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Magnetic confinement in a plasma reactor having an RF bias electrode

  • US 6,488,807 B1
  • Filed: 05/03/2000
  • Issued: 12/03/2002
  • Est. Priority Date: 06/27/1991
  • Status: Expired due to Fees
First Claim
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1. An RF plasma reactor for processing a semiconductor workpiece, comprising:

  • a reactor chamber comprising one or more wall structures for containing a plasma therein;

    a workpiece support adapted for supporting a workpiece to be processed within the chamber;

    a gas inlet communicating with the chamber for supplying a plasma precursor process gas to the chamber;

    a coil antenna capable of receiving a source RF power signal and being juxtaposed near the chamber so as to be able to inductively couple RF power into the chamber;

    said workpiece support comprising a bias electrode capable of receiving a bias RF power signal so as to control an electric field at a top surface of the workpiece;

    first and second magnet structures adjacent the one wall structure and in spaced relationship with one pole of the first magnet structure facing an opposite pole of the second magnet structure, said magnet structures providing a plasma-confining static magnetic field adjacent said wall structure;

    wherein said one wall structure comprises a cylindrical side wall, said chamber further comprising a ceiling wall structure, said cylindrical side wall extending from said ceiling to the plane of said workpiece support, said first and second magnet structures being positioned adjacent said cylindrical side wall; and

    wherein the ceiling wall structure and the bias electrode of the workpiece support comprise opposed electrodes adapted to be connected to a high frequency power supply.

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