Precision programming of nonvolatile memory cells
First Claim
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1. An integrated circuit memory system comprising:
- a control block controlling operations of said integrated circuit memory system;
a plurality of memory cells, each memory cell comprising;
a source, drain, control gate and floating gate, said floating gate capable of storing electric charge, said memory cells programmable by hot carrier injection of electric charge to said floating gate corresponding to input signals to said integrated circuit memory system; and
circuit means, responsive to said control block, for applying preselected voltages to said source, drain and control gate of selected memory cell in a set of timed relationships and for providing a constant current independently of said input signals, said current flowing between said source and drain of said selected memory cell to determine an amount of charge stored in said floating gate of said selected memory cell to read signals corresponding to said stored amount of charge.
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Abstract
An integrated circuit memory system and method for precision hot carrier injection programming of single or plurality of nonvolatile memory cells is described. Each program cycle is followed by a verify cycle. Precision programming is achieved by incrementally changing a programming current pulse flowing between the source and drain in the memory cell during successive program cycles and a constant current during successive verify cycles. Current control and voltage mode sensing circuitry reduces circuit complexity, reduces programming cell current, lowers power dissipation, and enables page mode operation. Precision programming is useful for multilevel digital and analog information storage.
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Citations
8 Claims
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1. An integrated circuit memory system comprising:
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a control block controlling operations of said integrated circuit memory system;
a plurality of memory cells, each memory cell comprising;
a source, drain, control gate and floating gate, said floating gate capable of storing electric charge, said memory cells programmable by hot carrier injection of electric charge to said floating gate corresponding to input signals to said integrated circuit memory system; and
circuit means, responsive to said control block, for applying preselected voltages to said source, drain and control gate of selected memory cell in a set of timed relationships and for providing a constant current independently of said input signals, said current flowing between said source and drain of said selected memory cell to determine an amount of charge stored in said floating gate of said selected memory cell to read signals corresponding to said stored amount of charge. - View Dependent Claims (2, 3, 4)
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5. In an integrated circuit memory system having a plurality of memory cells, each memory cell comprising a source, drain, control gate and floating gate, said floating gate capable of storing electric charge, said memory cells programmable by hot carrier injection corresponding to input signals to said integrated circuit memory system, a method for reading said memory cells comprising:
applying voltages to said source, drain and control gate of a selected memory cell in a set of timed relationships and providing a constant current independently of said input signals, said constant current flowing between said source and drain of said selected memory cell to determine an amount of electric charge stored on said floating gate of said selected memory cell to read signals corresponding to said amount of charge. - View Dependent Claims (6, 7, 8)
Specification
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Current AssigneeSilicon Storage Technology Incorporated (Microchip Technology Incorporated)
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Original AssigneeSilicon Storage Technology Incorporated (Microchip Technology Incorporated)
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InventorsKorsh, George J., Khan, Sakhawat M.
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Primary Examiner(s)HO, HOAI V
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Application NumberUS09/909,817Publication NumberTime in Patent Office494 DaysField of Search365/185.11, 365/185.18, 365/185.28, 365/185.01US Class Current365/185.11CPC Class CodesG11C 11/5621 using charge storage in a f...G11C 11/5628 Programming or writing circ...G11C 11/5642 Sensing or reading circuits...G11C 16/12 Programming voltage switchi...G11C 16/3468 Prevention of overerasure o...G11C 27/005 with non-volatile charge st...
