Hydrogenated oxidized silicon carbon material

• US 6,497,963 B1
• Filed: 06/23/2000
• Issued: 12/24/2002
• Est. Priority Date: 06/29/1998
• Status: Expired due to Term

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Perraud, Laurent Claude, Grill, Alfred, Jahnes, Christopher Vincent, Patel, Vishnubhai Vitthalbhai
• Primary Examiner(s): TURNER, ARCHENE A
• Application Number:
  US09/603,257
• Time in Patent Office: 914 Days
• Field of Search: 428/408, 428/446, 428/336, 428/698, 428/704, 423/446
• US Class Current: 428/446
• CPC Class Codes: C23C 16/325 Silicon carbide
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02167 the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02216 the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/02304 formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
• CPC Class Codes: H01L 21/02362 formation of intermediate layers, e.g. capping layers or diffusion barriers
• CPC Class Codes: H01L 21/3122 layers comprising polysiloxane compounds
• CPC Class Codes: H01L 21/31633 Deposition of carbon doped silicon oxide, e.g. SiOC
• CPC Class Codes: H01L 21/76832 Multiple layers
• CPC Class Codes: H01L 23/291 Oxides or nitrides or carbides, e.g. ceramics, glass
• CPC Class Codes: H01L 23/296 Organo-silicon compounds
• CPC Class Codes: H01L 23/5222 Capacitive arrangements or effects of, or between wiring layers other capacitive arrangements H01L23/642
• CPC Class Codes: H01L 23/5329 Insulating materials
• CPC Class Codes: H01L 23/53295 Stacked insulating layers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10T 428/30 Self-sustaining carbon mass or layer with impregnant or other layer

Abstract

A low dielectric constant, thermally stable hydrogenated oxidized silicon carbon film which can be used as an interconnect dielectric in IC chips is disclosed. Also disclosed is a method for fabricating a thermally stable hydrogenated oxidized silicon carbon low dielectric constant film utilizing a plasma enhanced chemical vapor deposition technique. Electronic devices containing insulating layers of thermally stable hydrogenated oxidized silicon carbon low dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of thermally stable hydrogenated oxidized silicon carbon low dielectric constant film, specific precursor materials having a ring structure are preferred.

Claims

1. A material comprising Si, C, O and H, said composition having a non-polymeric, covalently bonded structure comprising Si—

C, Si—

H, Si—

O and C—

H bonds and a dielectric constant of not more than 3.6.

2. A material composition according to claim 1, wherein said composition further comprises between about 5 and about 40 atomic percent of Si;

between about 5 and about 45 atomic percent of C;

between 0 and about 50 atomic percent of O; and

between about 10 and about 55 atomic percent of H.

3. A material composition according to claim 1, wherein said composition having a covalently bonded three-dimensional network.

4. A material composition according to claim 1, wherein said composition having a covalently bonded ring network.

5. A material composition according to claim 1, wherein said composition being thermally stable to a temperature of at least 350°

C.

6. A film formed of the material composition according to claim 1, wherein said film having a thickness of not more than 1.3 micrometers and a crack propagation velocity in water of less than 10⁻

9 m/s.

7. A film according to claim 6, wherein said crack propagation velocity in water is less than 10⁻

10 m/s.

8. A material composition according to claim 1, wherein said Si atoms are at least partially submitted by Ge atoms.

9. A material composition according to claim 1, wherein said composition preferably having a covalently bonded ring network and a dielectric constant of not more than 3.2.

10. A material composition according to claim 1 further comprising at least one element selected from the group consisting of F, N, and Ge.

11. A material composition comprising elements of Si, C and H, said composition having a non-polymeric covalently bonded structure comprising Si—

C, Si—

H and C—

H bonds and a dielectric constant of not more than 3.6.

12. A material composition according to claim 11, wherein said composition further comprises between about 5 and about 40 atomic percent of Si, between about 5 and about 45 atomic percent of C, and between about 10 and about 55 atomic percent of H.

13. A material composition according to claim 11, wherein said composition having a covalently bonded three-dimensional network.

14. A material composition according to claim 11, wherein said composition having a covalently bonded ring network.

15. A material composition according to claim 11, wherein said composition being thermally stable to a temperature of at least 350°

C.

16. A film formed of the material composition according to claim 11, wherein said film having a thickness of not more than 1.3 micrometers and a crack propagation velocity in water of less than 10⁻

9 m/s.

17. A film according to claim 16, wherein said crack propagation velocity in water is less than 10⁻

10 m/s.

18. A material composition according to claim 11, wherein said Si atoms are at least partially substituted by Ge atoms.

19. A material composition according to claim 11, wherein said composition preferably having a covalently bonded ring network and a dielectric constant of not more than 3.2.

20. A material composition according to claim 11 further comprising at least one element selected from the group consisting of F, N, and Ge.

21. A material comprising Si, C, O and H, said composition having a non-polymeric, covalently bonded ring network.

22. A material composition according to claim 21 further comprising Si—

C, Si—

H, Si—

O and C—

H bonds.

23. A material composition according to claim 21, wherein said composition further comprises between about 5 and about 40 atomic percent of Si;

between about 5 and about 45 atomic percent of C;

between 0 and about 50 atomic percent of O; and

between about 10 and about 55 atomic percent of H.

24. A material composition according to claim 21, wherein said composition having a covalently bonded three-dimensional network.

25. A material composition according to claim 21, wherein said composition being thermally stable to a temperature of at least 350°

C.

26. A film formed of the material composition according to claim 21, wherein said film having a thickness of not more than 1.3 micrometers and a crack propagation velocity in water of less than 10⁻

9 m/s.

27. A film according to claim 26, wherein said crack propagation velocity in water is less than 10⁻

10 m/s.

28. A material composition according to claim 21, wherein said Si atoms are at least partially submitted by Ge atoms.

29. A material composition according to claim 21, wherein said composition having a dielectric constant of not more than 3.6.

30. A material composition according to claim 21 further comprising at least one element selected from the group consisting of F, N, and Ge.