Method of producing vacuum container

• US 6,479,314 B2
• Filed: 09/06/2001
• Issued: 11/12/2002
• Est. Priority Date: 09/08/2000
• Status: Active Grant

• Current Assignee: Murata Manufacturing Co Limited
• Original Assignee: Murata Manufacturing Co Limited
• Inventors: Hara, Tetsuzo, Shibahara, Teruhisa
• Primary Examiner(s): Niebling, John F.
• Assistant Examiner(s): Simkovic, Viktor
• Application Number:
  US09/948,302
• Publication Number:
  US 20020072143A1
• Time in Patent Office: 432 Days
• Field of Search: 438/26, 438/51, 438/55, 438/64, 438/67, 438/115, 438/125, 438/126, 438/127, 156/382, 735/143.6
• US Class Current: 438/51
• CPC Class Codes: B81C 1/00293 maintaining a controlled atmosphere with processes not provided for in B81C1/00285
• CPC Class Codes: B81C 2203/0118 Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
• CPC Class Codes: B81C 2203/031 Anodic bondings
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A semiconductor substrate is coupled to the upper side of a base. After the semiconductor substrate is processed, a lid material is anode-coupled to the semiconductor substrate. For the anode-coupling, first, the semiconductor substrate and the lid material are anode-coupled in a spot pattern. After this, the semiconductor substrate and the lid material are wholly anode-coupled to each other. Thereafter, the laminate including the base, the semiconductor substrate, and the lid material are divided and separated into predetermined individual areas. Thus, a vacuum container having a vacuum cavity formed inside of the laminate including the base layer, the semiconductor layer, and the lid layer can be formed. The vacuum degree of the vacuum cavity of the vacuum container is considerably enhanced compared to that by a conventional process of producing a vacuum container. In addition, scattering of the vacuum degrees of the vacuum cavities can be suppressed.

Claims

1. A method of producing a vacuum container which has a vacuum cavity formed inside a laminate including a base layer, a semiconductor layer, and a lid layer, comprising the steps:

coupling a semiconductor substrate to the upper side of a base;

anode-coupling a lid material to the upper side of the semiconductor substrate to form a laminate; and

dividing and separating the laminate into predetermined individual areas;

the lid material being placed on the upper side of the semiconductor substrate after the semiconductor substrate is coupled to the base, the semiconductor substrate and the lid material being anode-coupled to each other in a spot pattern, and succeedingly, the semiconductor substrate and the lid material being entirely anode-coupled to each other.

2. A method of producing a vacuum container according to claim 1, wherein the body of the base and the semiconductor substrate coupled to each other and the lid material are arranged in the atmosphere, the semiconductor substrate and the lid material are anode-coupled to each other in a spot pattern, and succeedingly, the semiconductor substrate and the lid material are entirely anode-coupled to each other in a vacuum in which vacuum-exhausting is carried out.