High frequency power amplifying module and wireless communication apparatus

• US 6,492,872 B1
• Filed: 09/07/2000
• Issued: 12/10/2002
• Est. Priority Date: 09/29/1999
• Status: Expired due to Term

• Current Assignee: Renesas Semiconductor Package & Test Solutions Co., Ltd. (Renesas Electronics Corporation)
• Original Assignee: Hitachi, Ltd., Hitachi Tohbu Semiconductor, Ltd. (Renesas Electronics Corporation)
• Inventors: Hotta, Masao, Yoshida, Isao, Fujioka, Toru, Morikawa, Masatoshi, Adachi, Tetsuaki, Matsunaga, Yoshikuni
• Primary Examiner(s): NGUYEN, PATRICIA T
• Application Number:
  US09/657,237
• Time in Patent Office: 824 Days
• Field of Search: 330/133, 330/134, 330/285
• US Class Current: 330/285
• CPC Class Codes: H03F 1/301 in MOSFET amplifiers H03F1/303, H03F1/305, H03F1/308 take precedence
• CPC Class Codes: H03G 3/3042 in modulators, frequency-changers, transmitters or power amplifiers transmission power control in bidirectional transmission systems H04W52/04

Abstract

A high frequency power amplifier module is provided for improving output controllability. A wireless communication apparatus incorporates a high frequency power amplifier module in a multi-stage configuration including a plurality of cascaded MOSFETS. The power amplifier module comprises a bias circuit for generating a gate voltage in response to a power control voltage (vapc) generated based on a power control signal of the wireless communication apparatus. The gate voltage has a bias pattern which presents smaller fluctuations in output power in response to a control voltage (Vapc) in a region near a threshold voltage (Vth) of the MOSFETs in respective amplification stages. In this way, the controllability for the output power is improved. More specifically, the power amplifier module has a gate bias circuit for generating the gate voltage (Vg) which follows a gate voltage pattern. The gate voltage (Vg) supplied to a control terminal in response to the control voltage (Vapc) largely changes in a region where the gate voltage (Vg) is lower than the threshold voltage (Vth) of the respective MOSFETs, and slightly changes near the threshold voltage (Vth). Also, the gate voltage (Vg) presents desired characteristics from the vicinity of the threshold voltage (Vth) to a high Vapc voltage region.

Claims

1. A high frequency power amplifier module comprising:

an input terminal;

an output terminal;

a control terminal;

a first semiconductor amplifier device having a control terminal connected to said input terminal, and a first terminal for outputting an output signal in accordance with a signal supplied to said input terminal;

a second semiconductor amplifier device having a control terminal, a first terminal, and a second terminal, said second semiconductor amplifier device positioned between the first terminal of said first semiconductor amplifier device and said output terminal for outputting a signal in accordance with said output signal; and

a bias circuit connected to said control terminal for supplying the control terminal of said first semiconductor amplifier device with a bias which exhibits nonlinear characteristics in response to a control voltage supplied to said control terminal,

wherein said first semiconductor amplifier device become operative after said second semiconductor amplifier device has been operated.

2. A high frequency power amplifier module according to claim 1, further comprising a bias circuit connected to said control terminal for supplying the control terminal of said second semiconductor amplifier device with a bias which exhibits nonlinear characteristics in response to the control voltage supplied to said control terminal.

3. A high frequency power amplifier module according to claim 2, wherein said bias supplied to the control terminal of said first semiconductor amplifier device exhibits nonlinear characteristics which change in two steps in response to a change in said control voltage, and the bias supplied to the control terminal of said second semiconductor amplifier device exhibits nonlinear characteristics which change in one step or in two steps in response to a change in said control voltage.

4. A high frequency power amplifier module comprising:

an input terminal;

an output terminal;

a control terminal;

a first semiconductor amplifier device having a control terminal for receiving a signal from said input terminal, and a first terminal for outputting a signal in accordance with the signal from said input terminal;

a second semiconductor amplifier device having a control terminal for receiving a signal in accordance with the signal outputted from the first terminal of said first semiconductor amplifier device, and a first terminal connected to said output terminal for outputting a signal depending on said signal;

a bias circuit connected to said control terminal for supplying the control terminal of said first semiconductor amplifier device with a bias which exhibits a nonlinear characteristic in response to a control voltage supplied to said control terminal; and

at least one third semiconductor amplifier device cascaded between said first semiconductor amplifier device and said second semiconductor amplifier device, said third semiconductor amplifier device having a control terminal connected to a first terminal of a semiconductor amplifier device in a preceding stage, and a first terminal connected to a control terminal of a semiconductor amplifier device in a subsequent stage, wherein;

said semiconductor amplifier devices constitute an amplifier circuit in a three-stage configuration formed of a first-stage semiconductor amplifier device, a middle-stage semiconductor amplifier device and a last-stage semiconductor amplifier device;

biases supplied by bias circuits connected to said first-stage semiconductor amplifier device and said last-stage semiconductor amplifier device exhibit nonlinear characteristics which change in two steps in response to a change in said control voltage; and

a bias supplied by a bias circuit connected to said middle-stage semiconductor amplifier device exhibits nonlinear characteristics which change in one step in response to a change in said control voltage.

5. A wireless communication apparatus having a high frequency power amplifier module in a transmission side output stage, wherein said high frequency power amplifier module comprises:

an input terminal;

an output terminal;

a control terminal;

a first semiconductor amplifier device having a control terminal connected to said input terminal, and a first terminal for outputting an output signal in accordance with a signal supplied to said input terminal;

a second semiconductor amplifier device having a control terminal, a first terminal, and a second terminal, said second semiconductor amplifier device positioned between the first terminal of said first semiconductor amplifier device and said output terminal for outputting a signal in accordance with said output signal; and

a bias circuit connected to said control terminal for supplying the control terminal of said first semiconductor amplifier device with a bias which exhibits nonlinear characteristics in response to a control voltage supplied to said control terminal,

wherein said first semiconductor amplifier device become operative after said second semiconductor amplifier device has been operated.

6. A wireless communication apparatus according to claim 5, further comprising a bias circuit connected to said control terminal for supplying the control terminal of said second semiconductor amplifier device with a bias which exhibits nonlinear characteristics in response to the control voltage supplied to said control terminal.

7. A wireless communication apparatus according to claim 6, wherein said bias supplied to the control terminal of said first semiconductor amplifier device exhibits nonlinear characteristics which change in two steps in response to a change in said control voltage, and the bias supplied to the control terminal of said second semiconductor amplifier device exhibits nonlinear characteristics which change in one step or in two steps in response to a change in said control voltage.

8. A wireless communication apparatus subsequent stage, wherein:

said semiconductor amplifier devices constitute an amplifier circuit in a three-stage configuration formed of a first-stage semiconductor amplifier device, a middle-stage semiconductor amplifier device and a last-stage semiconductor amplifier device;

biases supplied by bias circuits connected to said first-stage semiconductor amplifier device and said last-stage semiconductor amplifier device exhibit nonlinear characteristics which change in two steps in response to a change in said control voltage; and

a bias supplied by a bias circuit connected to said middle-stage semiconductor amplifier device exhibits nonlinear characteristics which changes in one step in response to a change in said control voltage.