Vertical cavity apparatus with tunnel junction
First Claim
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1. A vertical cavity apparatus, comprising:
- a first mirror;
a substrate;
a second mirror coupled to the substrate;
at least a first and a second active region each positioned between the first and second mirrors, each of the first and second active regions being made of a material that upon application of electrical or electromagnetic energy the first and second regions become optically active;
a first ion implantation layer positioned between the first and second mirrors; and
a first tunnel junction positioned between the first and second mirrors.
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Abstract
A vertical cavity apparatus includes a first mirror, a substrate and a second mirror coupled to the substrate. At least a first and a second active region are each positioned between the first and second mirrors. At least a first ion implantation layer is positioned between the first and second mirrors. At least a first tunnel junction is positioned between the first and second mirrors.
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Citations
101 Claims
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1. A vertical cavity apparatus, comprising:
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a first mirror;
a substrate;
a second mirror coupled to the substrate;
at least a first and a second active region each positioned between the first and second mirrors, each of the first and second active regions being made of a material that upon application of electrical or electromagnetic energy the first and second regions become optically active;
a first ion implantation layer positioned between the first and second mirrors; and
a first tunnel junction positioned between the first and second mirrors. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75, 76, 77, 78, 79, 80, 81, 82, 83, 84, 85, 86, 87, 88, 89, 90, 91, 92, 93, 94, 95, 96)
at least a first oxide layer positioned between the first and second mirrors.
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3. The apparatus of claim 2, wherein the first oxide layer is positioned between the first mirror and the first active region.
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4. The apparatus of claim 2, wherein the first oxide layer is positioned between the second mirror and the second active region.
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5. The apparatus of claim 1, wherein the first tunnel junction is positioned between the first and second active regions.
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6. The apparatus of claim 1, wherein the substrate has a given crystallographic orientation.
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7. The apparatus of claim 1, wherein the first mirror includes a metallic layer.
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8. The apparatus of claim 1, wherein the substrate has a etched pattern formed on a top or a bottom surface.
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9. The apparatus of claim 1, wherein the substrate includes an epitaxy structure.
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10. The apparatus of claim 1, wherein the substrate includes a dielectric pattern for selective area epitaxy.
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11. The apparatus of claim 1, wherein substantially the entire apparatus is grown on a planar substrate with at least one layer grown while the planar substrate is held stationary and the other layers are grown while the planar substrate is rotated.
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12. The apparatus of claim 1, wherein the first mirror is tunable.
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13. The apparatus of claim 1, wherein the first mirror includes a tunable filter.
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14. The apparatus of claim 1, further comprising:
a tunable filter coupled to the first mirror.
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15. The apparatus of claim 1, wherein the tunnel junction has first and second opposing sides that are made of the same material.
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16. The apparatus of claim 1, wherein the tunnel junction has first and second opposing sides that are made of different materials.
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17. The apparatus of claim 1, wherein the tunnel junction has first and second opposing sides each having a different thickness.
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18. The apparatus of claim 1, wherein the tunnel junction has first and second opposing sides each having a different doping profile.
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19. The apparatus of claim 1, wherein the tunnel junction is substantially uniformly doped.
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20. The apparatus of claim 1, wherein the tunnel junction is non-uniformly doped.
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21. The apparatus of claim 1, wherein the tunnel junction is a compositionally graded tunnel junction.
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22. The apparatus of claim 1, wherein the first active region includes a first quantum well.
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23. The apparatus of claim 1, wherein the first active region includes a plurality of first quantum wells.
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24. The apparatus of claim 23, wherein at least a portion of the plurality of first quantum wells have different widths.
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25. The apparatus of claim 23, wherein at least a portion of the plurality of first quantum wells have the same widths.
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26. The apparatus of claim 23, wherein at least a portion of the plurality of first quantum wells have different maximum gain wavelength.
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27. The apparatus of claim 23, wherein at least a portion of the plurality of first quantum wells have the same maximum gain wavelength.
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28. The apparatus of claim 23, wherein at least a portion of individual quantum wells of the plurality of first quantum wells have different compositions.
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29. The apparatus of claim 23, wherein at least a portion of individual quantum wells of the plurality of first quantum wells have the same composition.
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30. The apparatus of claim 23, wherein at least a portion of individual quantum wells of the plurality of first quantum wells have the same strain.
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31. The apparatus of claim 23, wherein at least a portion of individual quantum wells of the plurality of first quantum wells have different strain.
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32. The apparatus of claim 23, wherein the plurality of first quantum wells has a plurality of barriers and at least a portion of barriers in the plurality have the same strain.
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33. The apparatus of claim 23, wherein the plurality of first quantum wells has a plurality of barriers and at least a portion of barriers in the plurality have different strains.
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34. The apparatus of claim 23, wherein the plurality of first quantum wells has a plurality of barriers and at least a portion of barriers in the plurality are unstrained.
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35. The apparatus of claim 23, wherein the second active region includes a second quantum well.
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36. The apparatus of claim 35, wherein the second active region includes a plurality of second quantum wells.
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37. The apparatus of claim 36, wherein at least a portion of the plurality of second quantum wells have different widths.
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38. The apparatus of claim 36, wherein at least a portion of the plurality of second quantum wells have the same widths.
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39. The apparatus of claim 36, wherein at least a portion of the plurality of second quantum wells have different maximum gain wavelength.
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40. The apparatus of claim 36, wherein at least a portion of the plurality of second quantum wells have the same maximum gain wavelength.
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41. The apparatus of claim 36, wherein at least a portion of individual quantum wells of the plurality of second quantum wells have different compositions.
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42. The apparatus of claim 36, wherein at least a portion of individual quantum wells of the plurality of second quantum wells have the same composition.
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43. The apparatus of claim 36, wherein at least a portion of individual quantum wells of the plurality of second quantum wells have the same strain.
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44. The apparatus of claim 36, wherein at least a portion of individual quantum wells of the plurality of second quantum wells have different strain.
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45. The apparatus of claim 36, wherein the plurality of second quantum wells has a plurality of barriers and at least a portion of barriers in the plurality have the same strain.
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46. The apparatus of claim 36, wherein the plurality of second quantum wells has a plurality of barriers and at least a portion of barriers in the plurality have different strains.
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47. The apparatus of claim 35, wherein each of the first and second quantum wells is selected from a strained quantum well, a tensile strained quantum well, an unstrained quantum well and a compression strained quantum well.
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48. The apparatus of claim 35, wherein a width of the first quantum well is different from a width of the second quantum well.
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49. The apparatus of claim 35, wherein the first quantum well generates a first quantum well maximum gain wavelength, and the second quantum well generates a second quantum well maximum gain wavelength.
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50. The apparatus of claim 49, wherein the first and second quantum well maximum gain wavelengths are different.
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51. The apparatus of claim 49, wherein the first and second quantum well maximum gain wavelengths are the same.
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52. The apparatus of claim 49, wherein the first quantum well maximum gain wavelength is longer than the second quantum well maximum gain wavelength.
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53. The apparatus of claim 1, wherein the first active region includes a first bulk region.
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54. The apparatus of claim 53, wherein the second active region includes a second bulk region.
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55. The apparatus of claim 53, wherein at least one of the first and second bulk regions is non-doped.
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56. The apparatus of claim 53, wherein at least one of the first and second bulk regions is substantially uniformly doped.
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57. The apparatus of claim 53, wherein at least one of the first and second bulk regions is non-uniformly doped.
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58. The apparatus of claim 53, wherein at least one of the first and second bulk regions has first and second opposing sides that are made of the same material.
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59. The apparatus of claim 53, wherein at least one of the first and second bulk regions has first and second opposing sides that are made of different materials.
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60. The apparatus of claim 54, wherein at least one of the first and second bulk regions has first and second opposing sides each having a different thickness.
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61. The apparatus of claim 54, wherein at least one of the first and second bulk regions has first and second opposing sides each having a different doping profile.
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62. The apparatus of claim 54, wherein at least one of the first and second bulk regions is compositionally graded.
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63. The apparatus of claim 54, wherein a width of the first bulk region is different from a width of the second bulk region.
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64. The apparatus of claim 35, further comprising:
a first partial DBR positioned between the first and second active regions.
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65. The apparatus of claim 1, wherein the first and second mirrors are each DBRs.
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66. The apparatus of claim 35, further comprising:
a third active region positioned between the second active region and the second mirror.
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67. The apparatus of claim 66, wherein the third active region includes a third quantum well.
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68. The apparatus of claim 67, wherein the third active region includes a plurality of third quantum wells.
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69. The apparatus of claim 68, wherein at least a portion of the plurality of third quantum wells have different widths.
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70. The apparatus of claim 68, wherein at least a portion of the plurality of third quantum wells have the same widths.
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71. The apparatus of claim 68, wherein at least a portion of the plurality of third quantum wells have different maximum gain wavelength.
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72. The apparatus of claim 68, wherein at least a portion of the plurality of third quantum wells have the same maximum gain wavelength.
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73. The apparatus of claim 68, wherein at least a portion of individual quantum wells of the plurality of third quantum wells have different compositions.
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74. The apparatus of claim 68, wherein at least a portion of individual quantum wells of the plurality of third quantum wells have the same composition.
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75. The apparatus of claim 68, wherein at least a portion of individual quantum wells of the plurality of third quantum wells have the same strain.
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76. The apparatus of claim 68, wherein at least a portion of individual quantum wells of the plurality of third quantum wells have different strain.
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77. The apparatus of claim 68, wherein the plurality of third quantum wells has a plurality of barriers and at least a portion of barriers in the plurality have the same strain.
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78. The apparatus of claim 68, wherein the plurality of third quantum wells has a plurality of barriers and at least a portion of barriers in the plurality have different strains.
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79. The apparatus of claim 67, wherein the third active region includes a third bulk region.
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80. The apparatus of claim 79, wherein each of the first, second and third bulk regions has a different width.
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81. The apparatus of claim 78, wherein the first quantum well generates a first quantum well maximum gain wavelength, the second quantum well generates a second quantum well maximum gain wavelength and the third quantum well generates a third quantum well maximum gain wavelength.
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82. The apparatus of claim 78, wherein all of the first, second and third quantum well maximum gain wavelengths are all different.
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83. The apparatus of claim 78, wherein at least two of the first, second and third quantum well maximum gain wavelengths are different.
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84. The apparatus of claim 78, wherein all of the first, second and third quantum well maximum gain wavelengths are the same.
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85. The apparatus of claim 78, wherein at least two of the first, second and third quantum well maximum gain wavelengths are the same.
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86. The apparatus of claim 78, wherein each of the first, second and third quantum wells has a different width.
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87. The apparatus of claim 78, wherein each of the first, second and third quantum wells produces an output with a different wavelength.
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88. The apparatus of claim 78, further comprising:
a second tunnel junction positioned between the second active region and the third active region.
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89. The apparatus of claim 88, wherein the second tunnel junction has first and second opposing sides that are made of the same material.
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90. The apparatus of claim 88, wherein the second tunnel junction has first and second opposing sides that are made of the different materials.
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91. The apparatus of claim 88, wherein the second tunnel junction has first and second opposing sides each having a different thickness.
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92. The apparatus of claim 88, wherein the second tunnel junction has first and second opposing sides each having a different doping profile.
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93. The apparatus of claim 88, wherein the second tunnel junction is a compositionally graded tunnel junction.
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94. The apparatus of claim 87, further comprising:
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a first partial DBR positioned between the first tunnel junction and the second active region; and
a second partial DBR positioned between the second tunnel junction and the third active region.
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95. The apparatus of claim 88, further comprising:
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a second ion implantation layer positioned between the first tunnel junction and the second active region; and
a third ion implantation layer positioned between the second tunnel junction and the third active region.
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96. The apparatus of claim 95, further comprising:
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a first partial DBR positioned between the first tunnel junction and the second ion implantation layer; and
a second partial DBR positioned between the second tunnel junction and the third ion implantation layer.
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97. A vertical cavity surface emitting laser, comprising:
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a first mirror;
a substrate;
a second mirror coupled to the substrate;
at least a first and a second active region each positioned between the first and second mirrors, each of the first and second active regions being made of a material that upon application of electrical or electromagnetic energy the first and second regions become optically active;
a first ion implantation layer positioned between the first and second mirrors; and
a first tunnel junction positioned between the first and second mirrors.
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98. A detector, comprising:
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a first mirror;
a substrate;
a second mirror coupled to the substrate;
at least a first and a second active region each positioned between the first and second mirrors, each of the first and second active regions being made of a material that upon application of electrical or electromagnetic energy the first and second regions become optically active;
a first ion implantation layer positioned between the first and second mirrors; and
a first tunnel junction positioned between the first and second mirrors.
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99. A modulator, comprising:
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a first mirror;
a substrate;
a second mirror coupled to the substrate;
at least a first and a second active region each positioned between the first and second mirrors, each of the first and second active regions being made of a material that upon application of electrical or electromagnetic energy the first and second regions become optically active;
a first ion implantation layer positioned between the first and second mirrors; and
a first tunnel junction positioned between the first and second mirrors.
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100. An actuator, comprising:
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a first mirror;
a substrate;
a second mirror coupled to the substrate;
at least a first and a second active region each positioned between the first and second mirrors, each of the first and second active regions being made of a material that upon application of electrical or electromagnetic energy the first and second regions become optically active;
a first ion implantation layer positioned between the first and second mirrors; and
a first tunnel junction positioned between the first and second mirrors.
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101. An amplifier, comprising:
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a first mirror;
a substrate;
a second mirror coupled to the substrate;
at least a first and a second active region each positioned between the first and second mirrors, each of the first and second active regions being made of a material that upon application of electrical or electromagnetic energy the first and second regions become optically active;
a first ion implantation layer positioned between the first and second mirrors; and
a first tunnel junction positioned between the first and second mirrors.
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Specification