Electrically tunable low secondary electron emission diamond-like coatings and process for depositing coatings

• US 6,486,597 B1
• Filed: 10/21/1999
• Issued: 11/26/2002
• Est. Priority Date: 05/09/1997
• Status: Expired due to Term

• Current Assignee: Sulzer Metaplas GmbH
• Original Assignee: NV Bekaert SA
• Inventors: Swab, Philip, Goel, Arvind, Outten, Craig Anthony, Venkatraman, Chandra
• Primary Examiner(s): Ramsey, Kenneth J.
• Application Number:
  US09/422,630
• Time in Patent Office: 1,132 Days
• Field of Search: 313/422, 313/495-497, 445/24, 445/58
• US Class Current: 313/422
• CPC Class Codes: H01J 2329/88 Coatings on walls of the vessels H01J2329/18, H01J2329/868, H01J2329/89 take precedence
• CPC Class Codes: H01J 31/127 using large area or array sources, i.e. essentially a source for each pixel group
• CPC Class Codes: H01J 9/146 Surface treatment, e.g. blackening, coating H01J9/144 takes precedence
• CPC Class Codes: H01J 9/20 Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
• CPC Class Codes: Y10S 977/891 Vapor phase deposition
• CPC Class Codes: Y10S 977/892 Liquid phase deposition
• CPC Class Codes: Y10S 977/939 Electron emitter, e.g. spindt emitter tip coated with nanoparticles

Abstract

A diamond-like carbon-containing material useful as a coating for electronic devices including field emission devices and color television tubes, the coatings having both low secondary electron emission coefficients of less than unity and electrical resistivity tunable over a range of from about 10e⁻² to about 10e¹⁶.

Claims

1. An electrical device comprising a substrate and coating, said coating comprising carbon and silicon, and having a secondary electron emission coefficient less than about one.

2. A method of improving the performance of an electrical device comprising:

providing an electrical device comprising an electron source, an electron target and a passive element;

positioning the source, the target and the passive element so that electrons from the source may impinge on the passive element, and secondary electrons emitted from the passive element impinge on the target; and

depositing on the passive element a coating comprising carbon and silicon on a surface of the passive element for reducing the secondary electron emission coefficient of the surface to less than about one.

3. The method according to claim 2, further comprising depositing the coating on the target.

4. The method according to claim 2, wherein the coating has a thickness of from about 0.02 to about 0.15 microns.

5. The method according to claim 2, wherein the source comprises an electron gun.

6. The method according to claim 2, wherein the target comprises an electroluminescent screen.

7. The method according to claim 2, wherein the passive element comprises a spacer disposed between the source and the target.

8. The method according to claim 2, wherein the secondary electron emission coefficient is from about 1.0 to about 0.45.

9. The method according to claim 2, wherein the secondary electron emission coefficient is from about 0.90 to about 0.45.

10. The method according to claim 2, wherein the secondary electron emission coefficient is from about 0.9 to about 0.8.

11. The method according to claim 2, wherein the coating has a tunable electrical resistivity range over a range of from about 10⁻

2 to about 10¹⁶ ohm-cm.

12. The method according to claim 2, wherein the coating has a tunable electrical resistivity range over a range of from about 10⁶ to about 10¹⁰ ohm-cm.

13. The method according to claim 2, wherein the coating comprises a diamond-like carbon-containing material comprising carbon, hydrogen, silicon and oxygen.

14. The method according to claim 13, wherein the carbon, silicon, hydrogen and oxygen are obtained from the decomposition of an organosiloxane having from about 1 to about 10 silicon atoms.

15. The method according to claim 14, wherein the organosiloxane is a polyphenylmethylsiloxane.

16. The method according to claim 2, wherein the coating further comprises dopant elements or dopant compounds containing elements from Groups 1-7b of the periodic table.

17. The method according to claim 16, wherein the dopant elements are selected from the group consisting of Ti, Zr, Cr, Re, Hf, Cu, Al, N, Ag, and Au.

18. The method according to claim 2, wherein the carbon to silicon atomic ratio of the coating is from about 2:

1 to about 8;

1.

19. The method according to claim 2, wherein the silicon to oxygen atomic ratio of the coating is from about 0.5:

1 to about 3;

1.