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Integration of anodized metal capacitors and high temperature deposition capacitors

  • US 6,486,530 B1
  • Filed: 10/16/2000
  • Issued: 11/26/2002
  • Est. Priority Date: 10/16/2000
  • Status: Expired due to Fees
First Claim
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1. An integrated device comprising:

  • a first capacitor of a first type;

    a second capacitor of a second type; and

    a protective conductive metal layer disposed between a dielectric layer of the first capacitor and a dielectric layer of the second capacitor, the protective conductive metal layer helping to prevent process chemicals and conditions used to fabricate the dielectric layer of the second capacitor from adversely affecting the dielectric layer of the first capacitor.

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