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Vertically stacked field programmable nonvolatile memory and method of fabrication

  • US 6,483,736 B2
  • Filed: 08/24/2001
  • Issued: 11/19/2002
  • Est. Priority Date: 11/16/1998
  • Status: Expired due to Term
First Claim
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1. A 3-dimensional memory array built above a substrate, the memory array comprising:

  • N layers of memory cells;

    N+1 layers of conductors;

    said memory cells and conductors fabricated using no more than N+1 masks.

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