Method for preventing contamination in a plasma process chamber

• US 6,482,331 B2
• Filed: 04/18/2001
• Issued: 11/19/2002
• Est. Priority Date: 04/18/2001
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Lu, Kuo-Liang, Yao, Yung-Chih
• Primary Examiner(s): Mills, Gregory
• Assistant Examiner(s): CROWELL, ANNA M
• Application Number:
  US09/837,125
• Publication Number:
  US 20020153350A1
• Time in Patent Office: 580 Days
• Field of Search: 216/67, 438/710, 156/345.37
• US Class Current: 216/67
• CPC Class Codes: C23C 16/45519 Inert gas curtains
• CPC Class Codes: C23C 16/4557 Heated nozzles
• CPC Class Codes: H01J 2237/022 Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
• CPC Class Codes: H01J 37/32522 Temperature
• CPC Class Codes: H01L 21/67109 mainly by convection
• CPC Class Codes: H01L 21/67115 mainly by radiation

Abstract

A method for preventing contamination in a plasma process chamber when the primary heating means for the chamber is turned off is provided. In the method, a heated gas is flown over the top chamber lid of the plasma process chamber. A suitable heated gas can be nitrogen gas that is heated to a temperature between about 100° C. and about 150° C.

Claims

1. A method for preventing contamination in a plasma process chamber comprising the steps of:

providing a plasma process chamber equipped with heating means and a top chamber wall;

conducting a plasma process in said plasma process chamber and generating contaminating particles adhered to an interior surface of said top chamber wall; and

turning off said heating means and simultaneously flowing a gas heated to at least 100°

C. onto an exterior surface of said top chamber wall for preventing said contaminating particles from falling off said interior surface of the top chamber wall.

2. A method for preventing contamination in a plasma process chamber according to claim 1 further comprising the step of maintaining a temperature inside said plasma process chamber of at least 80°

C.

3. A method for preventing contamination in a plasma process chamber according to claim 1 further comprising the step of providing said heating means in heating lamps.

4. A method for preventing contamination in a plasma process chamber according to claim 1 further comprising the step of providing said top chamber wall in a quartz material.

5. A method for preventing contamination in a plasma process chamber according to claim 1 further comprising the step of flowing a gas heated to a temperature between about 100°

C. and about 150°

C. onto an exterior surface of said top chamber wall.

6. A method for preventing contamination in a plasma process chamber according to claim 1 further comprising the step of flowing nitrogen gas heated to at least 100°

C. onto an exterior surface of said top chamber wall.

7. A method for preventing contamination in a plasma process chamber according to claim 1 further comprising the step of dispersing said gas heated to at least 100°

C. onto an exterior surface of said top chamber wall.

8. A method for preventing contamination in a plasma process chamber according to claim 1 further comprising the step of heating said gas to at least 100°

C. by an electric heating means.

9. A method for preventing contamination in a plasma process chamber according to claim 1 further comprising the step of heating said gas to at least 100°

C. by an electric heating means and sensing said gas temperature by a temperature sensor.

10. A method for preventing contamination in a plasma process chamber according to claim 1 further comprising the step of shutting off said electric heating means when said gas is heated to a temperature higher than 150°

C.