Integrated coil inductors for IC devices

• US 6,492,708 B2
• Filed: 03/14/2001
• Issued: 12/10/2002
• Est. Priority Date: 03/14/2001
• Status: Expired due to Term

• Current Assignee: Globalfoundries US Incorporated (GlobalFoundries, Inc.)
• Original Assignee: International Business Machines Corporation
• Inventors: Rosner, Joanna, Cordes, Steven A., Groves, Robert A., Lund, Jennifer L., Carasso, Melanie L., Acosta, Raul E.
• Primary Examiner(s): Lee, Eddie
• Assistant Examiner(s): Warren, Matthew E.
• Application Number:
  US09/808,381
• Publication Number:
  US 20020130386A1
• Time in Patent Office: 636 Days
• Field of Search: 257/421, 257/422, 257/531, 257/534
• US Class Current: 257/531
• CPC Class Codes: H01F 17/0006 Printed inductances printed coils for dynamo-electric machines H02K3/26; printed circuits H05K
• CPC Class Codes: H01F 17/0033 with the coil helically wound around a magnetic core
• CPC Class Codes: H01F 41/041 Printed circuit coils apparatus or processes for manufacturing printed circuits in general H05K3/00
• CPC Class Codes: H01L 27/08 including only semiconductor components of a single kind
• CPC Class Codes: H01L 28/10 Inductors

Abstract

A means for fabrication of solenoidal inductors integrated in a semiconductor chip is provided. The solenoidal coil is partially embedded in a deep well etched into the chip substrate. The non-embedded part of the coil is fabricated as part of the BEOL metallization layers. This allows for a large cross-sectional area of the solenoid turns, thus reducing the turn-to-turn capacitive coupling. Because the solenoidal coils of this invention have a large diameter cross-section, the coil can be made with a large inductance value and yet occupy a small area of the chip. The fabrication process includes etching of a deep cavity in the substrate after all the FEOL steps are completed; lining said cavity with a dielectric followed by fabrication of the part of the coil that will be embedded by deposition of a conductive material metal through a mask; deposition of dielectric and planarization of same by CMP. After planarization the fabrication of the remaining part of the solenoidal coil is fabricated as part of the metallization in the BEOL (i.e. as line/vias of the BEOL). To further increase the cross section of the solenoidal coil part of it may be built by electrodeposition through a mask on top of the BEOL layers.

Claims

1. A semiconductor structure comprising one or more coils integrated with an integrated circuit (IC) chip, each coil comprising a bottom coil element and a top coil element that are in electrical contact with each other through side coil elements, wherein said bottom coil element is located within a cavity formed in a semiconductor substrate, said side coil elements are located on exposed vertical sidewalls of a patterned back-end-of-the-line layer, and said top coil element is located within or atop said patterned back-end-of-the-line layers.

2. The semiconductor structure of claim 1 wherein the one or more coils includes a magnetic core formed between coil elements.

3. The semiconductor structure of claim 2 wherein said magnetic core includes a magnetic material selected from the group consisting of a Ni/Fe alloy and AlNiCo.

4. The semiconductor structure of claim 1 wherein said one or more coils is a solenoidal coil.

5. The semiconductor structure of claim 1 wherein the one or more coils has a toroid shape.

6. The semiconductor structure of claim 1 wherein the one or more coils is composed of a conductive material selected from the group consisting of Cu, Al and W.

7. The semiconductor structure of claim 1 wherein each of said coil elements is composed of the same or different conductive material.

8. The semiconductor structure of claim 1 wherein said cavity has a depth of from about 10 to about 50 microns from a top surface of said substrate.

9. The semiconductor structure of claim 8 wherein said depth is from about 20 to about 25 microns.

10. The semiconductor structure of claim 1 wherein said cavity is lined with a first dielectric material.

11. The semiconductor structure of claim 10 wherein said first dielectric material is composed of a dielectric selected from the group consisting of an oxide, a nitride and polyimide.

12. The semiconductor structure of claim 1 wherein said cavity includes a second dielectric material that separates the top coil element from the bottom coil element.

13. The semiconductor structure of claim 12 wherein said second dielectric material is composed of a dielectric selected from the group consisting of an oxide, a nitride and a polyimide.

14. The semiconductor structure of claim 1 wherein said back-end-of-the-line layer includes at least a dielectric material.

15. An electrical transformer which comprises two coils of claim 1 having a common magnetic core.