Etching method for production of semiconductor devices
First Claim
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1. A method for forming a gate electrode of a semiconductor device, comprising:
- providing a semiconductor substrate having a stack of a resist mask layer, an organic coating layer, a conductive material layer, and a gate dielectric layer, the resist mask layer including a resist mask pattern partially masking the organic coating layer;
etching the organic coating layer through the resist mask layer using an etching gas atmosphere including O2, Cl2, and HBr to form a pattern of the organic coating corresponding with the resist mask pattern, the etching including controllably reducing a width of the resist mask pattern such that a width of the pattern of the organic coating is determined by the reduced width of the resist mask pattern; and
patterning the conductive material layer by etching through the pattern of the organic material, wherein;
the mask pattern includes an isolated mask pattern having a first lateral mask dimension before the etching and a densely arranged mask pattern having a second lateral mask dimension before the etching;
the pattern of the organic coating includes an isolated pattern corresponding with the isolated mask pattern and a densely arranged pattern corresponding with the densely arranged mask pattern; and
the etching is performed such that the isolated pattern has a first lateral dimension, the densely arranged pattern has a second lateral dimension, and a first difference between the first lateral dimension of the pattern and the first lateral dimension of the mask pattern is substantially identical to a second difference between the second lateral dimension of the pattern and the second lateral dimension of the mask pattern.
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Abstract
An etching method for use in production of semiconductor devices is disclosed. In the etching method, CBrx or its derivative formed in the plasma is deposited on portions of the surface of a substrate to be etched. A sidewall and/or underlying layer protection effect is obtained concurrently with an improved resist selectivity through the function of the high boiling point of the deposit.
36 Citations
14 Claims
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1. A method for forming a gate electrode of a semiconductor device, comprising:
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providing a semiconductor substrate having a stack of a resist mask layer, an organic coating layer, a conductive material layer, and a gate dielectric layer, the resist mask layer including a resist mask pattern partially masking the organic coating layer;
etching the organic coating layer through the resist mask layer using an etching gas atmosphere including O2, Cl2, and HBr to form a pattern of the organic coating corresponding with the resist mask pattern, the etching including controllably reducing a width of the resist mask pattern such that a width of the pattern of the organic coating is determined by the reduced width of the resist mask pattern; and
patterning the conductive material layer by etching through the pattern of the organic material, wherein;
the mask pattern includes an isolated mask pattern having a first lateral mask dimension before the etching and a densely arranged mask pattern having a second lateral mask dimension before the etching;
the pattern of the organic coating includes an isolated pattern corresponding with the isolated mask pattern and a densely arranged pattern corresponding with the densely arranged mask pattern; and
the etching is performed such that the isolated pattern has a first lateral dimension, the densely arranged pattern has a second lateral dimension, and a first difference between the first lateral dimension of the pattern and the first lateral dimension of the mask pattern is substantially identical to a second difference between the second lateral dimension of the pattern and the second lateral dimension of the mask pattern. - View Dependent Claims (2, 4, 5, 12)
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3. A method for manufacturing a semiconductor device, comprising:
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providing a semiconductor substrate having an organic material layer thereon and a mask layer having a mask pattern partially masking the organic material layer; and
etching the organic material layer through the mask layer using an etching gas atmosphere including O2, Cl2, and HBr to form a pattern of the organic material layer corresponding with the mask pattern, the etching including controllably reducing a lateral dimension of the pattern, wherein;
the mask pattern includes an isolated mask pattern having a first lateral mask dimension before the etching and a densely arranged mask pattern having a second lateral mask dimension before the etching;
the pattern of the organic coating includes an isolated pattern corresponding with the isolated mask pattern and a densely arranged pattern corresponding with the densely arranged mask pattern; and
the etching is performed such that the isolated pattern of the organic material layer has a first lateral dimension, the densely arranged pattern of the organic material layer has a second lateral dimension, and a first difference between the first lateral dimension of the pattern and the first lateral dimension of the mask is substantially identical to a second difference between the second lateral dimension of the pattern and the second lateral dimension of the mask. - View Dependent Claims (6, 7, 13)
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8. A method for adjusting a lateral dimension of a resist mask pattern, comprising:
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providing a semiconductor substrate having a resist mask layer thereon, the resist mask layer including a resist mask pattern; and
adjusting a lateral dimension of the resist mask pattern by laterally etching the resist with an etching gas atmosphere including O2, Cl2, and HBr, wherein;
the resist mask pattern includes an isolated mask pattern and a densely arranged mask pattern; and
the adjusting comprises laterally etching on the isolated mask pattern by an amount that is substantially identical to an amount of lateral etching on the densely arranged mask pattern. - View Dependent Claims (9, 10, 11)
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14. A method for adjusting a lateral dimension of a resist mask pattern, comprising:
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providing a semiconductor substrate having a conductive material layer thereon, and a resist mask layer over the conductive material layer, the resist mask layer including a resist mask pattern;
adjusting a lateral dimension of the resist mask pattern by laterally etching the resist with an etching gas atmosphere including O2, Cl2, and HBr; and
patterning the conductive material layer by etching through the resist mask pattern with the adjusted lateral dimension, wherein;
the resist mask pattern includes an isolated mask pattern and a densely arranged mask pattern; and
the adjusting comprises laterally etching on the isolated mask pattern by an amount that is substantially identical to an amount of lateral etching on the densely arranged mask pattern.
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Specification