Method of fabricating a semiconductor device
First Claim
1. A method for manufacturing a semiconductor device comprising a plurality of n-channel and p-channel type thin film transistors, said method comprising:
- forming a semiconductor film comprising silicon over a substrate comprising a glass;
crystallizing said semiconductor film by a heat treatment;
patterning said semiconductor film to form semiconductor regions;
doping first impurities into said semiconductor regions, wherein said first impurities comprise an n-type impurity and are doped by an ion doping process;
forming a mask over a portion of said semiconductor regions;
doping second impurities into at least one of said semiconductor regions over which said mask is not formed, wherein said second impurities comprise a p-type impurity and are doped by an ion doping process; and
performing a rapid thermal annealing to said semiconductor regions by irradiating a light comprising an infrared light after said doping process.
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Abstract
Two kinds of TFTs are fabricated by the same process with a high production yield to manufacture an active-matrix circuit and a peripheral driver circuit on the same substrate. The active-matrix circuit is required to have a high mobility and a high ON/OFF current ratio. The peripheral driver circuit needs a complex interconnection structure. The active-matrix circuit and the peripheral driver circuit comprising the TFTs are fabricated monolithically. In this step, the gate electrodes of the TFTs of the active-matrix circuit is coated with an anodic oxide on their top and side surfaces. The gate electrodes of the TFTs of the peripheral driver circuit is coated with the anodic oxide on only their top surfaces; substantially no anodic oxide is present on the side surfaces.
162 Citations
72 Claims
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1. A method for manufacturing a semiconductor device comprising a plurality of n-channel and p-channel type thin film transistors, said method comprising:
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forming a semiconductor film comprising silicon over a substrate comprising a glass;
crystallizing said semiconductor film by a heat treatment;
patterning said semiconductor film to form semiconductor regions;
doping first impurities into said semiconductor regions, wherein said first impurities comprise an n-type impurity and are doped by an ion doping process;
forming a mask over a portion of said semiconductor regions;
doping second impurities into at least one of said semiconductor regions over which said mask is not formed, wherein said second impurities comprise a p-type impurity and are doped by an ion doping process; and
performing a rapid thermal annealing to said semiconductor regions by irradiating a light comprising an infrared light after said doping process. - View Dependent Claims (2, 3, 4, 5)
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6. A method for manufacturing a semiconductor device comprising a plurality of n-channel and p-channel type thin film transistors, said method comprising:
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forming a semiconductor film comprising silicon over a substrate comprising a glass;
crystallizing said semiconductor film by a heat treatment;
patterning said semiconductor film to form semiconductor regions;
doping an n-type impurity by an ion doping process into said semiconductor regions;
forming a mask over a portion of said semiconductor islands;
doping a p-type impurity by an ion doping process into at least one of said semiconductor regions over which said mask is not formed; and
performing a rapid thermal annealing to said semiconductor regions by irradiating a light comprising an infrared light after said doping process, wherein a mask is provided over channel regions of said semiconductor regions so as not to dope said n-type impurity and said p-type impurity into said channel regions. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13)
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14. A method for manufacturing an active matrix type display device comprising a plurality of n-channel and p-channel type thin film transistors, said method comprising:
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forming a semiconductor film comprising silicon over a substrate comprising a glass;
crystallizing said semiconductor film by a heat treatment;
patterning said semiconductor film to form semiconductor regions;
doping an n-type impurity by an ion doping process into said semiconductor regions;
forming a mask over a portion of said semiconductor regions;
doping a p-type impurity by an ion doing process into at least one of said semiconductor regions over which said mask is not formed;
performing a rapid thermal annealing to said semiconductor regions by irradiating a light comprising an infrared light after said doping process; and
annealing said plurality of semiconductor regions in hydrogen gas, wherein said n-channel type thin film transistors comprising the semiconductor regions containing said n-type impurity and said p-channel type thin film transistors comprising the semiconductor regions containing said n-type and ptype impurities are formed as complementary transistors in a driver circuit portion of said active matrix type display device, and thin film transistors of one of said pchannel type and n-channel type are formed in a pixel portion of said active matrix type display device. - View Dependent Claims (15, 16, 17, 18, 19)
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20. A method for manufacturing an active matrix type display device comprising a plurality of n-channel and p-channel type thin film transistors, said method comprising:
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forming a semiconductor film comprising silicon over a substrate comprising a glass;
crystallizing said semiconductor film by a heat treatment;
patterning said semiconductor film to form semiconductor regions;
doping an n-type impurity by an ion doping process into said semiconductor regions;
forming a mask over a portion of said semiconductor regions;
doping a p-type impurity by an ion doping process into at least one of said semiconductor regions over which said mask is not formed; and
performing a rapid thermal annealing to said semiconductor regions by irradiating a light comprising an infrared light after said doping step, wherein a mask is provided over channel regions of said semiconductor regions so as not to dope said n-type impurity and said p-type impurity into said channel regions, and wherein said n-channel type thin film transistors comprising the semiconductor regions containing said n-type impurity and said p-channel type thin film transistors comprising the semiconductor regions containing said n-type and p-type impurities are formed as complementary transistors in a driver circuit portion of said active matrix type display device, and thin film transistors of one of said p-channel type and n-channel type are formed in a pixel portion of said active matrix type display device. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27)
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28. A method for manufacturing a semiconductor device comprising a plurality of n-channel and p-channel type thin film transistors, said method comprising:
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forming a semiconductor film comprising silicon over a substrate comprising a glass;
crystallizing said semiconductor film by a heat treatment;
patterning said semiconductor film to form semiconductor regions;
doping first impurities into said semiconductor regions, wherein said first impurities comprise an n-type impurity and are doped by an ion doping process;
forming a mask over a portion of said semiconductor regions;
doping second impurities into at least one of said semiconductor regions over which said mask isnot formed, wherein said second impurities comprise a p-type impurity and are doped by an ion doping process;
performing a rapid thermal annealing to said semiconductor regions by irradiating a light comprising an infrared light after said doping process; and
annealing said semiconductor regions in hydrogen gas. - View Dependent Claims (29, 30, 31, 32, 33, 34, 35)
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36. A method for manufacturing a semiconductor device comprising a plurality of n-channel and p-channel type thin film transistors, said method comprising:
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forming a semiconductor film comprising silicon over a substrate comprising a glass;
crystallizing said semiconductor film by a heat treatment;
patterning said semiconductor film to form semiconductor regions;
doping first impurities into said semiconductor regions, wherein said first impurities comprise an n-type impurity and are doped by an ion doping process;
forming a mask over a portion of said semiconductor regions;
doping second impurities into at least one of said semiconductor regions over which said mask is not formed, wherein said second impurities comprise a p-type impurity and are doped by an ion doping process; and
performing a rapid thermal annealing to said semiconductor regions by irradiating a light comprising an infrared light after said doping process, wherein a mask is provided over channel regions of said semiconductor regions so as not to dope said n-type impurity and said p-type impurity into said channel regions. - View Dependent Claims (37, 38, 39, 40, 41, 42, 43, 44)
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45. A method for manufacturing an active matrix type display device comprising a plurality of n-channel and p-channel type thin film transistors, said method comprising:
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forming a semiconductor film comprising silicon over a substrate comprising a glass;
crystallizing said semiconductor film by a heat treatment;
patterning said semiconductor film to form semiconductor regions;
doping an n-type impurity by an ion doping process into said semiconductor regions;
forming a mask over a portion of said semiconductor regions;
doping a p-type impurity by an ion doping process into at least one of said semiconductor regions over which said mask is not formed;
performing a rapid thermal annealing to said n-type impurity and said p-type impurity by irradiating a light comprising an infrared light to said semiconductor regions; and
annealing said semiconductor regions in hydrogen gas, wherein the n-channel thin film transistors comprising the semiconductor regions containing said n-type impurity and the p-channel thin film transistors comprising the semiconductor regions containing said n-type and p-type impurities are formed as complementary transistors in a driver circuit portion of said active matrix type display device, and thin film transistors of one of said p-channel type and n-channel type are formed in a pixel portion of said active matrix type display device. - View Dependent Claims (46, 47, 48, 49, 50, 51)
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52. A method for manufacturing an active matrix type display device comprising a plurality of n-channel and p-channel type thin film transistors, said method comprising:
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forming a semiconductor film comprising silicon over a substrate comprising a glass;
crystallizing said semiconductor film by a heat treatment;
patterning said semiconductor film to form semiconductor regions;
doping an n-type impurity by an ion doping process into said semiconductor regions;
forming a mask over a portion of said semiconductor regions;
doping a p-type impurity by an ion doping process into at least one of said semiconductor regions over which said mask is not formed; and
performing a rapid thermal annealing to said n-type impurity and said p-type impurity by irradiating a light comprising an infrared light to said semiconductor regions, wherein the n-channel thin film transistors comprising the semiconductor regions containing said n-type impurity and the p-channel thin film transistors comprising the semiconductor regions containing said n-type and p-type impurities are formed as complementary transistors in a driver circuit portion of said active matrix type display device, and thin film transistors of one of said p-channel type and n-channel type are formed in a pixel portion of said active matrix type display device, and wherein said p-type impurity is doped more than said n-type impurity. - View Dependent Claims (53, 54, 55, 56, 57, 58)
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59. A method for manufacturing a semiconductor device comprising a plurality of n-channel and p-channel type thin film transistors, said method comprising:
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forming a semiconductor film comprising silicon on an insulating surface comprising a glass;
irradiating a laser light to crystallize said semiconductor film;
patterning said semiconductor film to form semiconductor regions;
forming at least one film over each of said semiconductor regions;
doping first impurities into said semiconductor regions, wherein said first impurities comprise an n-type impurity and are doped by an ion doping process;
forming a mask over a portion of said semiconductor islands; and
doping second impurities into said semiconductor regions over which said mask is not formed, wherein said second impurities comprise p-type impurity and are doped by an ion doping process; and
performing a rapid thermal annealing to said semiconductor regions by irradiating a light comprising an infrared light after said doping process, wherein said p-type impurity is doped more than said n-type impurity. - View Dependent Claims (60, 61, 62, 63, 64, 65)
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66. A method for manufacturing a semiconductor device comprising a plurality of n-channel and p-channel type thin film transistors, said method comprising:
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forming a semiconductor film comprising silicon on an insulating surface comprising a glass;
irradiating a laser light to crystallize said semiconductor film;
patterning said semiconductor film to form semiconductor regions;
forming at least one film over each of said semiconductor regions;
doping first impurities comprising phosphorus into said semiconductor regions by an ion doping process;
forming a mask over a portion of said semiconductor regions;
doping second impurities comprising boron into said semiconductor regions over which said mask is not formed by an ion doping process; and
performing a rapid thermal annealing to said semiconductor regions by irradiating a light comprising an infrared light after said doping process. - View Dependent Claims (67, 68, 69, 70, 71, 72)
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Specification