Vertical cavity apparatus with tunnel junction

• US 6,493,372 B1
• Filed: 06/23/2000
• Issued: 12/10/2002
• Est. Priority Date: 04/14/1998
• Status: Expired due to Term

• Current Assignee: NeoPhotonics Corporation (Lumentum Holdings Inc.)
• Original Assignee: BandwidthX Inc.
• Inventors: Yuen, Wupen, Boucart, Julien, Chang-Hasnain, Constance, Jansen, Michael, Nabiev, Rashit
• Primary Examiner(s): DAVIE, JAMES W
• Application Number:
  US09/602,454
• Time in Patent Office: 900 Days
• Field of Search: 372/96, 372/45, 372/46, 372/50
• US Class Current: 372/96
• CPC Class Codes: H01L 33/105 with a resonant cavity structure
• CPC Class Codes: H01S 5/026 Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers stabilisation of output H01S5/06
• CPC Class Codes: H01S 5/0614 controlled by electric field, i.e. whereby an additional electric field is used to tune the bandgap, e.g. using the Stark-effect
• CPC Class Codes: H01S 5/1021 Coupled cavities H01S5/14 takes precedence
• CPC Class Codes: H01S 5/146 using a fiber as external cavity
• CPC Class Codes: H01S 5/18311 using selective oxidation
• CPC Class Codes: H01S 5/1833 with more than one structure
• CPC Class Codes: H01S 5/18341 Intra-cavity contacts
• CPC Class Codes: H01S 5/18358 containing spacer layers to adjust the phase of the light wave in the cavity
• CPC Class Codes: H01S 5/18366 Membrane DBR, i.e. a movable DBR on top of the VCSEL
• CPC Class Codes: H01S 5/18372 by native oxidation
• CPC Class Codes: H01S 5/18397 Plurality of active layers vertically stacked in a cavity for multi-wavelength emission
• CPC Class Codes: H01S 5/2063 obtained by particle bombardment
• CPC Class Codes: H01S 5/3095 Tunnel junction
• CPC Class Codes: H01S 5/3201 incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
• CPC Class Codes: H01S 5/4018 Lasers electrically in series
• CPC Class Codes: H01S 5/4087 emitting more than one wavelength
• CPC Class Codes: H01S 5/423 having a vertical cavity
• CPC Class Codes: H01S 5/426 Vertically stacked cavities

Abstract

A vertical cavity apparatus includes first and second mirrors, a substrate and at least first and second active regions positioned between the first and second mirrors. A first etched layer is positioned between the first and second mirrors. A first tunnel junction is positioned between the first and second mirrors.

Claims

1. A vertical cavity apparatus, comprising:

a first mirror;

a substrate;

a second mirror coupled to the substrate;

at least a first and a second active region each positioned between the first and second mirrors, each of the first and second active regions being made of a material that upon application of electrical or electromagnetic energy the first and second regions become optically active;

a first etched layer positioned between the first and second mirrors; and

a first tunnel junction positioned between the first and second mirrors.

2. The apparatus of claim 1, further comprising:

at least a first oxide layer positioned between the first and second mirrors.

3. The apparatus of claim 2, wherein the first oxide layer is positioned between the first mirror and the first active region.

4. The apparatus of claim 2, wherein the first oxide layer is positioned between the second mirror and the second active region.

5. The apparatus of claim 1, wherein the first tunnel junction is positioned between the first and second active regions.

6. The apparatus of claim 1, wherein the substrate has a given crystallographic orientation.

7. The apparatus of claim 1, wherein the first mirror includes a metallic layer.

8. The apparatus of claim 1, where in the substrate has a etched pattern formed on a top or a bottom surface.

9. The apparatus of claim 1, wherein the substrate includes an epitaxy structure.

10. The apparatus of claim 1, wherein the substrate includes a dielectric pattern for selective area epitaxy.

11. The apparatus of claim 1, wherein substantially the entire apparatus is grown on a planar substrate with at least one layer grown while the planar substrate is held stationary and the other layers are grown while the planar substrate is rotated.

12. The apparatus of claim 1, further comprising:

at least a first ion implantation layer positioned between the first and second mirrors.

13. The apparatus of claim 1, wherein the at least first etched layer has a vertical profile with respect to a longitudinal axis of the substrate.

14. The apparatus of claim 1, wherein the at least first etched layer has a slopped profile with respect to a longitudinal axis of the substrate.

15. The apparatus of claim 1, wherein the at least first etched layer has a variable geometric profile with respect to a longitudinal axis of the substrate.

16. The apparatus of claim 1, wherein the at least first etched layer has an undercut profile with respect to a longitudinal axis of the substrate.

17. The apparatus of claim 1, wherein the first mirror is tunable.

18. The apparatus of claim 1, wherein the first mirror includes a tunable filter.

19. The apparatus of claim 1, further comprising:

a tunable filter coupled to the first mirror.

20. The apparatus of claim 1, wherein the tunnel junction has first and second opposing sides that are made of the same material.

21. The apparatus of claim 1, wherein the tunnel junction has first and second opposing sides that are made of different materials.

22. The apparatus of claim 1, wherein the tunnel junction has first and second opposing sides each having a different thickness.

23. The apparatus of claim 1, wherein the tunnel junction has first and second opposing sides each having a different doping profile.

24. The apparatus of claim 1, wherein the tunnel junction is substantially uniformly doped.

25. The apparatus of claim 1, wherein the tunnel junction is non-uniformly doped.

26. The apparatus of claim 1, wherein the tunnel junction is a compositionally graded tunnel junction.

27. The apparatus of claim 1, wherein the first active region includes a first quantum well.

28. The apparatus of claim 1, wherein the first active region includes a plurality of first quantum wells.

29. The apparatus of claim 28, wherein at least a portion of the plurality of first quantum wells have different widths.

30. The apparatus of claim 28, wherein at least a portion of the plurality of first quantum wells have the same widths.

31. The apparatus of claim 28, wherein at least a portion of the plurality of first quantum wells have different maximum gain wavelength.

32. The apparatus of claim 28, wherein at least a portion of the plurality of first quantum wells have the same maximum gain wavelength.

33. The apparatus of claim 28, wherein at least a portion of individual quantum wells of the plurality of first quantum wells have different compositions.

34. The apparatus of claim 28, wherein at least a portion of individual quantum wells of the plurality of first quantum wells have the same composition.

35. The apparatus of claim 28, wherein at least a portion of individual quantum wells of the plurality of first quantum wells have the same strain.

36. The apparatus of claim 28, wherein at least a portion of individual quantum wells of the plurality of first quantum wells have different strain.

37. The apparatus of claim 28, wherein the plurality of first quantum wells has a plurality of barriers and at least a portion of barriers in the plurality have the same strain.

38. The apparatus of claim 28, wherein the plurality of first quantum wells has a plurality of barriers and at least a portion of barriers in the plurality have different strains.

39. The apparatus of claim 28, wherein the plurality of first quantum wells has a plurality of barriers and at least a portion of barriers in the plurality are unstrained.

40. The apparatus of claim 27, wherein the second active region includes a second quantum well.

41. The apparatus of claim 27, wherein the second active region includes a plurality of second quantum wells.

42. The apparatus of claim 40, wherein at least a portion of the plurality of second quantum wells have different widths.

43. The apparatus of claim 41, wherein at least a portion of the plurality of second quantum wells have the same widths.

44. The apparatus of claim 41, wherein at least a portion of the plurality of second quantum wells have different maximum gain wavelength.

45. The apparatus of claim 41, wherein at least a portion of the plurality of second quantum wells have the same maximum gain wavelength.

46. The apparatus of claim 41, wherein at least a portion of individual quantum wells of the plurality of second quantum wells have different compositions.

47. The apparatus of claim 41, wherein at least a portion of individual quantum wells of the plurality of second quantum wells have the same composition.

48. The apparatus of claim 41, wherein at least a portion of individual quantum wells of the plurality of second quantum wells have the same strain.

49. The apparatus of claim 41, wherein at least a portion of individual quantum wells of the plurality of second quantum wells have different strain.

50. The apparatus of claim 41, wherein the plurality of second quantum wells has a plurality of barriers and at least a portion of barriers in the plurality have the same strain.

51. The apparatus of claim 41, wherein the plurality of second quantum wells has a plurality of barriers and at least a portion of barriers in the plurality have different strains.

52. The apparatus of claim 40, wherein each of the first and second quantum wells is selected from a strained quantum well, a tensile strained quantum well, an unstrained quantum well and a compression strained quantum well.

53. The apparatus of claim 40, wherein a width of the first quantum well is different from a width of the second quantum well.

54. The apparatus of claim 40, wherein the first quantum well generates a first quantum well maximum gain wavelength, and the second quantum well generates a second quantum well maximum gain wavelength.

55. The apparatus of claim 54, wherein the first and second quantum well maximum gain wavelengths are different.

56. The apparatus of claim 54, wherein the first and second quantum well maximum wavelengths are the same.

57. The apparatus of claim 54, wherein the first quantum well maximum gain wavelength is longer than the second quantum well maximum gain wavelength.

58. The apparatus of claim 1, wherein the first active region includes a first bulk region.

59. The apparatus of claim 58, wherein the second active region includes a second bulk region.

60. The apparatus of claim 59, wherein at least one of the first and second bulk regions is non-doped.

61. The apparatus of claim 59, wherein at least one of the first and second bulk regions is substantially uniformly doped.

62. The apparatus of claim 59, wherein at least one of the first and second bulk regions is non-uniformly doped.

63. The apparatus of claim 59, wherein at least one of the first and second bulk regions has first and second opposing sides that are made of the same material.

64. The apparatus of claim 59, wherein at least one of the first and second bulk regions has first and second opposing sides that are made of different materials.

65. The apparatus of claim 59, wherein at least one of the first and second bulk regions has first and second opposing sides each having a different thickness.

66. The apparatus of claim 59, wherein at least one of the first and second bulk regions has first and second opposing sides each having a different doping profile.

67. The apparatus of claim 59, wherein at least one of the first and second bulk regions is compositionally graded.

68. The apparatus of claim 59, wherein a width of the first bulk region is different from a width of the second bulk region.

69. The apparatus of claim 27, further comprising:

a first partial DBR positioned between the first and second active regions.

70. The apparatus of claim 1, wherein the first and second mirrors are each DBRs.

71. The apparatus of claim 27, further comprising:

a third active region positioned between the second active region and the second mirror.

72. The apparatus of claim 71, wherein the third active region includes a third quantum well.

73. The apparatus of claim 72, wherein the third active region includes a plurality of third quantum wells.

74. The apparatus of claim 73, wherein at least a portion of the plurality of third quantum wells have different widths.

75. The apparatus of claim 73, wherein at least a portion of the plurality of third quantum wells have the same widths.

76. The apparatus of claim 73, wherein at least a portion of the plurality of third quantum wells have different maximum gain wavelength.

77. The apparatus of claim 73, wherein at least a portion of the plurality of third quantum wells have the same maximum gain wavelength.

78. The apparatus of claim 73, wherein at least a portion of individual quantum wells of the plurality of third quantum wells have different compositions.

79. The apparatus of claim 73, wherein at least a portion of individual quantum wells of the plurality of third quantum wells have the same composition.

80. The apparatus of claim 73, wherein at least a portion of individual quantum wells of the plurality of third quantum wells have the same strain.

81. The apparatus of claim 73, wherein at least a portion of individual quantum wells of the plurality of third quantum wells have different strain.

82. The apparatus of claim 73, wherein the plurality of third quantum wells has a plurality of barriers and at least a portion of barriers in the plurality have the same strain.

83. The apparatus of claim 73, wherein the plurality of third quantum wells has a plurality of barriers and at least a portion of barriers in the plurality have different strains.

84. The apparatus of claim 71, wherein the third active region includes a third bulk region.

85. The apparatus of claim 84, wherein each of the first, second and third bulk regions has a different width.

86. The apparatus of claim 72, wherein the first quantum well generates a first quantum well maximum gain wavelength, the second quantum well generates a second quantum well maximum gain wavelength and the third quantum well generates a third quantum well maximum gain wavelength.

87. The apparatus of claim 72, wherein all of the first, second and third quantum well maximum gain wavelengths are all different.

88.The apparatus of claim 72, wherein at least two of the first, second and third quantum well maximum gain wavelengths are different.

88. The apparatus of claim 72, wherein all of the first, second and third quantum well maximum gain wavelengths are the same.

89. The apparatus of claim 72, wherein at least two of the first, second and third quantum well maximum gain wavelengths are the same.

90. The apparatus of claim 72, wherein each of the first, second and third quantum wells has a different width.

91. The apparatus of claim 72, wherein each of the first, second and third quantum wells produces an output with a different wavelength.

92. The apparatus of claim 72, further comprising:

a second tunnel junction positioned between the second active region and the third active region.

98. The apparatus of claim 71, further comprising:

a first partial DBR positioned between the first tunnel junction and the second active region; and

a second partial DBR positioned between the second tunnel junction and the third active region.

93. The apparatus of claim 93, wherein the second tunnel junction has first and second opposing sides that are made of the same material.

94. The apparatus of claim 93, wherein the second tunnel junction has first and second opposing sides that are made of different materials.

95. The apparatus of claim 93, wherein the second tunnel junction has first and second opposing sides each having a different thickness.

96. The apparatus of claim 93, wherein the second tunnel junction has first and second opposing sides each having a different doping profile.

97. The apparatus of claim 93, wherein the second tunnel junction is a compositionally graded tunnel junction.

99. The apparatus of claim 93, further comprising:

a second etched layer positioned between the first tunnel junction and the second active region; and

a third etched layer positioned between the second tunnel junction and the third active region.

100. The apparatus of claim 93, further comprising:

a first partial DBR positioned between the first tunnel junction and the second etched layer; and

a second partial DBR positioned between the second tunnel junction and the third etched layer.

101. A vertical cavity surface emitting laser, comprising:

a first mirror;

a substrate;

a second mirror coupled to the substrate;

at least a first and a second active region each positioned between the first and second mirrors, each of the first and second active regions being made of a material that upon application of electrical or electromagnetic energy the first and second regions become optically active;

a first etched layer positioned between the first and second mirrors; and

a first tunnel junction positioned between the first and second mirrors.

102. A detector, comprising:

a first mirror;

a substrate;

a second mirror coupled to the substrate;

at least a first and a second active region each positioned between the first and second mirrors, each of the first and second active regions being made of a material that upon application of electrical or electromagnetic energy the first and second regions become optically active;

a first etched layer positioned between the first and second mirrors; and

a first tunnel junction positioned between the first and second mirrors.

103. A modulator, comprising:

a first mirror;

a substrate;

a second mirror coupled to the substrate;

at least a first and a second active region each positioned between the first and second mirrors, each of the first and second active regions being made of a material that upon application of electrical or electromagnetic energy the first and second regions become optically active;

a first etched layer positioned between the first and second mirrors; and

a first tunnel junction positioned between the first and second mirrors.

104. An attenuator, comprising:

a first mirror;

a substrate;

a second mirror coupled to the substrate;

at least a first and a second active region each positioned between the first and second mirrors, each of the first and second active regions being made of a material that upon application of electrical or electromagnetic energy the first and second regions become optically active;

a first etched layer positioned between the first and second mirrors; and

first tunnel junction positioned between the first and second mirrors.

105. An amplifier, comprising:

a first mirror;

a substrate;

a second mirror coupled to the substrate;

at least a first-and a second active region each positioned between the first and second mirrors, each of the first and second active regions being made of a material that upon application of electrical or electromagnetic energy the first and second regions become optically active;

a first etched layer positioned between the first and second mirrors; and

a first tunnel junction positioned between the first and second mirrors.