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Current driver configuration for MRAM

  • US 6,483,768 B2
  • Filed: 07/03/2001
  • Issued: 11/19/2002
  • Est. Priority Date: 07/03/2000
  • Status: Expired due to Term
First Claim
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1. In combination with an MRAM having a memory cell array with a plurality of memory cells, word lines, and bit lines, the word lines and the bit lines having respective first ends and having respective second ends opposite the respective first ends, the word lines and the bit lines crossing one another at respective crossover points, the memory cells being disposed at the crossover points, a current driver configuration, comprising:

  • drivers assigned to respective ones of the word lines and the bit lines, said drivers being provided at the respective first ends of the word lines and the bit lines;

    said drivers each including a first n-channel field-effect transistor and a current source connected in series to said first n-channel field-effect transistor; and

    series circuits provided at the respective second ends of the word lines and the bit lines such that said series circuits are connected between the respective second ends of the word lines and the bit lines and ground, said series circuits each including a second n-channel field-effect transistor and a voltage source.

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