Silicon substrate having a recess for receiving an element, and a method of producing such a recess

• US 6,482,663 B1
• Filed: 07/11/2000
• Issued: 11/19/2002
• Est. Priority Date: 04/27/1995
• Status: Expired due to Term

• Current Assignee: Telefonaktiebolaget LM Ericsson
• Original Assignee: Telefonaktiebolaget LM Ericsson
• Inventors: Bäcklund, Ylva
• Primary Examiner(s): POTTER, ROY KARL
• Application Number:
  US09/613,807
• Time in Patent Office: 861 Days
• Field of Search: 257/727, 257/98, 438/22, 438/25, 438/26, 438/27, 438/29
• US Class Current: 438/25
• CPC Class Codes: G02B 6/255 Splicing of light guides, e.g. by fusion or bonding
• CPC Class Codes: G02B 6/3636 the mechanical coupling means being grooves G02B6/3652 takes precedence
• CPC Class Codes: G02B 6/3652 the additional structures being prepositioning mounting areas, allowing only movement in one dimension, e.g. grooves, trenches or vias in the microbench surface, i.e. self aligning supporting carriers
• CPC Class Codes: G02B 6/3692 with surface micromachining involving etching, e.g. wet or dry etching steps surface micromachining involving subtractive techniques B81C1/00055
• CPC Class Codes: G02B 6/3801 Permanent connections, i.e. wherein fibres are kept aligned by mechanical means splices by bonding G02B6/255; fusion splices G02B6/2551

Abstract

In a silicon substrate a method is described for producing a recess for receiving an element. The method includes masking and etching areas on the substrate on either side of the intended recess, and masking at least one area of less width than the length of the intended recess and which, at least partly, extends over the intended recess to etch out a holding element corresponding to that area for holding an element received in the recess in place. The substrate is of a first doping type, and the masking is produced by doping the substrate with a dopant of a second doping type. The at least one area on the substrate, which, at least partly, extends over the intended recess is doped to a depth corresponding to the desired thickness of the holding element.

Claims

1. A method of producing a recess (2, 2′

, 2″

) in a silicon substrate (1, 1′

, 1″

) for receiving an element, comprising masking areas on the substrate (1, 1′

, 1″

) on either side of the intended recess, and thereafter etching out the recess, characterized by masking also at least one area on the substrate, which, at least partly, extends over the intended recess to etch out a holding element (3, 4, 5) corresponding to that area for holding an element received in the recess in place.

2. A method according to claim 1, in which the substrate is of a first doping type, characterized in that the masking is produced by doping the substrate in said areas with a dopant of a second doping type.

3. A method according to claim 2, characterized in that said at least one area on the substrate, which, at least partly, extends over the intended recess is doped to a depth corresponding to the desired thickness of the holding element.

4. A method of producing a recess in a silicon substrate for receiving an element, comprising the steps of:

masking areas on the substrate on either side of the intended recess, and thereafter etching out the recess, and

masking also at least one area on the substrate, which is of less width than the length of the intended recess and, at least partly, extends over the intended recess to etch out a holding element corresponding to that area for holding an element received in the recess in place.

5. A method according to claim 4, in which the substrate is of a first doping type, and the masking is produced by doping the substrate in said areas with a dopant of a second doping type.

6. A method according to claim 5, wherein the at least one area on the substrate, which, at least partly, extends over the intended recess is doped to a depth corresponding to the desired thickness of the holding element.