Method of forming a transistor with a strained channel
First Claim
1. A method of fabricating a semiconductor device incorporated with a strained channel, on a semiconductor substrate, comprising the steps of:
- forming a semiconductor alloy layer on said semiconductor substrate, wherein said semiconductor alloy layer is comprised with a first element, a second element, and a third element;
forming a gate insulator layer overlying said semiconductor alloy layer;
forming a gate structure on said gate insulator layer forming insulator spacers on sides of said gate structure;
forming source/drain regions in area of said semiconductor alloy layer and in an area of said semiconductor substrate not covered by said gate structure or by said insulator spacers;
removing portions of said semiconductor alloy not covered by said gate structure or by said insulator spacers, exposing underlying portions of said semiconductor substrate comprised with said source/drain region; and
forming metal silicide regions on said portions of said semiconductor substrate comprised with said source/drain region.
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Accused Products
Abstract
A method of forming a tensile or compressive strained channel region for a semiconductor device, such as a MOSFET device, allowing improved carrier transport properties and increased device performance to be realized, has been developed. The method features the epitaxial growth of a semiconductor layer such as silicon, or silicon-germanium, with the incorporation of atoms such as carbon. The silicon-germanium-carbon channel layer, under biaxial tensile or compressive strain, is then overlaid with an optional silicon capping layer, used to accommodate the overlying, thermally grown silicon dioxide gate insulator layer, of the MOSFET device.
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Citations
32 Claims
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1. A method of fabricating a semiconductor device incorporated with a strained channel, on a semiconductor substrate, comprising the steps of:
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forming a semiconductor alloy layer on said semiconductor substrate, wherein said semiconductor alloy layer is comprised with a first element, a second element, and a third element;
forming a gate insulator layer overlying said semiconductor alloy layer;
forming a gate structure on said gate insulator layer forming insulator spacers on sides of said gate structure;
forming source/drain regions in area of said semiconductor alloy layer and in an area of said semiconductor substrate not covered by said gate structure or by said insulator spacers;
removing portions of said semiconductor alloy not covered by said gate structure or by said insulator spacers, exposing underlying portions of said semiconductor substrate comprised with said source/drain region; and
forming metal silicide regions on said portions of said semiconductor substrate comprised with said source/drain region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of fabricating a semiconductor device incorporated with a strained channel, on a semiconductor substrate, comprising the steps of:
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forming a semiconductor alloy layer on said semiconductor substrate, wherein said semiconductor alloy layer is comprised with a first element, a second element, and a third element;
forming a semiconductor capping layer on said semiconductor alloy layer;
forming a gate insulator layer overlying said semiconductor alloy layer;
forming a gate structure on said gate insulator layer, with said gate structure comprised of a conductive layer and of underlying silicon capping layer;
forming insulator spacers on sides of said gate structure;
forming source/drain regions in portions of said silicon capping layer, portions of said semiconductor substrate, and in portions of said semiconductor alloy layer not covered by said gate structure of by said insulator spacers;
selectively removing portions of said silicon capping layer, and portions of said semiconductor alloy layer not covered by said gate structure or by said insulator spacers, exposing underlying portions of said semiconductor substrate comprised with said source/drain regions; and
forming metal silicide regions on portions of said semiconductor substrate comprised with said source/drain regions. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A method of fabricating a semiconductor device on a semiconductor substrate, featuring a strained channel layer, comprising the steps of:
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forming isolation regions in a top portion of said semiconductor substrate;
performing a first epitaxial growth procedure to selectively grow a strained channel layer on substantially the portions of said semiconductor substrate not occupied by said isolation regions;
performing a second epitaxial growth procedure to selectively grow a capping layer on said channel layer;
forming a gate insulator layer overlying said capping layer;
forming a gate structure on said gate insulator layer, with said gate structure comprised of a conductive layer and of underlying silicon capping layer;
forming insulator spacers on sides of said gate structure;
forming source/drain regions in portions of said silicon capping layer, portions of said semiconductor substrate, and in portions of said semiconductor alloy layer, not covered by said gate structure or by said insulator spacers;
selectively removing portions of said silicon capping layer, and portions of said semiconductor alloy layer not covered by said gate structure or by said insulator spacers, exposing underlying portions of said semiconductor substrate comprised with said source/drain regions; and
forming metal silicide regions on portions of said semiconductor substrate comprised with said source/drain regions. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30, 31, 32)
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Specification