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Gas distribution system for a CVD processing chamber

  • US 6,486,081 B1
  • Filed: 11/24/1999
  • Issued: 11/26/2002
  • Est. Priority Date: 11/13/1998
  • Status: Expired due to Term
First Claim
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1. A method for depositing a film on a substrate in a chemical vapor deposition chamber, comprising:

  • a) introducing a first reactant gas through a first gas inlet at a first distance from an interior surface of the chamber;

    b) introducing a second reactant gas through a second gas inlet at a second distance from the interior surface of the chamber, wherein the second reactant gas creates a higher partial pressure adjacent the interior surface of the chamber to prevent deposition from the first reactant gas on the interior surface; and

    c) generating a plasma of the processing gases.

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