting steps; and
screening to select LSI chips basis on an inspection result obtained in said inspecting step. - View Dependent Claims (6, 7, 11)
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8. A semiconductor device manufacturing method comprising the steps of:
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forming a plurality of large-scale integrated circuits (LSI) over a semiconductor wafer;
cutting the semiconductor wafer into individual LSI chips, each chip having a main surface and a rear surface opposite from the main surface, the main surface having circuits formed thereon;
rearranging and integrating a predetermined number N of cut LSI chips from among the cut LSI chips, the cut LSI chips being integrated in the jig such that the rear surface of each chip is in contact with the jig and the main surface is exposed for inspection;
inspecting the cut LSI chips in a jig as a unit through a plurality of inspecting steps; and
screening to select LSI chips based on an inspection result obtained in said inspecting steps. - View Dependent Claims (12)
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9. A semiconductor device manufacturing method comprising the steps of:
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forming a plurality of large-scale integrated circuits (LSI) over a semiconductor wafer;
cutting the semiconductor wafer into individual LSI chips, each chip having a main surface and a rear surface opposite from the main surface, the main surface having circuits formed thereon;
rearranging and integrating a predetermined number N of cut LSI chips from among the cut LSI chips, the cut LSI chips are integrated in a jig, the cut LSI chips being integrated in the jig such that the rear surface of each chip is in contact with the jig and the main surface is exposed for inspection, wherein at least one part of the jig uses silicon;
inspecting the cut LSI chips in a jig as a unit through a plurality of inspecting steps; and
screening to select LSI chips based on an inspection result obtained in said inspecting steps. - View Dependent Claims (13)
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Specification