Integrated coil inductors for IC devices
First Claim
1. A semiconductor structure comprising one or more coils integrated with an integrated circuit (IC) chip, each coil comprising a bottom coil element and a top coil element that are in electrical contact with each other through side coil elements, wherein said bottom coil element is located within a cavity formed in a semiconductor substrate, said side coil elements are located on exposed vertical sidewalls of a patterned back-end-of-the-line layer, and said top coil element is located within or atop said patterned back-end-of-the-line layers.
8 Assignments
0 Petitions
Accused Products
Abstract
A means for fabrication of solenoidal inductors integrated in a semiconductor chip is provided. The solenoidal coil is partially embedded in a deep well etched into the chip substrate. The non-embedded part of the coil is fabricated as part of the BEOL metallization layers. This allows for a large cross-sectional area of the solenoid turns, thus reducing the turn-to-turn capacitive coupling. Because the solenoidal coils of this invention have a large diameter cross-section, the coil can be made with a large inductance value and yet occupy a small area of the chip. The fabrication process includes etching of a deep cavity in the substrate after all the FEOL steps are completed; lining said cavity with a dielectric followed by fabrication of the part of the coil that will be embedded by deposition of a conductive material metal through a mask; deposition of dielectric and planarization of same by CMP. After planarization the fabrication of the remaining part of the solenoidal coil is fabricated as part of the metallization in the BEOL (i.e. as line/vias of the BEOL). To further increase the cross section of the solenoidal coil part of it may be built by electrodeposition through a mask on top of the BEOL layers.
-
Citations
15 Claims
- 1. A semiconductor structure comprising one or more coils integrated with an integrated circuit (IC) chip, each coil comprising a bottom coil element and a top coil element that are in electrical contact with each other through side coil elements, wherein said bottom coil element is located within a cavity formed in a semiconductor substrate, said side coil elements are located on exposed vertical sidewalls of a patterned back-end-of-the-line layer, and said top coil element is located within or atop said patterned back-end-of-the-line layers.
Specification