Differentially-pumped material processing system

• US 6,495,010 B2
• Filed: 04/23/2001
• Issued: 12/17/2002
• Est. Priority Date: 07/10/2000
• Status: Expired due to Fees

• Current Assignee: Opnetics Corporation
• Original Assignee: Unaxis USA Incorporated (Unaxis)
• Inventors: Sferlazzo, Piero
• Primary Examiner(s): VerSteeg, Steven H.
• Application Number:
  US09/840,393
• Publication Number:
  US 20020003086A1
• Time in Patent Office: 603 Days
• Field of Search: 204/298.03, 204/298.04, 204/298.11, 204/298.16, 204/298.27, 204/298.28, 204/298.29, 204/192.12, 204/192.11, 204/192.13, 427/5, 427/569, 427/250.5, 118/712, 118/719, 118/720, 118/723.VE, 118/723.ER, 118/729, 118/733, 118/504
• US Class Current: 204/298.27
• CPC Class Codes: C23C 14/044 using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
• CPC Class Codes: C23C 14/228 Gas flow assisted PVD deposition
• CPC Class Codes: C23C 14/46 by ion beam produced by an external ion source

Abstract

A differentially pumped deposition system is described that includes a deposition source, such as a magnetron sputtering source, that is positioned in a first chamber. The deposition source generates deposition flux comprising neutral atoms and molecules. A shield that defines an aperture is positioned in the path of the deposition flux. The shield passes the deposition flux though the aperture and substantially blocks the deposition flux from propagating past the shield everywhere else. A substrate support is positioned in the second chamber adjacent to the shield. The pressure in the second chamber is lower than a pressure in the first chamber. A dual-scanning system scans the substrate support relative to the aperture with a first and a second motion, thereby improving uniformity of the deposited thin fill.

Claims

1. A differentially pumped deposition system comprising:

a. a deposition source that is positioned in a first chamber, the deposition source generating deposition flux comprising neutral atoms and molecules;

b. a shield defining an aperture that is positioned in a path of the deposition flux, the shield passing the deposition flux through the aperture and substantially blocking the deposition flux from propagating past the shield everywhere else;

c. a substrate support that is positioned in a second chamber adjacent to the shield;

a pressure in the second chamber being lower than a pressure in the first chamber; and

d. a dual-scanning system that scans the substrate support relative to the aperture with a rotational motion and a translational motion.

2. The deposition system of claim 1 wherein the deposition source comprises a magnetron sputter source.

3. The deposition system of claim 1 wherein the deposition source comprises an evaporation source.

4. The deposition system of claim 1 further comprising an ion source that generates an ion beam, the ion source being positioned in the second chamber so that the ion beam strikes the deposition area.

5. The deposition system of claim 4 wherein the ion source is positioned so that the ion beam does not overlap with the deposition flux.

6. The deposition system of claim 1 wherein the dual-scanning system comprises a mechanical scanning system.

7. The deposition system of claim 1 wherein a scan rate of the rotational motion is substantially greater than a scan rate of the translational motion.

8. The deposition system of claim 1 wherein a scan rate of at least one of the rotational motion and the translational motion varies with time during deposition.

9. The deposition system of claim 1 wherein the dual-scanning system comprises rotational scanning system and a translational scanning system, wherein the rotational motion comprises a rotation rate and the translational motion comprises a translation rate.

10. The deposition system of claim 9 wherein the rotation rate of the rotational motion is at least five times greater than the translation rate of the translational motion.

11. The deposition system of claim 1 wherein the aperture is shaped to increase a transmitted deposition flux.

12. The deposition system of claim 1 wherein the aperture is shaped to reduce an over-scan area.

13. The deposition system of claim 1 further comprising an in-situ monitoring system that monitors properties of a thin film during deposition.

14. A method of depositing a uniform thin film, the method comprising:

a. generating deposition flux at a first pressure;

b. exposing a substrate to the deposition flux, the substrate being at a second pressure, wherein the second pressure is lower than the first pressure; and

c. scanning the substrate relative to the deposition flux with a rotational motion and a translational motion, wherein a scan rate of the rotational motion is greater than a scan rate of the translational motion, thereby depositing a substantially uniform thin film onto the substrate.

15. The method of claim 14 wherein the rotational motion comprises a rotation rate the translational motion comprises a translation rate.

16. The method of claim 15 wherein the rotation rate of the rotational motion is least five times greater than the translation rate of the translational motion.

17. The method of claim 14 wherein the deposition flux is generated by magnetron sputtering.

18. The method of claim 14 further comprising passing the deposition flux through an aperture.

19. The method of claim 14 further comprising over scanning the substrate relative to the deposition flux in at least one of the rotational motion and the translational motion.

20. The method of claim 14 further comprising exposing the substrate to an ion beam.

21. The method of claim 20 wherein the ion beam does not overlap with the deposition flux.

22. The method of claim 20 wherein the ion beam does overlap with the deposition flux.

23. An ion beam assisted deposition system comprising:

a. a deposition source that is positioned in a first chamber, the deposition source generating deposition flux comprising neutral atoms and molecules;

b. a substrate support that is positioned in a second chamber;

a pressure in the second chamber being lower than a pressure in the first chamber; and

c. an ion source that generates an ion beam, the ion source being positioned in the second chamber so that the ion beam strikes a deposition area on the substrate support.

24. The deposition system of claim 23 wherein the deposition source comprises a magnetron sputter source.

25. The deposition system of claim 23 wherein the ion source is positioned so that the ion beam does not overlap the deposition flux.

26. The deposition system of claim 23 further comprising a dual-scanning system that scans the substrate support relative to the deposition flux with a rotational motion and a translational motion.

27. The deposition system of claim 26 wherein a scan rate of the rotational motion is substantially greater than a scan rate of the translational motion.

28. The deposition system of claim 26 wherein a scan rate of at least one of the rotational motion and the translational motion varies with time during deposition.

29. The deposition system of claim 26 wherein the dual-scanning system comprises a rotational scanning system that scans the substrate support at a rotation rate and a translational scanning system that scans the substrate support at a translation rate.

30. The deposition system of claim 29 wherein the rotation rate of the rotational motion is at least five times greater than the translation rate of the translational motion.

31. The deposition system of claim 23 further comprising an in-situ monitoring system that monitors properties of the deposition area during deposition.

32. The deposition system of claim 23 further comprising a shield that defines an aperture that is positioned in a path of the deposition flux, the shield passing the deposition flux through the aperture and substantially blocking the deposition flux from propagating past the shield everywhere else.

33. The deposition system of claim 32 wherein the aperture is shaped to increase the transmitted deposition flux.

34. The deposition system of claim 32 wherein the aperture is shaped to reduce an over-scan area.

35. A method of out-of-phase ion beam assisted deposition, the method comprising:

a. generating deposition flux at a first pressure;

b. depositing the deposition flux onto a substrate at a second pressure, wherein the second pressure is lower than the first pressure; and

c. exposing the substrate to an ion beam, wherein the ion beam does not overlap with the deposition flux.

36. The method of claim 35 wherein the deposition flux is generated by magnetron sputtering.

37. The method of claim 35 further comprising scanning the substrate relative to the deposition flux with first motion and a second motion.

38. The method of claim 37 wherein a scan rate of the first motion is greater than a scan rate of the second motion, thereby depositing a uniform thin film onto the substrate.

39. The method of claim 37 wherein the first motion is a rotational motion having a rotation rate and the second motion is a translational motion having a translation rate.

40. The method of claim 39 wherein the rotation rate of the rotational motion is least five times greater than the translation rate.

41. The method of claim 37 further comprising overscanning the substrate relative to the deposition flux in at least one of the first motion and the second motion.

42. The method of claim 35 further comprising passing the deposition flux through an aperture.