Flip chip package of monolithic microwave integrated circuit

• US 6,495,915 B1
• Filed: 08/09/2001
• Issued: 12/17/2002
• Est. Priority Date: 05/30/2001
• Status: Expired due to Fees

• Current Assignee: Apack Communications Inc.
• Original Assignee: Apack Communications Inc.
• Inventors: Hsieh, Tsung-Ying, Hsu, Chin-Lien, Hsu, Wen-Rui
• Primary Examiner(s): Williams, Alexander O.
• Application Number:
  US09/927,564
• Publication Number:
  US 20020180062A1
• Time in Patent Office: 495 Days
• Field of Search: 257/778, 257/734, 257/737, 257/738, 257/728, 257/724, 257/725, 257/692, 257/693, 257/774, 257/684, 257/796, 257/691
• US Class Current: 257/728
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/13111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/16235 the bump connector connecting to a via metallisation of the item
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/81801 Soldering or alloying
• CPC Class Codes: H01L 2224/85424 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/85444 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/8547 Zirconium (Zr) as principal constituent
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/81 using a bump connector
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01004 Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01032 : Germanium [Ge]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01039 : Yttrium [Y]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1423 : Monolithic Microwave Integrated Circuit [MMIC]
• CPC Class Codes: H01L 2924/15173 : in a single layer of the multilayer substrate
• CPC Class Codes: H01L 2924/15313 : being a land array, e.g. LGA
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3011 : Impedance

Abstract

A flip chip package of monolithic microwave integrated circuit (MMIC) is disclosed. The MMIC package includes a substrate with top and bottom surfaces; a MMIC chip, having an active surface; a plurality of metal strips on the active surface of the MMIC chip; a plurality of metal strips on the top surface of the substrate and electrically connected to the metal strips on the MMIC chip; a plurality of metal strips on the bottom surface of the substrate; a plurality of via holes, penetrating through the substrate and electrically connected to the metal strips on the substrate'"'"'s top and bottom surface; an underfill, filling all the chinks between MMIC chip and the substrate and covering up the MMIC chip. Moreover, the MMIC package has a penetration hole through the central area of the substrate and filled with a heat-dissipative material for heat dissipation.

Claims

1. A flip chip package of monolithic microwave integrated circuit (MMIC) comprising:

a substrate, having an top surface and a bottom surface, and each of the surfaces is divided respectively into a periphery area and a central area;

an integrated circuit chip (IC chip), having a first surface and a second surface, and each of the surfaces being divided respectively into a periphery area and a central area, and an MMIC package being made by flipping the IC chip to have its first surface covering on the top surface of the substrate, and the central area of the first surface having one or several active devices;

a plurality of metal strips, positioned on the IC chip'"'"'s first surface and disposed in the periphery area of the IC chip'"'"'s first surface, and these metal strips being electrically connected to the active devices on the first surface of the IC chip, wherein some of metal strips disposed in the periphery area of the IC chip'"'"'s first surface are arranged in a ground-signal-ground or signal-ground pattern;

a plurality of solder bumps, implanted respectively on and being electrically connected to the first surface'"'"'s metal strips of the plurality of IC chips;

a plurality of metal strips of the substrate'"'"'s top surface, disposed in the periphery area of the substrate'"'"'s top surface, and these metal strips being electrically connected to the plurality of solder bumps;

a plurality of metal strips of the substrate'"'"'s bottom surface, disposed in the periphery area of the substrate'"'"'s bottom surfaces;

a plurality of via holes, penetrating through the substrate and being electrically connected to the plurality of metal strips on the substrate'"'"'s top surface and to the plurality of metal strips on the substrate'"'"'s bottom surface respectively; and

an underfill, filling the solder bumps and the plurality of the metal strips which are connected to the solder bumps and are positioned on the IC chip'"'"'s first surface, also filling all the chinks around the top surface'"'"'s metal strips of the substrate, and covering the whole IC chip up to a height that is slightly higher than the thickness of the IC chip;

wherein both some of the plurality of metal strips disposed in the periphery area of the substrate'"'"'s top and bottom surfaces are arranged in a ground-signal-ground or a signal-ground pattern.

2. The flip chip package of MMIC of claim 1, wherein the plurality of solder bumps are implanted on and electrically connected to the top surface'"'"'s metal strips of the substrate, and also being electrically connected to the first surface'"'"'s metal strips of the IC chip.

3. The flip chip package of MMIC of claim 1, wherein the plurality of the first surface'"'"'s metal strips of the IC chip are input/output (I/O) ports and ground terminals of the IC chip.

4. The flip chip package of MMIC of claim 1, wherein the material of the plurality of the first surface'"'"'s metal strips of the IC chip is selected from the group of metal consisting of gold, copper, and aluminum.

5. The flip chip package of MMIC of claim 1, wherein the material of the plurality of the top surface'"'"'s metal strips and the plurality of the bottom surface'"'"'s metal strips of the substrate is selected from the group of metal consisting of gold, copper, and aluminum.

6. The flip chip package of MMIC of claim 1, wherein the material of the IC chip is selected from the group consisting of gallium arsenide (GaAs) of III-V group compound or silicon (Si).

7. The flip chip package of MMIC of claim 1, wherein the material of the solder bumps is selected from the group of metal or alloy consisting of gold (Au), gold-tin (Au—

Sn), gold-silicon (Au—

Si), gold-germanium (Au—

Ge), tin-lead (Sn—

Pb), tin-silver (Sn—

Ag), tin-lead-silver (Sn—

Pb—

Ag), indium (In), indium-tin (In—

Sn), indium-lead (In—

Pb).

8. The flip chip package of MMIC of claim 1, wherein the method for forming the solder bumps is selected from the group consisting of deposition, electroplating, stencil printing, wire bonding, solder ball implanting.

9. The flip chip package of MMIC of claim 1, wherein the material of the via holes is selected from the group of metal consisting of gold,, silver, copper, and aluminum.

10. The flip chip package of MMIC of claim 1, wherein the forming method of metal strips on the top and bottom surfaces of the substrate and on the first surface of the IC chip is etching.

11. The flip chip package of MMIC of claim 1, wherein the number and disposition of all the metal strips and via holes depend on the structure and size of the IC chip.

12. The flip chip package of MMIC of claim 1, wherein a penetration hole is provided in the central areas of the top and bottom surfaces of the substrate and the material removed by penetrating the penetration hole is replaced by filling a heat-dissipative material.

13. The flip chip package of MMIC of claim 12, wherein the heat-dissipative material is selected from the group consisting of boron nitride (BN), aluminum nitride (Al N), berylium oxide (Be O), aluminum oxide (Al₂O₃), silicon carbide (Si C).

14. The flip chip package of MMIC of claim 1, wherein the material of the underfill is thermosetting resin.