Integration of anodized metal capacitors and high temperature deposition capacitors

• US 6,486,530 B1
• Filed: 10/16/2000
• Issued: 11/26/2002
• Est. Priority Date: 10/16/2000
• Status: Expired due to Fees

• Current Assignee: Intarsia Corp. (Dow, Inc.)
• Original Assignee: Intarsia Corp. (Dow, Inc.)
• Inventors: Arbuckle, Brian W., Sasagawa, Teruo
• Primary Examiner(s): Flynn, Nathan J.
• Assistant Examiner(s): FORDE, REMMON R
• Application Number:
  US09/690,174
• Time in Patent Office: 771 Days
• Field of Search: 257/532, 257/535, 257/640, 257/642, 257/649, 257/751, 257/753, 257/762-767, 257/503, 257/307, 257/308, 257/43, 438/393, 438/396-399
• US Class Current: 257/532
• CPC Class Codes: H01L 27/0805 Capacitors only
• CPC Class Codes: H01L 28/40 Capacitors

Abstract

An integrated passive component device in which an anodized metal capacitor and a HTD capacitor are fabricated with a protective conductive metal layer disposed between the dielectric layer of the anodized metal capacitor and the dielectric layer of the HTD capacitor. The protective conductive metal layer helps to prevent process chemicals and conditions used to fabricate the dielectric layer of the HTD capacitor from adversely affecting the dielectric layer of the anodized metal capacitor. The anodized metal capacitor and the high temperature deposition capacitor are fabricated on the same substrate using only one masking operation.

Claims

1. An integrated device comprising:

a first capacitor of a first type;

a second capacitor of a second type; and

a protective conductive metal layer disposed between a dielectric layer of the first capacitor and a dielectric layer of the second capacitor, the protective conductive metal layer helping to prevent process chemicals and conditions used to fabricate the dielectric layer of the second capacitor from adversely affecting the dielectric layer of the first capacitor.

2. The integrated device of claim 1, wherein the dielectric layer of the first capacitor comprises the same material as the dielectric layer of the second capacitor, and wherein the dielectric layer of the first capacitor has a different thickness than the dielectric layer of the second capacitor.

3. The integrated device of claim 1, wherein the dielectric layer of the first capacitor comprises a different material than the dielectric layer of the second capacitor.

4. The integrated device of claim 1, wherein the first capacitor is an anodized metal capacitor.

5. The integrated device of claim 4, wherein the second capacitor is a high temperature deposition capacitor.

6. The integrated device of claim 1, further comprising:

a third capacitor, of a third type; and

a conductive metal layer disposed between a dielectric layer of the second capacitor and a dielectric layer of the third capacitor, the conductive metal layer helping to prevent hillocking of an underlying layer of the device or contamination from adversely affecting the fabrication of a dielectric layer of the third capacitor.

7. The integrated device of claim 5, wherein the dielectric layer of the first capacitor is a layer of aluminum oxide approximately 0.15 microns thick.

8. The integrated device of claim 5, wherein the protective conductive metal layer is a material selected from the group consisting essentially of aluminum, copper, gold, molybdenum, silver, tantalum, titanium, tungsten, and alloys thereof.

9. The integrated device of claim 5, wherein the dielectric layer of the second capacitor is a material selected from the group consisting essentially of BCB, Avatrel™

hydrocarbon, and polyimide.

10. The integrated device of claim 5, wherein the dielectric layer of the second capacitor is a material selected from the group consisting essentially of silicon nitride, silicon dioxide, silicon oxy-nitride, aluminum oxide, tantalum oxide, titanium oxide, and the multi-layer of these materials.

11. The integrated device of claim 6, wherein the second capacitor is a high temperature deposition capacitor and the third capacitor is a high temperature deposition capacitor, the thickness of the dielectric layer of the third capacitor being different from the thickness of the dielectric layer of the second capacitor.

12. The integrated device of claim 6, wherein the second capacitor is a high temperature deposition capacitor and the third capacitor is a high temperature deposition capacitor, having a dielectric layer comprising a material different than the dielectric layer of the second capacitor.

13. The integrated device of claim 5, wherein the dielectric layer of the second capacitor is a layer of silicon nitride approximately 0.65 microns thick.

14. The integrated device of claim 5, wherein the dielectric layer of the second capacitor is a layer of BCB approximately 1-5 microns thick.

15. The integrated device of claim 5, wherein the protective conductive metal layer is a layer of aluminum approximately 0.1 microns thick.

16. A multi-layered structure for an integrated device comprising:

an anodized metal layer;

a dielectric film layer; and

a protective conductive metal layer disposed between the anodized metal layer and the dielectric film layer, the protective conductive metal layer helping to protect the anodized metal layer from process chemicals and conditions used to fabricate the dielectric film layer.

17. The multi-layered structure of claim 16, wherein the process chemicals and conditions include a reactive ion etching process.

18. The multi-layered structure of claim 16, wherein the integrated device contains passive components.

19. The multi-layered structure of claim 16, wherein the integrated device contains active components.

20. The multi-layered structure of claim 16, wherein the integrated device contains passive and active components.

21. The multi-layered structure of claim 16, wherein the anodized metal layer is a dielectric layer of an anodized metal capacitor and the dielectric film layer is a dielectric layer of a high temperature deposition capacitor.

22. The multi-layered structure of claim 16, wherein the dielectric film layer is a material selected from the group consisting essentially of BCB, Avatrel™

hydrocarbon, and polyimide.

23. The multi-layered structure of claim 16, wherein the dielectric film layer is a material selected from the group consisting essentially of silicon nitride, silicon oxide, silicon oxy-nitride, aluminum oxide, tantalum oxide, titanium oxide, and the multi-layer of these materials.

24. The multi-layered structure of claim 16, wherein the dielectric film layer is a layer of silicon nitride approximately 0.65 microns thick.

25. The multi-layered structure of claim 16, wherein the dielectric film layer is a layer of BCB approximately 1-5 microns thick.

26. The multi-layered structure of claim 16, wherein the anodized metal layer is a layer of aluminum oxide approximately 0.15 microns thick.

27. The multi-layered structure of claim 16, wherein the protective conductive metal layer is a material selected from the group consisting essentially of aluminum, copper, gold, molybdenum, silver, tandalum, titanium, tungsten, and alloys thereof.

28. The multi-layered structure of claim 16, wherein the protective conductive metal layer is a layer of aluminum approximately 0.1 microns thick.

29. An integrated device comprising:

a substrate;

a conductive metal layer deposited upon the substrate;

an anodized metal layer formed upon the conductive metal layer;

a protective conductive metal layer deposited upon the anodized metal layer; and

a dielectric film layer deposited upon the protective conductive metal layer, the protective conductive metal layer helping to protect the anodized metal layer from process chemicals and conditions associated with the deposition of the dielectric film layer.

30. The integrated device of claim 29, wherein the conductive metal layer is deposited by a sputtering process.

31. The integrated device method of claim 29, wherein process chemicals and conditions are chemicals and conditions associated with a reactive ion etching process.

32. The integrated device of claim 29, wherein the integrated device contains passive components.

33. The integrated device of claim 29, wherein the integrated device contains active components.

34. The integrated device of claim 29, wherein the integrated device contains passive and active components.

35. The integrated device of claim 29, wherein the anodized metal layer is a dielectric layer of an anodized metal capacitor and the dielectric film layer is a dielectric layer of a high temperature deposition capacitor.

36. The integrated device of claim 29, wherein the dielectric film layer is a material selected from the group consisting essentially of BCB, Avatrel™

hydrocarbon, and polyimide.

37. The integrated device of claim 29, wherein the dielectric film layer is a material selected from the group consisting essentially of silicon nitride, silicon oxide, silicon oxy-nitride, aluminum oxide, tantalum oxide, titanium oxide, and the multi-layer of these materials.

38. The integrated device of claim 29, wherein the dielectric film layer is a layer of silicon nitride approximately 0.65 microns thick.

39. The integrated device of claim 29, wherein the dielectric film layer is a layer of BCB approximately 5.4 microns thick.

40. The integrated device of claim 29, wherein the anodized metal layer is a layer of aluminum oxide approximately 0.15 microns thick.

41. The integrated device of claim 29, wherein the protective conductive metal layer is a material selected from the group consisting essentially of aluminum, copper, gold, molybdenum, silver, tantalum, titanium, tungsten, and alloys thereof.

42. The integrated device of claim 29, wherein the protective conductive metal layer is a layer of aluminum approximately 0.1 microns thick.

43. An integrated component device comprising:

a substrate;

a first conductive metal layer deposited upon the substrate;

a dielectric film layer deposited upon the first conductive metal layer; and

an anodized metal layer formed upon a second conductive metal layer, the second conductive metal layer disposed between the dielectric film layer and the anodized metal layer, the second conductive layer helping to prevent hillocking or contamination of the first conductive metal layer from adversely affecting the formation of the anodized layer upon the second conductive layer.

44. The integrated device of claim 43, wherein the second conductive metal layer is a multilayer of metal having an anodizable metal layer.