Electrooptical panel and electronic appliances

• US 6,480,244 B2
• Filed: 05/01/2001
• Issued: 11/12/2002
• Est. Priority Date: 02/09/1998
• Status: Expired due to Term

• Current Assignee: Seiko Epson Corporation (Seiko Group)
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Murade, Masao, Ishii, Kenya
• Primary Examiner(s): Ton, Toan
• Assistant Examiner(s): Qi, Mike
• Application Number:
  US09/845,343
• Publication Number:
  US 20010015778A1
• Time in Patent Office: 560 Days
• Field of Search: 349/43, 349/42, 349/41, 349/38, 349/39, 438/30
• US Class Current: 349/43
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence

Abstract

The present invention provides an electrooptical panel and electronic appliances provided with the electrooptical panel, wherein production yield and a pixel aperture ratio are not decreased even when pixels are made fine in the electrooptical panel using an active matrix addressing method by TFT addressing.

The foregoing problems can be solved by putting a plurality of communication lines into electrical contact with the TFT array substrate via contact holes, wherein a plurality of pixel electrodes addressed using a TFT by the data line and scanning line are provided. A lift-up film is formed under the contact holes formed through an interlayer insulation film to put the drain region of the TFT in electrical contact with the pixel electrode.

Claims

1. An electro-optical apparatus, comprising:

a plurality of data lines;

a plurality of scanning lines intersecting the plurality of data lines;

a plurality of switching elements being disposed in correspondence with intersections of the plurality of data lines and the plurality of scanning lines, one of the plurality of switching elements having a semiconductor layer;

a plurality of pixel electrodes being disposed in correspondence with the plurality of switching elements;

at least one capacitor line extending along one of the plurality of scanning lines, the at least one capacitor line defining at least one first notch, the scanning lines having at least one second notch opposing the at least one first notch;

a contact hole disposed at the at least one first notch and at least one second notch and formed for electrically connecting the semiconductor layer of the one of the plurality of switching elements and one of the plurality of pixel electrodes, the width of the capacitor line being narrower in the notch than the other portion of the capacitor line opposing another capacitor electrode.

2. The electro-optical apparatus according to claim 1, the semiconductor layer of the switching element having a region that overlaps the at least one capacitor electrode.

3. The electro-optical apparatus according to claim 1, one of the plurality of scanning lines and the at least one capacitor electrode being formed of a same layer.

4. The electro-optical apparatus according to claim 1, the one of the plurality of scanning lines defining at least one notch so as to oppose the at least one notch of the at least one capacitor electrode.

5. The electro-optical apparatus according to claim 4, a depth of the at least one notch of the at least one capacitor electrode being deeper than a depth of the at least one notch of the one of the plurality of scanning lines.

6. A projecting apparatus, comprising:

a light source;

the electro-optical device according to 1; and

a projection optical system.

7. An electro-optical apparatus, comprising:

a plurality of data lines;

a plurality of scanning lines intersecting the plurality of data lines;

a plurality of switching elements being disposed in correspondence with intersections of the plurality of data lines and the plurality of scanning lines, one of the plurality of switching elements having a semiconductor layer;

a plurality of pixel electrodes being disposed in correspondence with the plurality of switching elements;

at least one capacitor line extending along one of the plurality of scanning lines, one of the plurality of capacitor lines defining at least one notch which has a rectangular shape; and

a contact hole, at least a part of the contact hole surrounded by the at least one notch of the plurality of capacitor lines that isolate to the at least one notch, and being formed for electrically connecting the semiconductor layer of the one of the plurality of switching elements and one of the plurality of pixel electrodes.

8. The electro-optical apparatus according to claim 7, one of the plurality of scanning lines defining at least one notch being disposed in correspondence with the at least one notch of the capacitor line.