Transistor

• US 6,486,489 B2
• Filed: 11/19/2001
• Issued: 11/26/2002
• Est. Priority Date: 03/16/2001
• Status: Expired due to Term

• Current Assignee: Fuji Xerox Company Limited (Xerox Holdings Corp.)
• Original Assignee: Fuji Xerox Company Limited (Xerox Holdings Corp.)
• Inventors: Shimotani, Kei, Watanabe, Hiroyuki, Manabe, Chikara, Shimizu, Masaaki, Shigematsu, Taishi
• Primary Examiner(s): Ho, Hoai
• Assistant Examiner(s): Tran, Long K.
• Application Number:
  US09/988,146
• Publication Number:
  US 20020130333A1
• Time in Patent Office: 372 Days
• Field of Search: 257/9, 257/216, 257/218, 257/255, 257/297, 257/373, 205/122, 205/157, 205/162, 205/164
• US Class Current: 257/9
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: G11C 13/0014 comprising cells based on organic memory material
• CPC Class Codes: G11C 13/0019 comprising bio-molecules
• CPC Class Codes: G11C 2213/17 Memory cell being a nanowire transistor
• CPC Class Codes: H10K 10/46 Field-effect transistors, e.g. organic thin-film transistors [OTFT] H10K10/43 takes precedence
• CPC Class Codes: H10K 85/761 Biomolecules or bio-macromolecules, e.g. proteins, chlorophyl, lipids or enzymes
• CPC Class Codes: Y10S 977/936 in a transistor or 3-terminal device

Abstract

There is provided a transistor, which includes a deoxyribonucleic acid molecule or a deoxyribonucleic acid molecule aggregate as a part of structural materials, has a source electrode member, a drain electrode member and a gate electrode member, in which at least one of three electrode members connects to the deoxyribonucleic acid molecule or deoxyribonucleic acid molecule aggregate.

Claims

1. A transistor comprising:

a source electrode member;

a drain electrode member;

a gate electrode member; and

a deoxyribonucleic acid molecule or a deoxyribonucleic acid molecule aggregate;

wherein at least one of said source electrode member, said drain electrode member and said gate electrode member connects to said deoxyribonucleic acid molecule or deoxyribonucleic acid molecule aggregate.

2. The transistor according to claim 1, wherein said deoxyribonucleic acid molecule or deoxyribonucleic acid molecule aggregate acts as a carrier transporting material.

3. The transistor according to claim 2, wherein said electrode members are rod-like shape, and wherein said source electrode member, said gate electrode member and said drain electrode member are arranged in that order in a longitudinal direction of connects of said deoxyribonucleic acid molecule or deoxyribonucleic acid molecule aggregate.

4. The transistor according to claim 3, wherein said gate electrode member has a portion connecting to said deoxyribonucleic acid molecule or deoxyribonucleic acid molecule aggregate, the portion having a width from 0.1 nm to 100 nm.

5. The transistor according to claim 3, wherein a gap between a point where said source electrode member connects to said deoxyribonucleic acid molecule or deoxyribonucleic acid molecule aggregate and a point where said drain electrode member connects to said deoxyribonucleic acid molecule or deoxyribonucleic acid molecule aggregate is 1 nm to 100 nm.

6. The transistor according to claim 2, wherein said deoxyribonucleic acid molecule or deoxyribonucleic acid molecule aggregate has a length of 2 nm to 10 μ

m.

7. The transistor according to claim 2, wherein said deoxyribonucleic acid molecule or deoxyribonucleic acid molecule aggregate has 10 or less molecules, and is thread-like or bundle-like.

8. The transistor according to claim 2 which functions as a single electron tunneling transistor.

9. The transistor according to claim 1, wherein said deoxyribonucleic acid molecule or deoxyribonucleic acid molecule aggregate is in a form of mass and connects to said gate electrode member, and acts as an insulating material.

10. The transistor according to claim 9 wherein said deoxyribonucleic acid molecule or deoxyribonucleic acid molecule aggregate is disposed so as to contact a carrier transporting material, said gate electrode member connects to said deoxyribonucleic acid molecule or deoxyribonucleic acid molecule aggregate but does not contact said carrier transporting material, and said source electrode member and said drain electrode member sandwich said deoxyribonucleic acid molecule or deoxyribonucleic acid molecule aggregate and connects to aid carrier transporting material.

11. The transistor according to claim 10, wherein a gap between a point where said source electrode member which connects to said carrier transporting material and a point where said drain electrode member which connects to said carrier transporting material is 1 nm to 1 μ

m.

12. The transistor according to claim 10, wherein said carrier transporting material is a carbon nanotube.

13. The transistor according to claim 9, wherein a thickness of said mass of said deoxyribonucleic acid molecules or deoxyribonucleic acid molecule aggregate is 2 nm to 100 nm.

14. The transistor according to claim 1, wherein the number of bases composing said deoxyribonucleic acid molecule or a deoxyribonucleic acid molecule of said deoxyribonucleic acid molecule aggregate is 2 to 100,000.

15. The transistor according to claim 1, wherein said gate electrode is a carbon nanotube.

16. The transistor according to claim 1, wherein said source electrode and/or said drain electrode is a carbon nanotube.