Gas distribution system for a CVD processing chamber
First Claim
1. A method for depositing a film on a substrate in a chemical vapor deposition chamber, comprising:
- a) introducing a first reactant gas through a first gas inlet at a first distance from an interior surface of the chamber;
b) introducing a second reactant gas through a second gas inlet at a second distance from the interior surface of the chamber, wherein the second reactant gas creates a higher partial pressure adjacent the interior surface of the chamber to prevent deposition from the first reactant gas on the interior surface; and
c) generating a plasma of the processing gases.
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Accused Products
Abstract
The present invention provides an apparatus for depositing a film on a substrate comprising a processing chamber, a substrate support member disposed within the chamber, a first gas inlet, a second gas inlet, a plasma generator and a gas exhaust. The first gas inlet provides a first gas at a first distance from an interior surface of the chamber, and the second gas inlet provides a second gas at a second distance that is closer than the first distance from the interior surface of the chamber. Thus, the second gas creates a higher partial pressure adjacent the interior surface of the chamber to significantly reduce deposition from the first gas onto the interior surface. The present invention also provides a method for depositing a FSG film on a substrate comprising: introducing first gas through a first gas inlet at a first distance from an interior surface of the chamber, and introducing a second gas through a second gas inlet at a second distance from the interior surface of the chamber, wherein the second gas creates a higher partial pressure adjacent the interior surface of the chamber to prevent deposition from the first gas on the interior surface. Alternatively, the first gas is introduced at a different angle from the second gas with respect to a substrate surface.
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Citations
51 Claims
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1. A method for depositing a film on a substrate in a chemical vapor deposition chamber, comprising:
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a) introducing a first reactant gas through a first gas inlet at a first distance from an interior surface of the chamber;
b) introducing a second reactant gas through a second gas inlet at a second distance from the interior surface of the chamber, wherein the second reactant gas creates a higher partial pressure adjacent the interior surface of the chamber to prevent deposition from the first reactant gas on the interior surface; and
c) generating a plasma of the processing gases. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
d) coating the interior surface of the chamber with a seasoning coat before step a).
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3. The method of claim 1, wherein a ratio of the second distance to the first distance is between about 0.24 and about 0.85.
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4. The method of claim 1, wherein the first reactant gas is introduced at a different angle from the second reactant gas with respect to a substrate surface.
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5. The method of claim 4, wherein the second reactant gas is introduced at an angle toward the dome of the deposition chamber.
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6. The method of claim 4, wherein the first reactant gas is introduced at an angle toward the substrate.
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7. The method of claim 1, wherein the first reactant gas comprises a silicon-containing gas and the second reactant gas comprises an oxygen-containing gas.
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8. The method of claim 7, wherein the first reactant gas further comprises a fluorine-containing gas.
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9. The method of claim 8, wherein the first reactant gas further comprises an inert gas.
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10. The method of claim 9, wherein the silicon-containing gas comprises SiH4, the fluorine-containing gas comprises SiF4, the inert gas comprises argon, and the oxygen-containing gas comprises oxygen.
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11. The method of claim 1, wherein the first reactant gas comprises a fluorine-containing gas and the second reactant gas comprises a silicon-containing gas.
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12. The method of claim 11, wherein the first reactant gas further comprises an oxygen-containing gas.
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13. The method of claim 12, wherein the second reactant gas further comprises an inert gas.
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14. The method of claim 13, wherein the fluorine-containing gas comprises SiF4, the silicon-containing gas comprises SiH4, the oxygen-containing gas comprises oxygen, and the inert gas comprises argon.
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15. A method for depositing a film onto a substrate within a deposition chamber, comprising:
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injecting a first process gas comprising a silicon-containing gas and a fluorine-containing gas into the chamber through a plurality of first nozzles surrounding the substrate; and
injecting a second process gas comprising an oxygen-containing gas into the chamber through a plurality of second nozzles surrounding the substrate;
wherein the plurality of second nozzles inject the second process gases closer to an interior surface of the chamber than the plurality of first nozzles inject the first process gas. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
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30. A method for distributing processing gases in a processing chamber, comprising:
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a) introducing a first gas comprising a fluorine-containing gas through a first gas inlet at a first distance from an interior surface of the chamber; and
b) introducing a second gas through a second gas inlet at a second distance from the interior surface of the chamber, wherein the second gas creates a higher partial pressure adjacent the interior surface of the chamber to prevent deposition from the first gas on the interior surface. - View Dependent Claims (31, 32, 33, 34, 35, 36, 37, 38, 39, 40)
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41. A method for distributing processing gases in a processing chamber, comprising:
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a) introducing a first gas through a first gas inlet; and
b) introducing at an angle toward the dome of the deposition chamber a second gas through a second gas inlet, wherein the second gas creates a higher partial pressure adjacent the interior surface of the dome of the deposition chamber to prevent deposition from the first gas on the interior surface.
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42. A method for depositing a film over a substrate in a chemical vapor deposition chamber, comprising:
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step for creating a higher partial pressure of a second reactant gas in relation to a first reactant gas comprising a fluorine-containing gas adjacent an interior surface of the chamber to prevent deposition of the first reactant gas on the interior surface; and
step for depositing material from the first gas and the second gas to form the film over the substrate. - View Dependent Claims (43, 44, 45, 46, 47, 48, 49, 50, 51)
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Specification