Semiconductor memory device and method for fabricating the same

• US 6,489,644 B1
• Filed: 08/11/2000
• Issued: 12/03/2002
• Est. Priority Date: 12/26/1997
• Status: Expired due to Fees

• Current Assignee: LG Semico Company Limited (SK Hynix Inc.)
• Original Assignee: LG Semico Company Limited (SK Hynix Inc.)
• Inventors: Seon, Jeong Min
• Primary Examiner(s): Everhart, Caridad
• Assistant Examiner(s): Lee, Calvin
• Application Number:
  US09/635,437
• Time in Patent Office: 844 Days
• Field of Search: 438/238, 438/239, 438/240, 438/3, 257/295, 257/627, 257/310, 257/532, 257/533, 257/540, 257/763
• US Class Current: 257/295
• CPC Class Codes: H01L 28/55 with a dielectric comprising a perovskite structure material
• CPC Class Codes: H01L 28/60 Electrodes
• CPC Class Codes: H10B 53/00 Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors

Abstract

A semiconductor memory device and method of fabricating the same, which improves adhesion of the lower electrode of a ferroelectric planar capacitor, and prevents inter-diffusion between the Pt electrode of the capacitor and adhesion layer placed under the Pt electrode. The semiconductor memory device includes an insulating layer formed on a substrate, a paraelectric layer formed on the insulating layer, and a conductive layer formed on the paraelectric layer.

Claims

1. A semiconductor memory device, comprising:

an insulating layer formed on a substrate;

a paraelectric layer formed on the insulating layer;

a conductive layer formed on the paraelectric layer;

a ferroelectric layer formed on the conductive layer; and

a second conductive layer formed on the ferroelectric conductive layer;

wherein the conductive layer is formed in lattice matching with the paraelectric layer and the conductive layer is formed in lattice matching with the ferroelectric layer.

2. The semiconductor memory device as claimed in claim 1, wherein the insulating layer is formed of at least one of oxide and nitride.

3. The semiconductor memory device as claimed in claim 2, wherein the oxide has priority orientation (100).

4. The semiconductor memory device as claimed in claim 1, wherein the paraelectric layer is formed of at least one of STO(SrTiO₃) and BSTO[(Ba,Sr)TiO₃].

5. The semiconductor memory device as claimed in claim 1, wherein the conductive layer is formed in lattice matching with the paraelectric layer.

6. The semiconductor memory device as claimed in claim 1, wherein the conductive layer is formed of at least one of Pt and Ir.

7. The semiconductor memory device as claimed in claim 1, wherein the ferroelectric conductive layer and second conductive layer are sequentially formed on the conductive layer.

8. The semiconductor memory device as claimed in claim 7, wherein the ferroelectric conductive layer is formed in lattice matching with the conductive layer.

9. The semiconductor memory device as claimed in claim 7, wherein the ferroelectric layer is formed of at least one of BST[(Ba,Sr)TiO₃], BTO(BaTiO₃), PZT[(Pb(Zr,Ti)O₃] and PLZT[(Pb,Li) (Zr,Ti)O₃].

10. The semiconductor memory device as claimed in claim 7, wherein the ferroelectric layer and paraelectric layer are formed of materials including identical constituents.

11. The semiconductor memory device as claimed in claim 7, wherein the second conductive layer is formed of at least one of Pt and Ir.