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Magnetron sputtering apparatus with an integral cooling and pressure relieving cathode

  • US 6,494,999 B1
  • Filed: 11/09/2000
  • Issued: 12/17/2002
  • Est. Priority Date: 11/09/2000
  • Status: Expired due to Fees
First Claim
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1. A magnetron sputtering apparatus comprising:

  • a housing, at least one magnetron within the housing;

    a substrate;

    a sputtering processing chamber having a top flange, the flange having a shape and perimeter according to a predetermined form, the substrate being within the sputtering process chamber;

    a sputtering target assembly sealed to and insulated from the flange, such that a vacuum is capable of being maintained in the sputtering process chamber;

    wherein the sputtering target assembly comprises;

    a sputtering target and target backing plate assembly having opposed first and second sides, the first side providing material for sputtering, a pressure relief plate having opposed first and second sides, the target and target backing plate assembly second side being in contact with the first side of the pressure relief plate, heat exchange passages selected from at least one member of the group consisting of;

    heat exchange passages defined between the opposed sides of the sputtering target and backing plate assembly, heat exchange passages defined between the opposed sides of the pressure relief plate, and heat exchange passages defined by heat exchange cavities formed in at least one member of the group consisting of the first side of the pressure relief plate and the second side of the target and target backing plate assembly, wherein the heat exchange passages are formed between the first side of the pressure relief plate and the second side of the target and target backing plate assembly which enclose the heat exchange cavities, the heat exchange passages having one or more inlet and outlet openings, an insulation cover unit having opposed first and second sides, wherein the insulation cover unit is electrically isolated from the sputtering target;

    wherein the second side of the pressure relief plate is in contact with the first side of the cover unit to form at least one vacuum pressure space therebetween capable of maintaining a vacuum therein and the at least one vacuum pressure space having at least one vacuum port;

    wherein the pressure in the sputtering processing chamber is vacuum pressure which is the same or different from the pressure in the at least one vacuum pressure space;

    wherein every magnetron of the magnetron sputtering apparatus is outside the at least one vacuum pressure space of the sputtering target assembly.

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