Substrate processing apparatus and semiconductor device producing method

• US 6,483,989 B1
• Filed: 11/08/2001
• Issued: 11/19/2002
• Est. Priority Date: 11/21/2000
• Status: Active Grant

• Current Assignee: Hitachi Kokusai Electric Incorporated (Hitachi, Ltd.)
• Original Assignee: Hitachi Kokusai Electric Incorporated (Hitachi, Ltd.)
• Inventors: Okada, Satoshi, Nishitani, Eisuke, Kasanami, Katsuhisa, Nishiwaki, Michiko
• Primary Examiner(s): Walberg, Teresa
• Assistant Examiner(s): Fuqua, Shawntina T.
• Application Number:
  US10/035,809
• Publication Number:
  US 20020160560A1
• Time in Patent Office: 376 Days
• Field of Search: 219/390, 219/405, 219/411, 219/444.1, 392/416, 392/418, 118/724, 118/725, 118/728, 118/729, 118/730, 118/50.1
• US Class Current: 392/418
• CPC Class Codes: H01L 21/67109 mainly by convection

Abstract

A substrate processing apparatus is disclosed for heating a substrate by a heater through a susceptor in a state in which the substrate is placed on the susceptor, to process the substrate. The heater is divided into a plurality of respectively controlled zone heaters to form gaps therebetween, a center position of a gap of the gaps which is positioned closer to an end of the substrate than any other gap is located in a range from an inner side 10 mm to an outer side 6 mm in a radial direction of the substrate with respect to the end of the substrate.

Claims

1. A substrate processing apparatus for heating a substrate by a heater through a susceptor in a state in which said substrate is placed on said susceptor, thereby processing said substrate, wherein

said heater is divided into a plurality of respectively controlled zone heaters to form gaps therebetween, a center position of a gap of said gaps which is positioned closer to an end of said substrate than any other gap is located in a range from an inner side 10 mm to an outer side 6 mm in a radial direction of said substrate with respect to the end of said substrate.

2. A substrate processing apparatus as recited in claim 1, wherein

the center position of the gap is located in a range of an inner side 5 mm to the end of said substrate in the radial direction of said substrate with respect to the end of said substrate.

3. A substrate processing apparatus as recited in claim 1, wherein

the center position of the gap is located at the end of said substrate.

4. A substrate processing apparatus as recited in claim 1, wherein

said susceptor is divided into a plurality of divided susceptors, and divided ends of said zone heaters are respectively located in a range of 5 to 10 mm from the divided ends on the substrate side of the respectively corresponding divided susceptors.

5. A substrate processing apparatus as recited in claim 1, wherein

said divided susceptors have an outer peripheral susceptor which is to be located at an outer periphery of said substrate, and a member made of quartz is provided on or above said outer peripheral susceptor.

6. A producing method of a semiconductor device, comprising a step of heating a substrate by a heater through a susceptor in a state in which said substrate is placed on said susceptor, thereby processing said substrate, wherein

said heater is divided into a plurality of respectively controlled zone heaters to form gaps therebetween, a center position of a gap of said gaps which is positioned closer to an end of said substrate than any other gap is located in a range from an inner side 10 mm to an outer side 6 mm in a radial direction of said substrate with respect to the end of said substrate.

7. A substrate processing apparatus for heating a substrate by a heater through a susceptor in a state in which said substrate is placed on said susceptor, thereby processing said substrate, wherein

said heater is divided into a plurality of respectively controlled zone heaters to form gaps therebetween, said susceptor is divided into a plurality of divided susceptors, and divided ends of said zone heaters are respectively located in a range of 5 to 10 mm from the divided ends on the substrate side of the respectively corresponding divided susceptors.